Method for preparing self-supporting GaN substrate material

A substrate material, self-supporting technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, from chemically reactive gases, etc., can solve the problems of GaN-based materials and device performance degradation, and achieve the effect of reducing stress

Active Publication Date: 2018-01-19
NANJING UNIV
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Problems solved by technology

The existence of stress will cause the performance reduction of GaN-based materials and devices

Method used

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  • Method for preparing self-supporting GaN substrate material
  • Method for preparing self-supporting GaN substrate material

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Embodiment Construction

[0020] The method and process of the present invention include several parts: preparation of gallium oxide nanocolumn ordered array by hydrothermal method; gallium oxide nanocolumn array nitriding to form gallium nitride nanocolumn array; HVPE of GaN thick film on gallium nitride nanocolumn array regrowth. See the schematic diagram of the specific technical route figure 1 .

[0021] One of the technical implementations of the present invention, the preparation of the self-supporting gallium nitride substrate material includes the following steps:

[0022] 1. Cleaning and processing of the substrate (sapphire or silicon wafer).

[0023] 2. Prepare a solution with a certain concentration of Group III elements and a pH value. Such as: in this embodiment, the Ga(NO 3 ) 3 Dissolving nH2O in deionized water makes Ga 3+ The concentration is 0.01-0.05mol / L as the source of gallium, and the pH of the solution is adjusted to 6.7 by continuously adding hexamethylenetetramine powder...

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Abstract

Disclosed is a method for preparing a self-supporting GaN substrate material. A gallium oxide nanorod ordered array is grown on a substrate, such as a sapphire or a silicon wafer, through a hydrothermal method; the gallium oxide nanorod is subjected to partial or whole nitridation in ammonia gas atmosphere to form gallium nitride-coated gallium oxide, namely GaN@Ga<2>O<3> or a GaN nanorod orderedarray; GaN hydride vapor phase epitaxy (HVPE) transverse epitaxy and thick film growth are performed on the substrate comprising the GaN nanorod ordered array to obtain a low-stress and high-quality GaN thick film material; the gallium oxide on the interface layer is removed through chemical corrosion to obtain the self-supporting GaN substrate material; or based on thermal stress between galliumoxide/gallium nitride and the heterojunction substrate, such as the sapphire, the in-situ automatic separation between the nanorod and the sapphire substrate can be realized by adopting a method of controlling cooling rate so as to obtain the GaN substrate material.

Description

technical field [0001] The invention relates to a method for preparing an ordered array of gallium oxide nanocolumns by using a hydrothermal method, nitriding to form an ordered array of gallium nitride nanocolumns, and using hydride vapor phase epitaxy (HVPE) to epitaxially grow a GaN thick film on the ordered array of nanocolumns materials, methods and processes for finally obtaining self-supporting gallium nitride substrate materials. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has importan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C30B25/18C30B25/20C30B29/40
Inventor 修向前李悦文张荣华雪梅谢自力陈鹏韩平陆海施毅郑有炓
Owner NANJING UNIV
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