Method for preparing self-supporting GaN substrate material

Abstract

Disclosed is a method for preparing a self-supporting GaN substrate material. A gallium oxide nanorod ordered array is grown on a substrate, such as a sapphire or a silicon wafer, through a hydrothermal method; the gallium oxide nanorod is subjected to partial or whole nitridation in ammonia gas atmosphere to form gallium nitride-coated gallium oxide, namely GaN@Ga<2>O<3> or a GaN nanorod orderedarray; GaN hydride vapor phase epitaxy (HVPE) transverse epitaxy and thick film growth are performed on the substrate comprising the GaN nanorod ordered array to obtain a low-stress and high-quality GaN thick film material; the gallium oxide on the interface layer is removed through chemical corrosion to obtain the self-supporting GaN substrate material; or based on thermal stress between galliumoxide / gallium nitride and the heterojunction substrate, such as the sapphire, the in-situ automatic separation between the nanorod and the sapphire substrate can be realized by adopting a method of controlling cooling rate so as to obtain the GaN substrate material.

Description

technical field [0001] The invention relates to a method for preparing an ordered array of gallium oxide nanocolumns by using a hydrothermal method, nitriding to form an ordered array of gallium nitride nanocolumns, and using hydride vapor phase epitaxy (HVPE) to epitaxially grow a GaN thick film on the ordered array of nanocolumns materials, methods and processes for finally obtaining self-supporting gallium nitride substrate materials. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has importan...

AI Technical Summary

Problems solved by technology

The existence of stress will cause the performance reduction of GaN-based materials and devices

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