Solar cell structure with anti-potential induced degradation (PID) effect and production method of solar cell structure

Abstract

The invention relates to a solar cell structure with an anti-potential induced degradation (PID) effect and a production method of the solar cell structure. The solar cell comprises a base layer, a P+ layer, a silicon base body, a diffusion layer, a thermal oxidation SiOx layer, a dual-layer plasma enhanced chemical vapor deposition (PECVD) SiNx film and an Ag electrode, wherein the thermal oxidation SiOx layer is used for improving the anti-PID capacity of the solar cell; and the production method of the solar cell with the anti-PID effect comprises a pretreatment step, a high-temperature quartz tube cleaning saturation step, a high-temperature oxidation step, a growth step of the dual-layer PECVD SiNx film and a post-treatment step. The physical structure of SiOx is applied to the surface of the solar cell to form a stable film layer, so that the influenceon the solar cell caused by the outside iseffectively isolated; and the anti-PID effect is reached. The anti-PID effect can be realized without inputting of lot of money for equipment purchasing and gas path transformation; an oxidation layer grown by the method is good in compactness; and the anti-PID attenuation test result at an assembly end shows that the assembly power attenuation is kept at 0.5%-1.5% and bettter-than-expected anti-PID effects are achieved.

Description

technical field [0001] The present invention relates to the field of solar cell manufacturing, in particular to the field of photovoltaic solar cell manufacturing, in particular to a solar cell structure and production method resistant to PID effect. Background technique [0002] In recent years, the problem of power generation reduction of photovoltaic systems caused by the potential induced degradation (PID) phenomenon of components has attracted more and more people's attention. This phenomenon was first discovered by Sunpower in 2005. PID refers to the leakage current between the glass and the packaging material when the module is under high voltage for a long time, resulting in the performance of the module being lower than the design standard. In 2010, the US Renewable Energy Laboratory (NREL) and Solon Corporation found that the components prepared by using P-type crystalline silicon cells have potential PID phenomenon under negative bias. When the PID phenomenon is ...

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Problems solved by technology

[0013] Using HNO 3 The solution is subjected to wet oxygen oxidation. Since the oxide layer grown by wet chemical method is not very dense, and it is not easy to control the growth of the oxide layer, it is not easy to control in actual production.

[0014] The way of

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