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Production method of NO2 photoelectric gas-sensitive sensor

A gas sensor, photoelectric technology, applied in the direction of material resistance, etc., can solve the problems of narrow detection concentration range and low sensitivity, and achieve the effect of easy acquisition, good stability and good light response.

Inactive Publication Date: 2017-01-04
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a kind of NO with high sensitivity at room temperature, detectable to ppb level 2 The preparation method of photoelectric sensitive sensor, to overcome NO under room temperature condition in the prior art 2 The problem of low sensitivity and narrow detection concentration range

Method used

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  • Production method of NO2 photoelectric gas-sensitive sensor
  • Production method of NO2 photoelectric gas-sensitive sensor
  • Production method of NO2 photoelectric gas-sensitive sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] a kind of NO 2 The preparation method of photoelectric sensitive sensor, comprises the steps:

[0027] 1. Preparation of seed layer

[0028] Zn(CH with a molar ratio of 1:1 3 COO) 2 2H 2 O and Al(NO 3 ) 3 .9H 2 O (Zinc acetate dihydrate, analytical grade) mixed with ethanol at room temperature to make Zn 2+The concentration is 0.2mol / L, placed in a water bath, heated and stirred at 70°C for 1 hour with a magnetic stirrer to obtain a uniform solution. The Ag interdigitated electrode was ultrasonically cleaned with acetone, ethanol solution and deionized water in sequence (both cleaning time was 30min), and after drying, it was pulled with a SYDC-100 dipping and pulling machine. The pulling speed was 6000μm / s, and the dipping time was for 30s, and then dried at 80°C for 10min; repeated pulling 4 times; heat-treated the film at 400°C for 30min to obtain a ZnO seed layer film.

[0029] 2. ZnO nanowall growth

[0030] Zn(NO 3 ) 2 6H 2 O and (CH 3 ) 6 N 4 Prep...

Embodiment 2

[0037] a kind of NO 2 The preparation method of photoelectric sensitive sensor, comprises the steps:

[0038] 1. Preparation of seed layer

[0039] Zn(CH with a molar ratio of 1:1 3 COO) 2 2H 2 O and Al(NO 3 ) 3 .9H 2 O (Zinc acetate dihydrate, analytical grade) mixed with ethanol at room temperature to make Zn 2+ The concentration is 0.2mol / L, placed in a water bath, heated and stirred at 70°C for 1 hour with a magnetic stirrer to obtain a uniform solution. The Ag interdigitated electrode was ultrasonically cleaned with acetone, ethanol solution and deionized water in sequence (both cleaning time was 30min), and after drying, it was pulled by SYDC-100 dipping and pulling machine. The pulling speed was 5500μm / s, and the dipping time was for 30s, and then dried at 80°C for 10min; repeated pulling 4 times; heat-treated the film at 400°C for 30min to obtain a ZnO seed layer film.

[0040] 2. ZnO nanowall growth

[0041] Zn(NO 3 ) 2 6H 2 O and (CH 3 ) 6 N 4 Prepare...

Embodiment 3

[0048] a kind of NO 2 The preparation method of photoelectric sensitive sensor, comprises the steps:

[0049] 1. Preparation of seed layer

[0050] Zn(CH with a molar ratio of 1:1 3 COO) 2 2H 2 O and Al(NO 3 ) 3 .9H 2 O (Zinc acetate dihydrate, analytical grade) mixed with ethanol at room temperature to make Zn 2+ The concentration is 0.2mol / L, placed in a water bath, heated and stirred at 70°C for 1 hour with a magnetic stirrer to obtain a uniform solution. The Ag interdigitated electrode was ultrasonically cleaned by acetone, ethanol solution and deionized water in sequence (the cleaning time was 30min), and after drying, it was pulled by SYDC-100 dipping and pulling machine. The pulling speed was 5000μm / s, and the dipping time was for 30s, and then dried at 80°C for 10min; repeated pulling 4 times; heat-treated the film at 400°C for 30min to obtain a ZnO seed layer film.

[0051] 2. ZnO nanowall growth

[0052] Zn(NO 3 ) 2 6H 2 O and (CH 3 ) 6 N 4 Prepare a ...

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Abstract

The invention relates to the technical field of gas sensor production, in particular to a production method of a NO2 photoelectric gas-sensitive sensor. The production method includes the steps of firstly, producing a ZnO seed layer; secondly, growing a ZnO nano wall; thirdly, aging to obtain the NO2 photoelectric gas-sensitive sensor. The produced NO2 photoelectric gas-sensitive sensor has the advantages that the sensor can detect the ppb level, and the gas sensitivity of the sensor to 5ppb NO2 is 7.482; the sensor is high in sensitivity, the photo-sensitivity of the sensor to light with the wavelength being 365nm under room temperature is 6.16, and the sensitivity of the sensor to 50ppm NO2 is 57.5; the sensor is good in stability and easy in material obtaining and has the coupling property of photo-sensitivity and gas sensitivity.

Description

technical field [0001] The invention relates to the technical field of gas sensor preparation, in particular to a NO 2 Preparation method of photoelectric sensitive sensor. Background technique [0002] Nitrogen dioxide is a brown-red gas with a pungent odor, which is highly corrosive and physiologically stimulating. It is one of the sources of smog and acid rain. Therefore, research on room temperature NO with high selectivity and high sensitivity 2 Gas sensor, for NO 2 Real-time and accurate detection, control and alarm of emissions have become urgent. [0003] ZnO is an important metal oxide semiconductor material with a band gap of 3.37eV at room temperature. It is a direct band gap semiconductor with a large absorption coefficient for ultraviolet light and can fully absorb ultraviolet light; and its carrier mobility Very high, high electron mobility helps to have greater conductance and fast charge separation; at the same time, its exciton binding energy is very lar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 于灵敏郭芬祁立军刘盛郭尤
Owner XIAN TECHNOLOGICAL UNIV
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