Lateral polysilicon pin diode and method for so fabricating

a technology of polysilicon pin diodes and lateral pin diodes, which is applied in the direction of photovoltaic energy generation, electrical equipment, semiconductor devices, etc., can solve the problems of insufficient thickness of materials and a great deal of charge storage, and achieve the effect of extending the charge storage area
US20020070388A1Inactive Publication Date: 2002-06-13GLOBALFOUNDRIES INC
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Patent Information

Authority / Receiving Office
US Β· United States
Current Assignee / Owner
GLOBALFOUNDRIES INC
Publication Date
2002-06-13
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modem RF technologies such as silicon-germanium BiCMOS processes.
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Description

[0001] The present invention relates to PIN diodes and particularly a diode structure wherein the various conductive regions are laterally disposed.

[0002] Electronic switches are key for a large variety of applications, in particular, the very high volume consumer wireless 1-2 GHz market where they serve to switch the antenna in a mobile phone between receive and transmit circuits. A good switch must possess several important properties. First, the resistance should be low when the switch is on. Second, the isolation should be good when the switch is off. Finally, the switch should be able to handle a signal of sufficient strength without distorting it (i.e. without the signal itself causing the switch to turn further on or off compared to its initial state).

[0003] One type of switch has been very successful at high frequencies is the PIN diode, which consists of an intrinsic or "I" region sandwiched between P and N regions. When this diode is reverse biased (P region at a negative ...

Claims

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