42results about How to "Improve carrier lifetime" patented technology

The present invention is an organic photovoltaic cell that can be manufactured by using an organic solvent having a low environmental load and high safety, such as xylene, and a manufacturing method therefor. The organic photovoltaic cell according to the present invention has a pair of electrodes and an organic thin film for photoelectric conversion provided between the electrodes, and the organic thin film is formed from an organic material which has a chemical structure of:

where R₁-R₅ are hydrogen, alkyl group, alkoxy group, or aryl group, and may include oxygen, nitrogen, silicon, phosphorus or sulfur, and wherein and m are counting numbers in the range of 1 to 10000.

A silicon carbide substrate has a silicon carbide epitaxial layer. The silicon carbide epitaxial layer has a first main surface and a second main surface opposite to the first main surface. The silicon carbide epitaxial layer has a thickness of not less than 50 μm in a direction perpendicular to the second main surface. Z_1/2 centers are in the silicon carbide epitaxial layer at a density of not more than 1×10¹² cm⁻³. A pit has a maximum depth of not more than 5 nm, the pit originating from a threading dislocation or a basal plane dislocation and having an opening at the second main surface.

The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modem RF technologies such as silicon-germanium BiCMOS processes.

A method of manufacturing a semiconductor substrate, in which a silicon layer is provided on a buried oxide film, includes preparing a base substrate having a seed layer of the silicon layer on the buried oxide film with a film thickness equal to or more than 1 nm and equal to or less than 100 nm, and epitaxially growing the seed layer at a temperature equal to or more than 1000° C. and equal to or less than 1300° C. so as to form the silicon layer with a film thickness equal to or more than 1 μm and equal to or less than 20 μm.

A system and method for producing bulk GaAs with an increased carrier lifetime of at least 10 microseconds is provided. The system and method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH₃) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous lifetime of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.

The invention discloses an N-type substrate silicon solar cell and a production method of the N-type substrate silicon solar cell. The N-type substrate silicon solar cell comprises an N-type silicon substrate and is characterized in that an N plus area layer is arranged at one side of the N-type silicon substrate; an antireflection film layer is arranged on the N plus area layer; a positive silver layer is arranged on the antireflection film layer; a P area layer is arranged at the other side of the N-type silicon substrate; and a back electrode layer is arranged on the P area layer and is a metal aluminum layer. The inventionhas the beneficial effects that compared with a P-type substrate silicon solar cell, the N-type substrate silicon solar cell has longer carrier service life, fewer complex defects, small temperature coefficient errors and thin thickness and also has the imponderable advantages in feed; through further improving the process of the N-type substrate silicon solar cell, the conversion efficiency of the solar cell can be more greatly improved, and the electrical property of the solar cell is improved to a large extent; and compared with the P-type substrate silicon solar cell, each N-type substrate silicon solar cell is improved by 0.15W on average, so that the profit on each production line can be greatly increased.

A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.

A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.

The invention relates to the technical field of semiconductor material manufacturing, and particularly discloses a method for prolonging the carrier lifetime of a silicon carbide epitaxial wafer. According to the method for prolonging the carrier lifetime of the silicon carbide epitaxial wafer, a carbon atom layer with the thickness of 100-2000 nm is deposited on the surface of the silicon carbideepitaxial wafer, and then annealing treatment is carried out. According to the method, the carrier lifetime of the silicon carbide epitaxial wafer is effectively prolonged, the operation is simple, the efficiency is high, the cost is low, and the popularization value is extremely high.

Using sol-gel techniques, an optical gain medium has been fabricated comprising a glass ceramic host material that includes clusters of crystalline oxide material, especially tin oxide, and that is doped with active ions concentrated at the clusters. The active ions are preferentially located at the nanoclusters so that they experience the relatively low phonon energy of the oxide and are insensitive to the phonon energy of the host. A host with a high phonon energy, such as silica, can therefore be used without the usual drawback of reduced carrier lifetimes through enhanced nonradiative decay rates.

The present invention provides a light source heat-dissipation structure of a backlight module having: a light-source structure, the heat-dissipation base and a carrier. The light-source structure has leads, respectively. The heat-dissipation base has a supporting surface, an attachment surface and first through holes. The carrier has second through holes, and the carrier is attached to the attachment surface of the heat-dissipation base. The light-source structure is set on the supporting surface of the heat-dissipation base, and the leads of the light-source structure pass through the first through holes and the second through holes and then electrically connect with the carrier. Hence, the heat-dissipation base may directly support and thermally contact the light-source structure for relatively enhancing the heat-dissipation efficiency of the light-source structure.

The invention provides a double-amino organic compound passivation material. The double-amino organic compound passivation material comprises an alkyl chain segment, aromatic hydrocarbon or heterocyclic compound, wherein the alkyl chain segment, aromatic hydrocarbon or heterocyclic compound comprises at least two functional groups A, and the functional groups A are amino groups. According to the double-amino organic compound passivation material provided by the invention, two amino groups in the molecule of the material can form hydrogen bonds with halogen ions in perovskite, so the crystallinity of a perovskite thin film is enhanced, the service life of a carrier is prolonged, and perovskite defects are passivated. The material has good application potential in the field of photoelectricdevices.

The invention provides a method for prolonging the minority carrier lifetime of a silicon carbide epitaxial material, and the method comprises the steps: 1, placing a SiC substrate in a reaction chamber, and carrying out the vacuum pumping; 2, introducing hydrogen into the reaction chamber, and introducing a carbon source, a silicon source and a doping source for surface treatment; 3, a carbon source, a silicon source and a doping source are introduced into the reaction chamber for growth of a buffer layer; 4, epitaxial layer growth and epitaxial layer doping are carried out; step 5, first-stage cooling: closing the silicon source and the doping source, performing hydrogen atmosphere annealing treatment, and closing the carbon source after annealing is finished; 6, second-stage cooling is conducted, specifically, hydrogen atmosphere annealing treatment is conducted; seventhly, the sixth step is repeated for multiple times till the temperature requirement is met; and 8, reducing the cavity opening temperature, opening the reaction chamber, and taking out the silicon carbide epitaxial material. The method provided by the invention is simple in process and suitable for industrial production; the service life of a carrier is prolonged to the maximum extent, and damage to the surface of the material due to long-time high-temperature annealing can be avoided.

The invention provides a method for passivating a perovskite thin film layer. The method comprises the following steps: preparing a perovskite precursor solution; pre-treating a substrate formed by conductive glass/electron transport layer; coatingthe substrate with the perovskite precursor solution and heating to generate a perovskite thin film layer; and further passivating and modifying the perovskite thin film layer by using fluorine-containing sulfonate to form the fluorine-containing sulfonate modified perovskite thin film layer. According to the method for passivating the perovskite thin film layer provided by the invention, the passivated perovskite thin film layer has excellent stability, low defect state density and long carrier lifetime, and the conversion efficiency and stability of a solar cell assembled by the perovskite thin film layer prepared by the method provided by the invention are obviously improved.