Method for prolonging service life of current carrier of silicon carbide material

A carrier lifetime, silicon carbide technology, applied in chemical instruments and methods, polycrystalline material growth, single crystal growth and other directions, can solve problems such as limited effect

Inactive Publication Date: 2012-07-11
EPIWORLD INT
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  • Abstract
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  • Claims
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Problems solved by technology

However, in the actual operation process, the effect of this method is very limited

Method used

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example

[0056] In order to further illustrate the content of the present invention, an n-type silicon carbide epitaxial film grown on a substrate is taken as an example to illustrate the method of the present invention, which is specifically as follows:

[0057] Firstly, a silicon carbide sacrificial layer is grown on the n-type silicon carbide epitaxial film in a CVD reaction chamber at 1000-1800°C. When the silicon carbide sacrificial layer is grown, a carbon / silicon ratio of, for example, 10 (the ratio of the number of carbon to silicon atoms in the atmosphere above the growth surface) is used to grow a silicon carbide sacrificial layer with a thickness of, for example, 0.2 micrometers.

[0058] After finishing the growth of the sacrificial layer, turn off or reduce the flow of propane and silane, and perform annealing at a high temperature of 1000 to 1800°C. The annealing time is 0 to 5 hours, depending on the thickness of the silicon carbide epitaxial film. The annealing atmosphere (ie...

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PUM

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Abstract

The invention relates to a method for prolonging the service life of a current carrier of silicon carbide material, wherein the method comprises the steps as follows: in step (a1), a silicon carbide sacrificial layer rich in carbon or silicon interstitial atoms grows on the surface of grown silicon carbide material; and in step (b1), the structure that is obtained in the step (a1) is processed through high-temperature annealing. The invention further relates to a method for manufacturing silicon carbide crystals, wherein the service life of the current carrier of the silicon carbide crystals is prolonged; the method comprises the steps as follows: in step (a2), silicon carbide crystals grow; in step (b2), the silicon carbide sacrificial layer rich in silicon or carbon interstitial atoms grows on the surfaces of the silicon carbide crystals obtained in the step (a2); and in step (c2), the structure that is obtained in the step (b2) is processed through high-temperature annealing.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor material manufacturing, in particular to a method for improving the carrier life of silicon carbide (SiC) material and a method for manufacturing a silicon carbide crystal with improved carrier life. Background technique [0002] SiC is the third generation developed after the first generation of elemental semiconductor materials (silicon (Si) and germanium (Ge)) and the second generation of compound semiconductor materials (gallium arsenide (GaAs), indium phosphide (InP), etc.) Wide bandgap semiconductor materials, with large forbidden band width, high saturation electron drift speed, high breakdown electric field strength, high thermal conductivity, low dielectric constant and strong radiation resistance and other excellent physical and chemical properties and electrical properties, are prepared One of the ideal semiconductor materials for high temperature, high frequency, high power, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B33/02
Inventor 冯淦李哲洋赵健辉
Owner EPIWORLD INT
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