8 results about "Silicene" patented technology

The present invention is a silicene layer-containing silicon substrate and a method for producing the same, the silicene layer-containing silicon substrate being characterized by comprising a silicene layer on a silicon substrate and a carbon-doped silicon layer on the silicene layer. Thus, provided are: a silicene layer-containing silicon substrate in which oxidation of the silicene layer is suppressed; and a method for producing the same.

The application discloses a silicon-based solid high-density hydrogen storage material, a synthesis method and a hydrogen adsorption silicon method, wherein the synthesis method of the silicon-based solid high-density hydrogen storage material comprises the following steps: taking silicon chip cutting discarded silicon dust powder / silicon mud as a basic raw material, and obtaining silicon micro powder with nanometer size after cleaning and drying; the purity of the silicon micro powder is set to be 4.8N or more, the size is 50-200nm, and D50=80-130nm; the silicon micro powder is synthesized with calcium metal to form layered calcium silicide, specifically, the silicon micro powder is synthesized with calcium micro powder to form layered calcium silicide, then calcium ions existing between the layered calcium silicide layers are removed, and layered siliconene is obtained, and the density of the layered siliconene is 1.5g / cm 3 The silicon-based solid high-density hydrogen storage material, the synthesis method and the hydrogen adsorption silicon method provided by the application modify the basic crystal lattice structure of silicon material into a layered stacked siliconene structure, form a quasi-two-dimensional substance arranged in a honeycomb lattice plane, and have a wave mesoscopic / microscopic structure, and a large amount of hydrogen atoms can be adsorbed between the layers.

The present invention relates to: a silicene layer-containing silicon substrate having a first carbon doped silicon layer on a silicon substrate, a silicene layer on the first carbon doped silicon layer, and a second carbon doped silicon layer on the silicene layer; and a method for producing the same. Provided is a silicene layer-containing silicon substrate in which a silicene layer is formed on an insulating layer.

The invention discloses a silicon-based solid-state high-density hydrogen storage material, a synthesis method and a method for adsorbing silicon by hydrogen, and the synthesis method of the silicon-based solid-state high-density hydrogen storage material comprises the following steps: taking silicon chip powder / silicon sludge abandoned by cutting a silicon wafer as a basic raw material, cleaning and drying to obtain nano-sized silicon micro-powder; the purity of the silica powder is set to be 4.8 N or above, the size is 50-200 nm, and D50 is equal to 80-130 nm; the method comprises the following steps: synthesizing lamellar calcium silicide from silica powder and calcium metal, specifically synthesizing lamellar calcium silicide from silica powder and calcium powder, and then removing calcium ions existing between lamellar calcium silicide layers to obtain lamellar silylene with the density of 1.5 g / cm < 3 >. According to the silicon-based solid-state high-density hydrogen storage material, the synthesis method and the method for adsorbing silicon by hydrogen, a basic lattice structure of a silicon material is modified into a layered stacked silylene structure, a quasi-two-dimensional substance in honeycomb lattice plane arrangement is formed, the quasi-two-dimensional substance has a wave mesoscopic / microstructure, and a large number of hydrogen atoms can be adsorbed between layers of the quasi-two-dimensional substance.

This invention relates to a back-contact crystalline silicon solar cell for space applications and its fabrication method. The back-contact crystalline silicon solar cell comprises a p-type monocrystalline silicon substrate; the first crystalline silicon surface of the p-type monocrystalline silicon substrate is the light-facing side, and is sequentially disposed with a surface passivation layer, a first radiation-resistant layer with a silane-like structure, and a radiation-resistant hardening layer; the second crystalline silicon surface of the p-type monocrystalline silicon substrate is the back-facing side, and is sequentially disposed with a first intrinsic amorphous silicon passivation layer, a second radiation-resistant layer with a silane-like structure, a second intrinsic amorphous silicon passivation layer, a periodically spaced p-type hole collection layer and an n-type electron collection layer, a patterned transparent conductive oxide film, and a metal electrode. The back-contact crystalline silicon solar cell of this invention exhibits strong tolerance to extreme space environments, including resistance to ultraviolet radiation, high-energy electron and proton radiation, and high- and low-temperature cycling shock, and can provide low-cost, high-reliability solar cells for the energy systems of spacecraft, low-orbit communication satellites, and space stations.

The invention relates to the technical field of semiconductor materials, and discloses a silylene heating slurry coating preparation method and device, and the method comprises the steps: determining a conductive crystal growth density threshold value of silylene solid powder by using a scanning electron microscope image of the silylene solid powder; preparing silylene composite slurry of silylene solid powder; determining the combination of the optimal coating response duration and the key process parameters of the silylene composite slurry under the specific coating process; generating an initial silylene slurry coating on the surface of the high-temperature-resistant base material, and synchronously monitoring key process parameters in the generation process of the initial silylene slurry coating to obtain target crystal growth process parameters; and in combination with the target crystal growth process parameters and the optimal coating response duration, executing complete curing treatment of the silylene composite slurry on the surface of the high-temperature-resistant substrate to obtain the target silylene composite heating coating. According to the invention, uniform distribution of the conductive medium in the slurry can be ensured, and the abnormal probability of a coating heating function is greatly reduced.

The invention relates to the technical field of batteries, in particular to a preparation method of a silylene composite manganese iron lithium nickel cobalt manganese battery electrode material with low cost and good stability. The preparation method comprises the following steps: putting 20-40 parts by weight of lithium manganese iron phosphate, 30-50 parts by weight of modified nickel cobalt lithium manganate and 10-20 parts by weight of lithium manganate into a ball milling tank, adding zirconium balls with the diameter of 10-20 mm according to the ball-to-material ratio of (2-3): 1, and carrying out ball milling for 30-40 minutes at the frequency of 20-40 Hz, so as to obtain the lithium manganese iron phosphate-zirconium manganese oxide composite material, modified nickel cobalt lithium manganate is prepared with the assistance of citrate, and the structural stability and the ion diffusion capacity are improved; the modifier can form an elastic conductive skeleton, so that the volume change is effectively buffered and the agglomeration is inhibited; the prepared electrode material has the advantages of reduced cost, high capacity, excellent cycle stability, good high and low temperature performance and rate capability, good interface stability and high safety, and is suitable for large-scale production of high-performance lithium ion batteries.

The invention discloses a silylene nanosheet film preparation method, a photoelectric detector and application, and relates to the technical field of photoelectric detectors, the silylene nanosheet film preparation method comprises the following steps: S1, extracting a surface silicon atomic layer of a silicon crystal to obtain a surface silicon atomic layer film; s2, performing hydrogen plasma treatment on the surface silicon atomic layer thin film to obtain a hydrogenated silylene nanosheet thin film; and S3, carrying out thermal annealing treatment on the hydrogenated silylene nanosheet film, and converting the hydrogenated silylene nanosheet film into a silylene nanosheet film. The silylene nanosheet film provided by the invention has the technical effects of high crystal quality, excellent structural stability and good compatibility with the existing silicon-based process.