The invention discloses a preparation method of a SiC (at) CoSe2-VSe wave-absorbing material containing a large amount of Se vacancies. The preparation method comprises the following steps: loading a
cobalt precursor on the surface of a SiC
nanowire through a hydrothermal method, calcining by using a
muffle furnace to prepare a SiC-coated Co3O4 nano
composite material, converting
cobalt oxide into
cobalt selenide through a hydrothermal method, putting the product into a reductive KBH4 solution, and regulating and controlling a vacancy to obtain the SiC-coated CoSe2-VSe wave-absorbing material. CoSe2 is added, so that the material has good
impedance matching, a CoSe2
nanosheet is formed on the SiC
nanowire, a phase interface is also generated in the structure, and extra charges and dipoles are introduced into all defects and interfaces, so that the
dielectric loss is enhanced,
dipole polarization is generated by taking various defect structures as
dipole centers, and the
dielectric loss is reduced. The device plays an important role in attenuation of incident electromagnetic
waves. Due to the synergistic effect of the multiple losses, the designed SiC-coated CoSe2 nano
composite material with the vacancy has excellent
electromagnetic wave absorption performance. A good foundation is provided for development of SiC-based materials, and a good design thought is provided for preparation of electromagnetic wave absorbing materials. Various problems caused by current electromagnetic
pollution can be well solved due to the excellent performance of the
composite material, and the composite material has a wide application prospect.