Ultraviolet detector and preparation method thereof

A detector and ultraviolet light technology, applied in the field of photoelectric detection, to achieve good light response, mild reaction conditions, and sensitive response

Inactive Publication Date: 2017-03-29
DALIAN NATIONALITIES UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There have been reports of core-shell nanostructures constructed by zinc oxide / gallium oxide, but they are all prepared by high temperature and complicated processes.

Method used

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  • Ultraviolet detector and preparation method thereof
  • Ultraviolet detector and preparation method thereof
  • Ultraviolet detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Firstly, place the 1cm×1cm quartz substrate in acetone, ethanol and deionized aqueous solution for ultrasonic cleaning and drying. Then 30 mM zinc acetate was dissolved in ethanol to prepare a seed solution. Place the quartz substrate on a spin coater, drop the prepared seed crystal solution on the surface, and spin coat after standing for 5 minutes. The time is 5 minutes. Then place the quartz substrate grown with the seed crystal on a heating platform, heat rapidly at 200° C. for 30 minutes, and then cool down to room temperature naturally. Then accurately weigh 0.4205g of zinc acetate and 0.6585g of hexamethylenetetramine with an electronic balance, dissolve them in 100ml of deionized water, and stir quickly to obtain a mixed solution. The heat-treated quartz substrate was immersed in the mixed solution, and reacted at 90° C. for 5 hours. After the reaction, the obtained quartz substrate was taken out, washed with water, and dried at 70-80°C. Subsequently, 0.014 g...

Embodiment 2

[0037] This embodiment is similar to Embodiment 1, except that the heat-treated quartz substrate is immersed in the mixed solution and reacted at 90° C. for 4 hours. At the same time, the growth time of the GaOOH precursor was changed. In this example, the reaction was carried out at 70° C. for 5 hours. After the reaction, the obtained sample was taken out, washed with water, and dried at 70-80° C. Subsequently, the growth array samples were heated to 800° C., incubated for 1 hour, and then naturally cooled to room temperature. Paste the ITO glass with 0.2cm channel on the surface of the obtained core-shell array structure and fix it.

Embodiment 3

[0039] This embodiment is similar to embodiment 1, except that the heat-treated quartz substrate in embodiment 1 is immersed in the mixed solution and reacted at 90° C. for 3 hours. At the same time, the growth time of the GaOOH precursor was changed. In this example, the reaction was carried out at 70°C for 12 hours. After the reaction, the obtained sample was taken out, washed with water, and dried at 70-80°C. Subsequently, the growth array samples were heated to 800° C., incubated for 1 hour, and then naturally cooled to room temperature. Paste the ITO glass with 0.2cm channel on the surface of the obtained core-shell array structure and fix it.

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Abstract

The invention discloses an ultraviolet detector. A gallium oxide / zinc oxide based core shell nano-rod structure layer is arranged between a quartz substrate and a transparent contact electrode of the detector, wherein the contact electrode is an ITO conductive thin film which is deposited on a glass substrate and is provided with a 0.2cm channel; the gallium oxide / zinc oxide based core shell nano-rod structure layer is composed of a ZnO nano-array seed layer and a beta-Ga2O3 layer which grows on the surface of the ZnO nano-array seed layer, the beta-Ga2O3 layer is composed of a nano beta-Ga2O3 crystal with a spherical shape, and the average size of the nano beta-Ga2O3 crystal is 30nm. The core shell nano-rod structure layer can be used for preparing a beta-Ga2O3 / ZnO core shell nano-rod structure through the steps of taking the ZnO nano-array as a carrier, adopting gallium nitrate and hexamethylenetetramine as materials, firstly growing a GaOOH precursor on the surface of ZnO by using a low-temperature water solution, and then implementing high-temperature heating. The preparation method disclosed by the invention is simple in process and low in reaction temperature; and in addition, prepared products have very good photoresponse to the ultraviolet light.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to an ultraviolet photodetector. Background technique [0002] Zinc oxide (ZnO) is an important wide-bandgap semiconductor material with good photoelectric properties. Because of its excellent optical and electrical properties, ZnO has always been the focus of people's research. Recently, one-dimensional ZnO nanostructures have attracted extensive research interest because of the high specific surface area and fast electron transport capability of ordered ZnO nanoarrays. Currently one-dimensional nanomaterials (including wires, cones, and tubes) are one of the most important components of future nanodevices. [0003] Gallium oxide (Ga 2 o 3 ) is an important semiconductor material Ga 2 o 3 Is a transparent oxide semiconductor material, in which β-Ga 2 o 3 With its unique chemical and thermal stability, it has broad application prospects in optoelectronic devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18
CPCH01L31/109H01L31/18Y02P70/50
Inventor 于乃森齐岩杨瑞董大朋董希萌赵昱程桂婧闫晗
Owner DALIAN NATIONALITIES UNIVERSITY
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