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Passivation film, coating material, solar-cell element, and silicon substrate with passivation film attached thereto

A solar cell and passivation film technology, applied in electrical components, circuits, photovoltaic power generation, etc., can solve the problems of low cost, slow deposition speed of ALD method, and inability to obtain high production capacity, so as to achieve low cost and extended load capacity. The effect of carrier life

Inactive Publication Date: 2015-03-25
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, in general, the deposition rate of the ALD method is slow and high productivity cannot be obtained, so there is a problem that it is difficult to reduce costs

Method used

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  • Passivation film, coating material, solar-cell element, and silicon substrate with passivation film attached thereto
  • Passivation film, coating material, solar-cell element, and silicon substrate with passivation film attached thereto
  • Passivation film, coating material, solar-cell element, and silicon substrate with passivation film attached thereto

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Experimental program
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Effect test

Embodiment approach 1

[0065] The passivation film of this embodiment is a passivation film used for a silicon solar cell element, and contains aluminum oxide and niobium oxide.

[0066] By making the passivation film contain aluminum oxide and niobium oxide, the carrier lifetime of the silicon substrate can be extended, and it has negative fixed charges. Therefore, the passivation film of the present invention can improve the photoelectric conversion efficiency of a silicon solar cell element. Furthermore, since the passivation film of this invention can be formed by the coating method or the printing method, a film-forming process is simple, and the productivity of film-forming is high. As a result, pattern formation is also easy, and cost reduction can be achieved.

[0067] In addition, in the present embodiment, by changing the composition of the passivation film, it is possible to control the amount of fixed charges that the film has.

[0068] As a function of a general passivation film, ther...

Embodiment approach 2

[0078] The coating-type material of this embodiment contains an alumina precursor and a niobium oxide precursor, and this coating-type material is used for formation of the passivation film of the solar cell element which has a silicon substrate.

[0079] The alumina precursor can be used without any particular limitation as long as it can produce alumina. As the alumina precursor, it is preferable to use an organic alumina precursor from the viewpoint of uniformly dispersing alumina on the silicon substrate and from the viewpoint of chemical stability. As an example of an organic alumina precursor, aluminum triisopropoxide (structural formula: A1(OCH(CH 3 ) 2 ) 3 ), (Strain) High Purity Chemical Research Institute SYM-AL04, etc.

[0080] The niobium oxide precursor can be used without particular limitation as long as it can generate niobium oxide. As the niobium oxide precursor, an organic niobium oxide precursor is preferably used from the viewpoint of uniformly dispersi...

Embodiment approach 3

[0083] The solar cell element (photoelectric conversion device) of this embodiment has the passivation film (insulating film, protective insulating film) described in Embodiment 1 above, that is, a film containing aluminum oxide and niobium oxide, in the vicinity of the photoelectric conversion interface of the silicon substrate. . By containing alumina and niobium oxide, the carrier life of the silicon substrate can be extended, and it has negative fixed charge, so that the characteristics (photoelectric conversion efficiency) of the solar cell element can be improved.

[0084]

[0085] First, refer to Figure 2 to Figure 5 The structure of the solar cell element of this embodiment is demonstrated. Figure 2 to Figure 5 It is a sectional view which shows the 1st - 4th structural example of the solar cell element which used the passivation film on the back surface of this embodiment.

[0086] Either single crystal silicon or polycrystalline silicon can be used as the silic...

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Abstract

A passivation film for use in a solar-cell element having a silicon substrate is configured so as to contain an aluminum oxide and a niobium oxide. In addition, a solar-cell element is equipped with: a p-type silicon substrate (1) comprising monocrystalline silicon or polycrystalline silicon; an n-type impurity diffusion layer (2) formed on the light-receiving-surface side of the silicon substrate (1); a first electrode (5) formed on the surface of the diffusion layer (2); a second electrode (6) formed on the rear-surface side of the silicon substrate (1); and a passivation film (7) containing an aluminum oxide and a niobium oxide, having a plurality of open areas (OA), and formed on the rear-surface-side surface of the silicon substrate (1). Therein, the second electrode (6) is configured so as to form an electrical connection with the rear-surface-side surface of the silicon substrate (1) via the plurality of open areas (OA).

Description

technical field [0001] The invention relates to a passivation film, a coating material, a solar cell element and a silicon substrate with a passivation film. Background technique [0002] A solar cell element is a photoelectric conversion element that converts solar energy into electrical energy, and it is expected to spread further in the future as one of the pollution-free and infinitely renewable energy sources. [0003] A solar cell element generally includes a p-type semiconductor and an n-type semiconductor, and electron-hole pairs are generated inside the semiconductor by absorbing solar energy. Here, the generated electrons move to the n-type semiconductor, and the holes (holes) move to the p-type semiconductor, and these are collected at the electrode, so that electric energy can be used externally. [0004] On the other hand, in solar cell elements, it is important to improve efficiency in order to convert and output as much solar energy as possible into electrica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50H01L31/02366H01L31/0256H01L31/1868
Inventor 服部孝司松村三江子渡边敬司森下真年滨村浩孝
Owner RESONAC CORPORATION
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