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Method for passivating perovskite and perovskite solar cell

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as unfavorable photo-generated carrier transport, reduced charge transport capacity, and affect film performance. The method is simple and convenient, Improvement of efficiency and stability, effect of low defect state density

Active Publication Date: 2019-12-31
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Prior art, such as Chinese invention patent CN108807144A, discloses the method of using crown ether to assist in the preparation of inorganic perovskite thin films, which involves crown ether doping in perovskite materials, but the crown ether in the process of preparing inorganic perovskite thin films It will remain inside the film and affect the performance of the film
However, the existence of crown ether is not conducive to the transport of photogenerated carriers, which reduces the transport capacity of charges and reduces the efficiency of the device, which is only about 8%.

Method used

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  • Method for passivating perovskite and perovskite solar cell
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  • Method for passivating perovskite and perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Example 1 - Using NMP (N-methylpyrrolidone) as a solvent or mixing agent

[0058] Preparation:

[0059] According to the method provided by the present invention, the PbI 2 , CsI and NMP were dissolved in DMF (N,N-dimethylformamide) at a molar ratio of 1:1:1, heated at 70°C and continuously stirred for 1 hour to completely dissolve to obtain CsPbI 3 Perovskite precursor solution, concentration is 1mol / L; Substrate (conductive glass / dense ZnO-ZnS layer / mesoporous TiO 2 Layer composition) in the air atmosphere, annealed at 550 ° C for 30 minutes and then lowered to room temperature, then transferred the substrate to a glove box; the CsPbI 3 The perovskite precursor solution was spin-coated on the substrate at a speed of 3000 rpm for 30 seconds, and heated at 140°C containing CsPbI 3 Substrate of perovskite precursor solution for 20 minutes to generate black perovskite phase of CsPbI 3 Perovskite thin film; the hole transport layer material spiro-OMeTAD chlorobenzene...

Embodiment 2

[0062] Example 2 - Using DMF (N,N-dimethylacetamide) as a solvent or mixing agent

[0063] Preparation:

[0064] According to the method provided by the present invention, the PbI 2 , CsI and DMF were dissolved in DMF at a molar ratio of 1:1:1, heated at 70°C and stirred continuously for 1 hour to dissolve completely, and CsPbI was obtained 3 Perovskite precursor solution, concentration is 1mol / L; Substrate (conductive glass / dense ZnO-ZnS layer / mesoporous TiO 2 Layer composition) in the air atmosphere, annealed at 550 ° C for 30 minutes and then lowered to room temperature, then transferred the substrate to a glove box; the CsPbI 3 The perovskite precursor solution was spin-coated on the substrate at a speed of 3000 rpm for 30 seconds, and heated at 140°C containing CsPbI 3 Substrate of perovskite precursor solution for 20 minutes to generate black perovskite phase of CsPbI 3 Perovskite thin film; After the chlorobenzene solution (concentration 30mg / mL), TBP and Li-TFSI ...

Embodiment 3

[0067] Example 3 - Passivation of Perovskites Using Cyclic Ether Doping

[0068] Preparation:

[0069] According to the method provided by the present invention, the PbI 2 Dissolve CsI and CsI in NMP at a molar ratio of 1:1, heat at 70°C and stir continuously for 1 hour to completely dissolve to obtain CsPbI 3 Perovskite precursor solution, the concentration is 1mol / L; the powder of 2mg 18-crown-6 is added to the CsPbI 3 In the perovskite precursor solution, ultrasonic mixing is uniform, and the doped CsPbI 3 Perovskite precursor solution; the substrate (conductive glass / dense ZnO-ZnS layer / mesoporous TiO 2 Layer composition) in the air atmosphere, 550 ° C annealed for 30 minutes and then lowered to room temperature, then transferred the substrate to a glove box; the doped CsPbI 3 The perovskite precursor solution was spin-coated on the substrate at a speed of 3000 rpm for 30 seconds, and heated at 140°C containing the doped CsPbI 3 Substrate of perovskite precursor sol...

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Abstract

The invention provides a method for passivating perovskite. The method comprises the following steps: preparing a perovskite precursor solution; carrying out annealing on a substrate, wherein the substrate comprises an electron transport layer; coating the perovskite precursor solution on the substrate and carrying out heating to generate a perovskite thin film; and forming a cyclic ether passivation layer on the perovskite thin film to obtain a perovskite thin film modified by the cyclic ether. The method for preparing the perovskite layer through the N-methyl pyrrolidone and passivating andmodifying the perovskite layer through the cyclic ether is simple in process; the solar cell assembled by the perovskite prepared through the method is high in efficiency and good in repeatability; and the stability is obviously improved.

Description

technical field [0001] The invention relates to a method for passivating perovskite, in particular to a method for passivating perovskite with cyclic ether. Background technique [0002] Organic-inorganic hybrid perovskite materials have excellent optical and electronic properties, such as high absorption coefficient, long charge carrier diffusion length and low defect density, and tunable bandgap. Devices that achieve high efficiencies are based on perovskite polycrystalline films with relatively complex compositions, ranging from binary cations (MAFA or CsFA) and ternary cations (CsMAFA) to Rb + Modified multi-cation perovskite thin films. Due to the higher thermal stability and better bandgap of FA (formamidine) compared to MA (methylamine), FA is used as the main component of the perovskite layer in the current highest efficiency cells. Notably, FAPbI 3 The pure perovskite phase is unstable at room temperature and has poor long-term stability, so Cs is often used + ,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K71/40H10K30/10H10K30/88Y02E10/549
Inventor 李静陈睿豪尹君吴炳辉郑南峰
Owner XIAMEN UNIV
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