Method for prolonging carrier lifetime of silicon carbide epitaxial wafer

A technology of carrier life and epitaxial wafers, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of inability to realize conductance modulation and low carrier life, and achieve the elimination of carbon vacancy defects and high promotion Value, the effect of simple operation

Pending Publication Date: 2020-05-12
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem that the current carrier lifetime of silicon carbide epitaxial wafers is low and effective conductance modulation cannot be realized, the present invention provides a method for improving the carrier lifetime of silicon carbide epitaxial wafers

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  • Method for prolonging carrier lifetime of silicon carbide epitaxial wafer
  • Method for prolonging carrier lifetime of silicon carbide epitaxial wafer

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Embodiment 1

[0024] A method for improving the carrier lifetime of a silicon carbide epitaxial wafer, comprising the following steps:

[0025] a. Preparation of silicon carbide epitaxial wafer 1: select a 4-inch silicon carbide epitaxial wafer 1 with a silicon surface at 4° to the direction, and the impurity concentration of the epitaxial layer is 5×10 14 cm -3 , the thickness of the epitaxial layer is 100 μm, and it is used after standard RCA cleaning; the carrier lifetime of the silicon carbide epitaxial wafer 1 is measured to be 1 μs by using the μ-PCD method;

[0026] b. Deposit carbon atom layer 2 on the surface: deposit carbon atom layer 2 on the surface of silicon carbide epitaxial wafer 1 by chemical vapor deposition, the deposition growth temperature is 1300°C, the carbon growth source is methane, the methane flow rate is 100 sccm, and the carbon atoms are controlled The deposition thickness of layer 2 is 100nm;

[0027] c annealing: perform annealing treatment on the silicon c...

Embodiment 2

[0030] A method for improving the carrier lifetime of a silicon carbide epitaxial wafer, comprising the following steps:

[0031] a. Preparation of silicon carbide epitaxial wafer 1: select a 4-inch silicon carbide epitaxial wafer 1 with a silicon surface at 4° to the direction, and the impurity concentration of the epitaxial layer is 3×10 14 cm -3 , the thickness of the epitaxial layer is 90 μm, and it is used after standard RCA cleaning; the carrier lifetime of the silicon carbide epitaxial wafer 1 is measured to be 1 μs by using the μ-PCD method;

[0032] b. Deposit carbon atomic layer 2 on the surface: deposit carbon atomic layer 2 on the surface of silicon carbide epitaxial wafer 1 by chemical vapor deposition, the deposition growth temperature is 1400°C, the carbon growth source is ethane, and the ethane flow rate is 200 sccm, controlled The deposition thickness of the carbon atomic layer 2 is 2000nm;

[0033] c annealing: perform annealing treatment on the silicon ca...

Embodiment 3

[0036] A method for improving the carrier lifetime of a silicon carbide epitaxial wafer, comprising the following steps:

[0037] a. Preparation of silicon carbide epitaxial wafer 1: select a 4-inch silicon carbide epitaxial wafer 1 with a silicon surface at 4° to the direction, and the impurity concentration of the epitaxial layer is 5×10 14 cm -3 , the thickness of the epitaxial layer is 100 μm, and it is used after standard RCA cleaning; the carrier lifetime of the silicon carbide epitaxial wafer 1 is measured to be 1 μs by using the μ-PCD method;

[0038] b. Deposit carbon atom layer 2 on the surface: Deposit carbon atom layer 2 on the surface of silicon carbide epitaxial wafer 1 by chemical vapor deposition, the deposition growth temperature is 1500°C, the carbon growth source is ethylene, the ethylene flow rate is 500 sccm, and the carbon atoms are controlled The deposition thickness of layer 2 is 500nm;

[0039] c annealing: perform annealing treatment on the silicon...

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Abstract

The invention relates to the technical field of semiconductor material manufacturing, and particularly discloses a method for prolonging the carrier lifetime of a silicon carbide epitaxial wafer. According to the method for prolonging the carrier lifetime of the silicon carbide epitaxial wafer, a carbon atom layer with the thickness of 100-2000 nm is deposited on the surface of the silicon carbideepitaxial wafer, and then annealing treatment is carried out. According to the method, the carrier lifetime of the silicon carbide epitaxial wafer is effectively prolonged, the operation is simple, the efficiency is high, the cost is low, and the popularization value is extremely high.

Description

technical field [0001] The invention relates to the technical field of semiconductor material manufacturing, in particular to a method for improving the carrier lifetime of a silicon carbide epitaxial wafer. Background technique [0002] Compared with the traditional semiconductor materials represented by silicon and gallium arsenide, silicon carbide, as a wide bandgap semiconductor material, has outstanding advantages such as high thermal conductivity, high breakdown electric field, high saturation electron drift rate and high bonding energy. The performance can meet the requirements of modern electronic technology for high temperature, high frequency, high power and radiation resistance. Due to the characteristics of conductance modulation, silicon carbide bipolar devices can achieve ultra-high withstand voltage and ultra-low on-resistance. Especially suitable for power electronics applications in high voltage and ultra high voltage fields. [0003] Both the silicon carbi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02378H01L21/02527H01L21/02694
Inventor 芦伟立李佳冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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