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Resistance-changing nerve simulation device having organic biocompatibility and preparation method and application thereof

An organic, biological and compatible technology, applied in the direction of electrical components, etc., can solve the problems of non-degradable, difficult neurobionics, poor biocompatibility, etc., achieve broad market application prospects, easy industrial production, and simple preparation methods.

Active Publication Date: 2017-12-01
HEBEI UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a resistive neurobionic device with organic biocompatibility and its preparation method and application, so as to solve the problems of neurobionic difficulties, poor biocompatibility, inability to degrade, and poor environmental performance in existing devices. Problems of high switching voltage, poor stability, and high power consumption

Method used

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  • Resistance-changing nerve simulation device having organic biocompatibility and preparation method and application thereof
  • Resistance-changing nerve simulation device having organic biocompatibility and preparation method and application thereof
  • Resistance-changing nerve simulation device having organic biocompatibility and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] like figure 1 Described, a kind of resistive neurobionic device with organic biocompatibility, its structure comprises ITO glass substrate 1 sequentially from bottom to top, the composite organic protein film 2 that grows on the ITO film of ITO glass substrate 1, and Ag electrode film 3 grown on composite organic protein film 2.

[0034] The ITO glass substrate 1 has a thickness of 0.5-3mm and a glass substrate with an ITO film, wherein the thickness of the ITO film is 50-80nm, which belongs to commercially available products.

[0035] Its composite organic protein film is a composite film of silver-doped wool keratin and silk protein, with a thickness of 5-50nm; its preparation method is: the composite organic protein solution is adhered to the ITO film of the ITO glass substrate by dipping and pulling method , placed in a vacuum desiccator and obtained by vacuum drying; in order to obtain composite organic protein films of different thicknesses, it can be achieved by...

Embodiment 2

[0051] (1) Take the wool and pre-treat it clean, put 5g of clean wool into 100mL of mixed hydrolyzate, stir and hydrolyze at 50°C for 12h, filter it with a vacuum filter, and put the filtered mother liquor in ultrapure water through a dialysis bag After dialysis for 3 days, the dialysate was concentrated at 60°C for 8 hours to obtain a wool keratin solution with a mass ratio concentration of 5%. The prepared wool keratin solution can be concentrated or diluted to a required mass ratio concentration by conventional techniques. solution, placed in an environment of 4°C for standby; the mixed hydrolyzate contains 4mol of urea, 0.1mol of Na 2 A mixed aqueous solution of S and 0.02mol of SDS (sodium dodecyl sulfate);

[0052] (2) Put 10g of cocoon in 100mL of 0.02mol / L NaHCO 3 In the solution, boil for 30 minutes, rinse with pure water to remove sericin, dissolve the degummed silk fibers in 100mL of 9.0-9.5mol / L LiBr solution at 60°C for 4 hours, and then use a dialysis tube to di...

Embodiment 3

[0065] Example 3 Detecting the voltage-current characteristics of a resistive neurobionic device with organic biocompatibility

[0066] The voltage-current of the device prepared by embodiment 2 and comparative example 1 is tested, and the results are shown in figure 2 and image 3 , the figure shows that a positive voltage is applied to the upper electrode film (i.e. Ag electrode film) of the device [ figure 2 Middle arrow (1)], when the voltage reaches a certain threshold, the current of the device suddenly increases, which means that the high resistance state suddenly changes to a low resistance state and remains in the low resistance state[ figure 2 Middle arrow (2)], until the absolute value of the negative voltage applied on the upper electrode film reaches a certain threshold, the device remains in a low-resistance state [ figure 2 Middle arrow (3)], when the absolute value of the negative voltage exceeds the threshold, the device gradually changes from a low-resi...

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Abstract

The invention discloses a resistance-changing nerve simulation device having organic biocompatibility. The resistance-changing nerve simulation device comprises an ITO glass substrate, wherein a composite organic protein film and an Ag electrode film are sequentially grown on an ITO film of the ITO glass substrate, and the composite organic protein film is composite film of silver-doped wool keratin and silk protein. The preparation method comprises the steps of a) preparing a wool keratin solution; b) preparing a silk protein solution; c) preparing the silver-doped wool keratin solution; d) preparing the composite organic protein solution; e) cleaning the substrate; f) forming the composite organic protein film; and g) growing the Ag electrode film. Moreover, the invention discloses application of the device. The device prepared by a special method shows relatively stable resistance value change, difference between a high-resistance value and a low-resistance value is relatively large, and a switch voltage is relatively concentrated; and moreover, the resistance-changing nerve simulation device has a nerve simulation function, is simple in process, is easy to operate and has a wide application prospect.

Description

technical field [0001] The invention relates to a bionic neuron synapse functional device and a preparation method thereof, in particular to a resistive neurobiological device with organic biocompatibility, a preparation method and an application thereof. Background technique [0002] With the development of economy and technology, electronic products have become an indispensable tool in people's life. At the same time, people's dependence on electronic products is also increasing day by day. expectations. [0003] As a next-generation potential logic storage and computing memory, resistive memory will soon become a strong competitor of non-volatile memory in the future due to its advantages of simple structure, excellent scalability, fast read and write speed, and low power consumption. At present, it has attracted widespread attention and active research in the microelectronics industry. People have always wanted to research products that can realize the functions of the...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/881H10N70/011
Inventor 闫小兵赵乾龙赵建辉
Owner HEBEI UNIVERSITY
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