Production method of NO2 photoelectric gas-sensitive sensor

A gas sensor, photoelectric technology, applied in the direction of material resistance, etc., can solve the problems of narrow detection concentration range and low sensitivity, and achieve the effect of easy acquisition, good stability and good light response.
CN106290482AInactive Publication Date: 2017-01-04XIAN TECHNOLOGICAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIAN TECHNOLOGICAL UNIV
Publication Date
2017-01-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the technical field of gas sensor production, in particular to a production method of a NO2 photoelectric gas-sensitive sensor. The production method includes the steps of firstly, producing a ZnO seed layer; secondly, growing a ZnO nano wall; thirdly, aging to obtain the NO2 photoelectric gas-sensitive sensor. The produced NO2 photoelectric gas-sensitive sensor has the advantages that the sensor can detect the ppb level, and the gas sensitivity of the sensor to 5ppb NO2 is 7.482; the sensor is high in sensitivity, the photo-sensitivity of the sensor to light with the wavelength being 365nm under room temperature is 6.16, and the sensitivity of the sensor to 50ppm NO2 is 57.5; the sensor is good in stability and easy in material obtaining and has the coupling property of photo-sensitivity and gas sensitivity.
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Description

technical field

[0001] The invention relates to the technical field of gas sensor preparation, in particular to a NO 2 Preparation method of photoelectric sensitive sensor. Background technique

[0002] Nitrogen dioxide is a brown-red gas with a pungent odor, which is highly corrosive and physiologically stimulating. It is one of the sources of smog and acid rain. Therefore, research on room temperature NO with high selectivity and high sensitivity 2 Gas sensor, for NO 2 Real-time and accurate detection, control and alarm of emissions have become urgent.

[0003] ZnO is an important metal oxide semiconductor material with a band gap of 3.37eV at room temperature. It is a direct band gap semiconductor with a large absorption coefficient for ultraviolet light and can fully absorb ultraviolet light; and its carrier mobility Very high, high electron mobility helps to have greater conductance and fast charge separation; at the same time, its exciton binding energy is very lar...

Claims

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