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Heterojunction type near-infrared photoelectric detector based on two-dimensional platinum diselenide nano film and cadmium telluride crystal, and preparation method thereof

A near-infrared optical and electrical detector technology, applied in the field of photoelectric detection, can solve the problems of low absorption of incident light, low specific detection rate, small photocurrent, etc., and achieve high specific detection rate, fast response and low cost.

Inactive Publication Date: 2019-03-08
ZHENGZHOU UNIV
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Problems solved by technology

However, the ultrathin thickness of 2D layered materials will lead to low absorption of incident light, resulting in small photocurrent, large dark current and low specific detectivity

Method used

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  • Heterojunction type near-infrared photoelectric detector based on two-dimensional platinum diselenide nano film and cadmium telluride crystal, and preparation method thereof
  • Heterojunction type near-infrared photoelectric detector based on two-dimensional platinum diselenide nano film and cadmium telluride crystal, and preparation method thereof
  • Heterojunction type near-infrared photoelectric detector based on two-dimensional platinum diselenide nano film and cadmium telluride crystal, and preparation method thereof

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Embodiment 1

[0031] see figure 1 , this embodiment is based on the heterojunction near-infrared photodetector of two-dimensional platinum diselenide nano-film and cadmium telluride crystal, which has the following structure: a two-dimensional diselenide is tiled on a part of the surface of the cadmium telluride crystal 1 platinum diselenide nano-film 2; a first metal electrode 3 in ohmic contact with the two-dimensional platinum diselenide nano-film 2 is arranged on the two-dimensional platinum diselenide nano-film 2; The cadmium crystal 1 is a second metal electrode 4 in ohmic contact, and the second metal electrode 4 is spaced apart from the two-dimensional platinum diselenide nano-film 2 (the two are not in contact);

[0032] A heterojunction is formed between the cadmium telluride crystal 1 and the two-dimensional platinum diselenide nano-film 2, and the first metal electrode 3 and the second metal electrode 4 are used as two output stages to construct a heterojunction near-infrared ph...

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Abstract

The invention discloses a heterojunction type near-infrared photoelectric detector based on a two-dimensional platinum diselenide nano film and a cadmium telluride crystal, and a preparation method thereof. The two-dimensional platinum diselenide nano film is tiled on the surface of the cadmium telluride crystal, metal electrodes in ohmic contact with the two-dimensional platinum diselenide nanofilm and the cadmium telluride crystal are respectively arranged on the two-dimensional platinum diselenide nano film and the cadmium telluride crystal, cadmium telluride and platinum diselenide forma heterojunction, and the two metal electrodes are used as two output stages, that is, constructed as the heterojunction type near-infrared photoelectric detector. The heterojunction type near-infrared photoelectric detector disclosed by the invention has a simple preparation process, achieves a wide response band, high responsivity, a high detection rate and a high response speed at the room temperature, and provides a way for the design of high-performance infrared detectors.

Description

technical field [0001] The invention relates to a heterojunction near-infrared photodetector constructed by a two-dimensional platinum diselenide nano film and a cadmium telluride crystal and a preparation method thereof, belonging to the technical field of photoelectric detection. Background technique [0002] In recent years, many researchers have devoted themselves to the development of new high-performance infrared photodetectors due to their great value in defense and military applications, industrial automation, environmental monitoring, and biomedicine. At present, most commercial infrared photodetectors are generally made of certain narrow-bandgap semiconductors such as InGaAs, HgCdTe, etc. However, the application of these photodetectors is limited by their complex fabrication process, high cost, and low-temperature operating conditions. Compared with traditional bulk semiconductor materials, two-dimensional materials are more suitable for the preparation of photod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/18B82Y15/00
CPCB82Y15/00H01L31/0336H01L31/109H01L31/1896Y02P70/50
Inventor 吴翟郭佳文王媛鸽贾诚吴恩平史志锋李新建
Owner ZHENGZHOU UNIV
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