Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof

A technology of solar cells and texturing liquid, applied in chemical instruments and methods, circuits, crystal growth and other directions, can solve the problems of too large pyramid size, too long texturing time, and insufficient uniformity, so as to improve short-circuit current, Good corrosion surface uniformity and improved effect

Inactive Publication Date: 2012-04-04
SHANGHAI SHENZHOU NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But there are also many problems, such as: the time for making texture is too long, the size of the pyramid is too large and not uniform, the influence of alkali metal ions, etc.

Method used

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  • Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof
  • Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof
  • Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 10g of tetramethylammonium hydroxide (TMAH), 40g of isopropanol (IPA) and 450g of deionized water were added to the texturing tank, and fully stirred to prepare a texturing solution.

[0030] Choose 50×50mm 2 , oriented p-type CZ monocrystalline silicon wafer, about 200μm thick, resistivity 2-3Ω·cm, minority carrier lifetime 1.65μs. The silicon chip whose surface has been cleaned with deionized water is put into the texturing solution for etching, the etching temperature is 80±2°C, and the etching time is 30 minutes, and finally the etched silicon chip is cleaned with deionized water. The obtained AFM images and SEM images are as follows image 3 and Figure 4 It can be seen that a pyramid structure is formed on the surface of the silicon wafer with uniform size and high coverage.

[0031] Utilize common texturizing corrosion solution (1.3wt% NaOH solution, 10wt% C 2 h 5 OH, 88.7 wt% H 2 O) silicon wafer is processed, the control processing temperature is 83 ± 2 ...

Embodiment 2

[0036] A preparation method of a texturizing solution for monocrystalline silicon solar cells, the method comprising the following steps:

[0037] Prepare materials according to the following components and contents: tetramethylammonium hydroxide 5g, isopropanol 45g, deionized water 450g, first add deionized water to the velvet tank, then add tetramethylammonium hydroxide and isopropanol , control the temperature to 80° C., and then fully stir evenly to obtain the texturing liquid for monocrystalline silicon solar cells.

[0038] Place the silicon wafer whose surface has been cleaned with deionized water in the texturing solution, control the treatment temperature to 80° C., and carry out etching treatment for 30 minutes, and then clean the etched silicon wafer with deionized water.

Embodiment 3

[0040] A preparation method of a texturizing solution for monocrystalline silicon solar cells, the method comprising the following steps:

[0041] Prepare materials according to the following components and contents: Tetramethylammonium hydroxide 10g, isopropanol 45g, deionized water 445g, first add deionized water to the velvet tank, then add tetramethylammonium hydroxide and isopropanol , control the temperature to 80° C., and then fully stir evenly to obtain the texturing liquid for monocrystalline silicon solar cells.

[0042] Place the silicon wafer whose surface has been cleaned with deionized water in the texturing solution, control the treatment temperature to 78° C., conduct corrosion treatment for 35 minutes, and then clean the etched silicon wafer with deionized water.

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Abstract

The invention relates to a texture etching solution of a monocrystaline silicon solar cell, a preparation method, and an application thereof. Raw materials of the texture etching solution comprise the following components, by weight, 1-3% of tetramethylammonium hydroxide, 7-9% of isopropyl alcohol and 88-92% of deionized water. The preparation method comprises: adding the deionized water to a texture etching groove, then adding the tetramethylammonium hydroxide and the isopropyl alcohol, controlling a temperature to 75-85 DEG C, completely and uniformly stirring to obtain the texture etching solution, which is applicable for treatment of silicon wafers. Compared to the prior art, with the present invention, the texture etching solution has a good anisotropic etching characteristic and high etching rate, the etching surface has good homogeneity, the etching solution does not contain free-alkali metal ions, has advantages of no toxicity and easy operation and control, and can provide compatibility with the microelectronic technology.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a texturizing solution for monocrystalline silicon solar cells, a preparation method and application thereof. Background technique [0002] As a new energy and renewable energy, solar cells have been widely used. Among them, the development of monocrystalline silicon cells is relatively mature, but the pursuit of higher conversion efficiency is still the goal of researchers. Using anisotropic etching solution to change Texturing the surface of silicon wafers is an effective and low-cost approach. At present, the etching solutions used in the monocrystalline silicon solar cell industry mainly include: strong alkali (NaOH, KOH), additives (isopropanol, sodium silicate, ethanol, etc.), this method uses the principle of anisotropic etching of silicon , A pyramid-like structure is formed on the surface of the monocrystalline silicon solar cell, which effectively reduces the ref...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10H01L31/18
CPCY02P70/50
Inventor 裴骏刘绍军林育琼王坤霞
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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