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Method for growing tabular gallium oxide crystals through edge-defined film-fed growth process

A technology of guided mode method and gallium oxide, which is applied in the field of growing flaky gallium oxide crystals by guided mode method, which can solve the problems of reducing crystal utilization rate and restricting the development of crystal industrialization, etc.

Inactive Publication Date: 2013-09-11
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nevertheless, using the guided mode method to grow β-Ga 2 o 3 There are still many problems in the crystal, including phenomena such as air bubbles and polycrystals are still very serious, which greatly reduces the utilization rate of the crystal and seriously restricts the production of β-Ga 2 o 3 Crystal industrialization development

Method used

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  • Method for growing tabular gallium oxide crystals through edge-defined film-fed growth process

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The method for growing flaky gallium oxide crystals by the guided mode method of the present invention comprises the following steps:

[0028] (1) Use gallium oxide powder with a purity of 99.999%, heat and dry at 500°C for 3 hours for later use.

[0029] (2) The iridium mold is used, the inner surface of the top of the mold is mechanically polished to achieve a mirror effect, the roughness is less than 0.8μm, the width of the mold slit is 0.5mm, and the iridium crucible is washed with deionized water for later use;

[0030] (3) Select β-Ga with the normal direction of the end face 2 o 3 The single crystal is used as the seed crystal, and the (100) plane is used as the main growth plane;

[0031] (4) Growth of flake β-Ga by guided mode method 2 o 3 the crystal

[0032] ① Vacuumize the furnace by 1×10 -4 Pa, slowly filled with high-purity CO 2After the gas reaches 7 bar, let it stand still for 20 minutes, and use a medium-frequency induction heating tungsten heat...

Embodiment 2

[0037] The method for growing flaky gallium oxide crystals by guided mode method comprises the following steps:

[0038] (1) Use gallium oxide powder with a purity of 99.999%, heat and dry at 800°C for 5 hours before use.

[0039] (2) The iridium mold is used, the inner surface of the top of the mold is mechanically polished to achieve a mirror effect, the roughness is less than 0.8μm, the width of the mold slit is 0.5mm, and the iridium crucible is washed with deionized water for later use;

[0040] (3) Select β-Ga with the normal direction of the end face 2 o 3 The single crystal is used as the seed crystal, and the (100) plane is used as the main growth plane;

[0041] (4) Growth of flake β-Ga by guided mode method 2 o 3 the crystal

[0042] ① Vacuumize the furnace by 1×10 -4 Pa, slowly filled with high-purity CO 2 After the gas reaches 7 bar, let it stand still for 30 minutes, and use a medium-frequency induction heating tungsten heating device to slowly heat until...

Embodiment 3

[0047] The method for growing flaky gallium oxide crystals by guided mode method comprises the following steps:

[0048] (1) Use gallium oxide powder with a purity of 99.999%, heat and dry at 700°C for 4 hours before use.

[0049] (2) Forging molds made of iridium are used, and the inner surface of the top of the mold is mechanically polished to achieve a mirror effect. The roughness is less than 0.8 μm, and the width of the mold slit is 0.5 mm. The iridium crucible is washed with deionized water for later use;

[0050] (3) Select β-Ga with the normal direction of the end face 2 o 3 The single crystal is used as the seed crystal, and the (100) plane is used as the main growth plane;

[0051] (4) Growth of flake β-Ga by guided mode method 2 o 3 the crystal

[0052] ① Vacuumize the furnace by 1×10 -4 Pa, slowly filled with high-purity CO 2 After the gas reaches 7 bar, let it stand still for 25 minutes, and use a medium-frequency induction heating tungsten heating device ...

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Abstract

The invention discloses a method for growing tabular gallium oxide crystals through an edge-defined film-fed growth process. The method comprises the following steps of: by taking high-purity gallium oxide powder as a raw material, selecting an iridium die with the top end having such a surface smoothness so that mirror face effect is achieved; by selecting beta-Ga2O3 single crystals with an end-face normal direction (010) as seed crystals and taking a (100) surface as a main growth surface, melting the material in a high-purity CO2 atmosphere for growing, increasing the temperature to the range from 10 to 20 DEG C after melting of the material is finished, keeping the temperature constant for 1-2 hours and then entering a growth stage; dividing the whole crystal growth into four parts: seeding, necking down, shouldering and isodiametric growth; employing different technical parameters at different growth stages until the whole growth process is completed, thereby obtaining tabular beta-Ga2O3 crystals. The tabular beta-Ga2O3 crystals prepared by the method provided by the invention has the characteristics of regular appearance, flat surface, no bubbles, no polycrystal and no stress fringes.

Description

technical field [0001] The invention relates to the growth of artificial crystals, in particular to a method for growing flaky gallium oxide crystals by a guided mode method. Background technique [0002] Semiconductor materials are the cornerstone of the modern semiconductor industry and microelectronics industry. In the development of semiconductor technology, Si and Ge are called the first generation semiconductor materials; III-V compound semiconductor materials, such as GaAs, InP, GaP, AlAs and their alloys are called the second generation semiconductor materials. The importance of traditional semiconductor technology can be seen from the fact that the first and second generation semiconductor materials and their related technologies created the era of computer and mobile communication. However, with the continuous development of various advanced technologies, the demand for high-performance electronic devices and optoelectronic devices that are resistant to harsh envi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/34C30B29/16
Inventor 尹继刚杭寅张连翰何明珠
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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