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Application of two-dimensional palladium selenide nano film for detection of broadband polarized light signals

A palladium nano, polarized light technology, applied in the field of photoelectric detection, can solve the problems of limited application of two-dimensional materials, poor chemical stability, and inability to exist stably, and achieve the effects of significant light response, accurate detection, and fast response speed.

Pending Publication Date: 2019-06-21
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing two-dimensional materials with asymmetric structure, such as black phosphorus, silicene, germanene and other two-dimensional materials cannot exist stably in the air due to their poor chemical stability.
In addition, two-dimensional germanium disulfide and germanium diselenide are only suitable for ultraviolet light polarization detection due to their wide band gaps.
The above shortcomings severely limit the application of these two-dimensional materials in the field of broadband polarized light detection.

Method used

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  • Application of two-dimensional palladium selenide nano film for detection of broadband polarized light signals
  • Application of two-dimensional palladium selenide nano film for detection of broadband polarized light signals
  • Application of two-dimensional palladium selenide nano film for detection of broadband polarized light signals

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Embodiment 1

[0034] Such as image 3 As shown, in this embodiment, a two-dimensional palladium diselenide nanofilm grown on a silicon oxide substrate is used to directly construct a polarization-sensitive photoconductive photodetector. Specifically, a pair of metal electrodes 3 in ohmic contact with the two-dimensional palladium diselenide nano-film 2 is prepared on the two-dimensional palladium diselenide nano-film 2, and a gold electrode with a thickness of 50 nanometers is used in this embodiment. Tests have shown that if Figure 4As shown, the photodetector of this embodiment has a response sensitivity of 5.1 to polarized light at 650 nm.

Embodiment 2

[0036] Such as Figure 5 As shown, this embodiment is based on the heterojunction of two-dimensional palladium diselenide nano-film and germanium to construct a polarization-sensitive heterojunction photodetector. The specific method is: first transfer the two-dimensional palladium diselenide nano-film to On the germanium substrate: Then prepare a 100-nanometer-thick silver electrode on the surface of the two-dimensional palladium diselenide film by thermal evaporation as the first metal electrode, and prepare a 100-nanometer-thick indium-gallium alloy electrode on the surface of the germanium substrate as the second metal electrode, That is, the preparation of the polarization-sensitive heterojunction photodetector is completed. Tests have shown that if Figure 6 As shown, the photodetector of this embodiment has good photoresponse to ultraviolet, visible and infrared light. In addition, the response sensitivity of the device to polarized light at 980 nm is 7.9, such as F...

Embodiment 3

[0038] Such as Figure 8 As shown, this embodiment is based on the heterojunction of two-dimensional palladium diselenide nano film and silicon nanowire array to construct a polarization-sensitive heterojunction photodetector. The specific method is: firstly, two-dimensional palladium diselenide nano The film is transferred to the surface of the silicon nanowire array: then by thermal evaporation, gold with a thickness of 80 nm is deposited on the surface of the two-dimensional palladium diselenide film as the first metal electrode, and silver with a thickness of 100 nm is prepared on the silicon nanowire array as the first metal electrode. The second metal electrode is to complete the preparation of the polarization-sensitive heterojunction photodetector. Wherein, the silicon nanowire array is prepared by metal-assisted chemical etching. Tests have shown that if Figure 9 As shown, the response sensitivity of the photodetector of this embodiment to the polarized light of 15...

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Abstract

The invention discloses an application of a two-dimensional palladium selenide nano film for detection of broadband polarized light signals. The application is characterized in that the two-dimensional palladium selenide nano film is taken as a light sensitive layer to make a polarization-sensitive photoelectric detector, and detection of the broadband polarized light signals is realized. The application is advantaged in that the polarization-sensitive photoelectric detector made based on the two-dimensional palladium selenide nano film has significant response to the polarized light signals,and thereby accurate and stable detection of the wavelength-covered ultraviolet, visible and infrared polarized light signals in the complex electromagnetic environment can be performed.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to the application of a two-dimensional palladium diselenide nano film in the detection of broadband polarized light signals. Background technique [0002] Polarization characteristics are one of the inherent characteristics of optical signals. Although the polarization characteristics of light are used in various fields, it is still a difficult problem to obtain polarization information. This is because most optical sensors are not sensitive to the polarization characteristics of light, and the polarization characteristics of light are difficult to be measured directly, so the indirect method is usually used to obtain the polarization characteristics of light by analyzing the polarization of light waves with polarizing devices. Because the detection process is very cumbersome and the system is separated and complex, it is an inevitable trend to develop t...

Claims

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Application Information

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IPC IPC(8): G01J4/04B82Y30/00C23C14/06C23C14/14C23C14/18C23C14/24C23C14/35
Inventor 吴翟郭佳文赵智慧吴恩平贾诚史志锋李新建
Owner ZHENGZHOU UNIV
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