Double-amino organic compound passivation material and application thereof

An organic compound, bisamino technology, applied in the field of bisamino organic compound passivation materials, can solve the problems of poor efficiency and stability of perovskite devices, achieve good application prospects, improve film quality, and improve the crystallization process. Effect

Active Publication Date: 2020-11-06
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the problems of a large number of defects in perovskite in the prior art and the poor performance of device efficiency and stability, and to provide a bisamino organic compound passivation material and application, based on its effect on perovskite Passivation is beneficial to improve the performance of optoelectronic devices

Method used

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  • Double-amino organic compound passivation material and application thereof
  • Double-amino organic compound passivation material and application thereof
  • Double-amino organic compound passivation material and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] When no bisamino organic compound passivation material was added, FASnI 3 The preparation method of the perovskite film is as follows:

[0041] (1) Weigh 372mg stannous iodide (SnI 2 ), 168mg formamidine hydriodide (FAI), 16mg stannous fluoride (SnF 2 ) was dissolved in a mixed polar solvent composed of 800 μL DMF and 200 μL DMSO, and stirred until the solution was uniform and clear (more than about 6 h), to obtain FASnI 3 Perovskite precursor solution.

[0042](2) Filter the prepared precursor solution with a polytetrafluoroethylene syringe filter with a pore size of 0.22 μm for later use.

[0043] (3) The filtered precursor solution was spin-coated on the ITO substrate deposited with the hole transport layer, then chlorobenzene was added dropwise, and then annealed to form a dense and non-porous perovskite film.

[0044] The spin coating process is as follows:

[0045] (31) Spin-coat 110 μL of PEDOT:PSS on the ITO substrate after UV-ozone treatment to prepare a h...

Embodiment 2

[0050] The structural formula of the bisamino organic compound passivation material is as follows:

[0051]

[0052] When the addition of bisamino organic compound passivation material is 1mol% and the structural formula of bisamino organic compound passivation material is C 6 h 18 I 2 N 2 , the bisamino organic compound 1,6 hexamethylenediamine hydroiodide (HDADI) doping concentration is the preparation method of the perovskite thin film of 1mol%, specifically as follows:

[0053] (1) Weigh 372mg stannous iodide (SnI 2 ), 168mg formamidine hydriodide (FAI), 3.7mg 1,6 hexamethylenediamine hydriodide (HDADI), 16mg stannous fluoride (SnF 2 ) was dissolved in a mixed polar solvent of 800 μL DMF and 200 μL DMSO, and stirred until the solution was uniform and clear (more than about 6 h), to obtain HDADI-doped FASnI 3 Perovskite precursor solution.

[0054] (2) Filter the prepared precursor solution with a polytetrafluoroethylene syringe filter with a pore size of 0.22 μm f...

Embodiment 3

[0062] The FASnI of bisamino organic compound passivation in embodiment 2 3 Perovskite thin films are used in inverted perovskite solar cells such as Figure 5 As shown, the structure of the inverted solar cell includes an ITO electrode, a hole transport layer, a perovskite layer, an electron transport layer, a hole blocking layer and a metal electrode. Wherein, the perovskite layer is FASnI in embodiment 1 3 FASnI doped with HDADI in embodiment 2 3 perovskite thin film.

[0063] The preparation method of the described inverted perovskite solar cell is as follows:

[0064] (1) On the ITO substrate after ultraviolet ozone treatment, the PEDOT:PSS layer was prepared by spin coating at 3000rpm for 30s, and then annealed at 120°C for 30min to obtain the PEDOT:PSS film.

[0065] (2) Spin-coat and filter spare FASnI on PEDOT:PSS membrane 3 Perovskite precursor solution, spin coating conditions: 4000rpm, 60s, and 100μL of chlorobenzene was added dropwise at 15s after the start o...

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Abstract

The invention provides a double-amino organic compound passivation material. The double-amino organic compound passivation material comprises an alkyl chain segment, aromatic hydrocarbon or heterocyclic compound, wherein the alkyl chain segment, aromatic hydrocarbon or heterocyclic compound comprises at least two functional groups A, and the functional groups A are amino groups. According to the double-amino organic compound passivation material provided by the invention, two amino groups in the molecule of the material can form hydrogen bonds with halogen ions in perovskite, so the crystallinity of a perovskite thin film is enhanced, the service life of a carrier is prolonged, and perovskite defects are passivated. The material has good application potential in the field of photoelectricdevices.

Description

technical field [0001] The invention relates to a bisamino organic compound passivation material and the application of the material passivation perovskite, belonging to the technical field of photoelectric materials and devices. Background technique [0002] Perovskite materials are a class of materials with ABX 3 The crystal structure of the general structure formula, where A generally refers to some organic cations (such as methylamine cation CH 3 NH 3 + , Formamidine cation NH=CHNH 3 + or cesium ion Cs + ), occupying the eight vertices of the cube; B refers to metal ions (such as Pb 2+ , Sn 2+ , Cu 2+ , Ge 2+ ), located at the body center of the cube; X represents the halide ion (such as I - , Br - , Cl - ), occupying the face center of the hexahedron. [0003] At present, perovskite materials have been widely used in perovskite solar cells, perovskite luminescence, photodetectors and lasers and other fields. However, perovskite films prepared based on exis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C211/12H01L51/42H01L51/44
CPCC07C211/12H10K30/88H10K30/30Y02E10/549
Inventor 陈淑芬马奔钱洁陈俊文黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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