Method for passivating perovskite thin film layer and perovskite solar cell

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems that do not take device stability into account, improve conversion efficiency and stability, simple and convenient method, and excellent stability Effect

Pending Publication Date: 2021-03-09
XIAMEN UNIV
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the publication number CN109873082 A provides a perovskite solar cell based on an interface modifier and its preparation method. The battery prepares a layer of perfluorosulfonic acid resin film layer on the surface of the electron transport layer as an interface modifier (equivalent to a passivation layer), which can improve the crystallinity of the perovskite absorbing layer; but in this method, the perfluorosulfonic acid resin only achieves the improvement of perovskite by optimizing the orientation growth of lead iodide after introducing the interface layer. The role of the crystallinity of the mineral thin film, but did not take into account the stability of the device, which is the key parameter to determine the performance of perovskite solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for passivating perovskite thin film layer and perovskite solar cell
  • Method for passivating perovskite thin film layer and perovskite solar cell
  • Method for passivating perovskite thin film layer and perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] According to the method provided by the present invention,

[0055] (1) PbI 2 , CsI, FAI and NMP (N-methylpyrrolidone) were dissolved in DMF (N,N-dimethylformamide) at a molar ratio of 1:0.03:0.97:1, and stirred continuously at 70°C for 1 hour, make it dissolve completely, and obtain FA with a concentration of 1.4mol / L 0.97 Cs 0.03 PB 3 Perovskite precursor solution;

[0056] (2) will be made of conductive glass / SnO 2 The substrate composed of two layers was annealed for 30 minutes under the condition of air atmosphere and 150°C, and the substrate was transferred to the glove box after the temperature dropped to room temperature;

[0057] (3) the FA 0.97 Cs 0.03 PB 3 The perovskite precursor solution was spin-coated on the above-mentioned substrate at a speed of 4000 rpm for 30 seconds, and then heated at 150°C containing FA 0.97 Cs 0.03 PB 3 Substrate the perovskite precursor solution for 20 minutes to generate black perovskite phase of FA 0.97 Cs 0.03 PB ...

Embodiment 2

[0067] (1) PbI 2 , CsI, FAI and NMP (N-methylpyrrolidone) were dissolved in DMF (N,N-dimethylformamide) at a molar ratio of 1:0.03:0.97:1, and stirred continuously at 70°C for 1 hour, make it dissolve completely, and obtain FA with a concentration of 1.4mol / L 0.97 Cs 0.03 PB 3 Perovskite precursor solution;

[0068] (2) will be made of conductive glass / dense ZnO-ZnS layer / mesoporous TiO 2 The substrate composed of two layers was annealed for 30 minutes in air atmosphere at 550°C, and the substrate was transferred to the glove box after the temperature dropped to room temperature;

[0069] (3) the FA 0.97 Cs 0.03 PB 3 The perovskite precursor solution was spin-coated on the above-mentioned substrate at a speed of 4000 rpm for 30 seconds, and then heated at 150°C containing FA 0.97 Cs 0.03 PB 3 Substrate the perovskite precursor solution for 20 minutes to generate black perovskite phase of FA 0.97 Cs 0.03 PB 3 Perovskite thin film;

[0070] (4) Pentafluoroaniline t...

Embodiment 3

[0078] (1) PbI 2 , CsI, FAI and NMP (N-methylpyrrolidone) were dissolved in DMF (N,N-dimethylformamide) at a molar ratio of 1:0.03:0.97:1, and stirred continuously at 70°C for 1 hour, make it dissolve completely, and obtain FA with a concentration of 1.4mol / L 0.97 Cs 0.03 PB 3 Perovskite precursor solution;

[0079] (2) will be made of conductive glass / SnO 2 The substrate composed of layers was annealed for 30 minutes in air atmosphere at 150°C. After the temperature dropped to room temperature, the substrate was transferred to a glove box, and the humidity was controlled at about 30%;

[0080] (3) the FA 0.97 Cs 0.03 PB 3 The perovskite precursor solution was dripped into the slit, and after scraping to form a film, the substrate was quickly vacuum flashed, and then annealed on a hot plate at 150°C for 20 minutes to form a black perovskite phase FA. 0.97 Cs 0.03 PB 3 Perovskite film, wherein the distance between the height of the scraper and the substrate is 100 μm,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for passivating a perovskite thin film layer. The method comprises the following steps: preparing a perovskite precursor solution; pre-treating a substrate formed by conductive glass/electron transport layer; coatingthe substrate with the perovskite precursor solution and heating to generate a perovskite thin film layer; and further passivating and modifying the perovskite thin film layer by using fluorine-containing sulfonate to form the fluorine-containing sulfonate modified perovskite thin film layer. According to the method for passivating the perovskite thin film layer provided by the invention, the passivated perovskite thin film layer has excellent stability, low defect state density and long carrier lifetime, and the conversion efficiency and stability of a solar cell assembled by the perovskite thin film layer prepared by the method provided by the invention are obviously improved.

Description

technical field [0001] The invention relates to a method for passivating a perovskite film layer, in particular to a passivation modified perovskite film layer containing fluorine-containing sulfonate. Background technique [0002] Organic-inorganic hybrid perovskite materials have excellent optical and electronic properties, such as high absorption coefficient, long charge carrier diffusion length and low defect density, and tunable bandgap. Solar cells based on this material have made huge strides in power conversion efficiency. In order to further obtain higher efficiency, it is common to use methods such as interface / surface modification, doping, or improving the device preparation process. For example, the publication number CN109873082 A provides a perovskite solar cell based on an interface modifier and its preparation method. The battery prepares a layer of perfluorosulfonic acid resin film layer on the surface of the electron transport layer as an interface modifie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/00H01L51/48H01L51/42
CPCH10K71/12H10K71/40H10K30/152H10K30/151H10K30/15H10K30/88Y02E10/549
Inventor 尹君聂思晴陈睿豪李静郑南峰
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap