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A resistive memory for avoiding misreading and its preparation method

A resistive variable memory and resistive variable technology, applied in the direction of electrical components, etc., can solve the problems of switching voltage dispersion, poor uniformity and stability, and high power consumption, and achieve improved uniformity, good stability and uniformity, and low power consumption Effect

Active Publication Date: 2020-01-14
上海夯业真空设备科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a resistive variable memory that avoids misreading and its preparation method, so as to solve the problems of excessive dispersion of switching voltage, poor uniformity and stability, and high power consumption in the existing resistive variable memory

Method used

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  • A resistive memory for avoiding misreading and its preparation method
  • A resistive memory for avoiding misreading and its preparation method
  • A resistive memory for avoiding misreading and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] like figure 1 As mentioned above, the resistive memory for avoiding misreading provided by the present invention has a structure including Pt / Ti / SiO from bottom to top 2 / Si substrate 1, in Pt / Ti / SiO 2 The resistive variable medium layer 2 formed on the Pt film layer of the Si substrate 1 and the Ag electrode layer 3 formed on the resistive variable medium layer 2 . The resistive variable dielectric layer 2 includes a first zirconium hafnium oxide film layer 21 , a graphene oxide quantum dot intermediate layer 22 and a second zirconium hafnium oxide film layer 23 from bottom to top.

[0033] The thickness of the resistive medium layer 2 is 10~20nm, and the thickness of the graphene oxide quantum dot intermediate layer 22 is 0.8~1.2nm, preferably 1nm; the first zirconium hafnium oxide film layer 21 and the second zirconium hafnium oxide film layer The thickness of layer 23 is preferably the same.

[0034] The thickness of the Ag electrode layer is 50-200nm.

[0035] ...

Embodiment 2

[0045] (1) Pt / Ti / SiO 2 / Si substrate 1 is placed in a beaker filled with acetone, cleaned by ultrasonic waves for 10 minutes, then placed in a beaker filled with alcohol and cleaned by ultrasonic waves for 10 minutes, then taken out with clips and placed in a beaker filled with deionized water for ultrasonic cleaning 5min, then take it out and use nitrogen (N 2 ) and blow dry.

[0046] (2) Open the cavity 4 of the magnetron sputtering equipment, take out the tablet press table 7, first polish it with sandpaper until it shines, clean the organic matter attached to the surface of the tablet press table with acetone, and finally wipe it clean with alcohol; Pt / Ti / SiO 2 / Si substrate 1 is placed on the table 7 for tableting, and the Pt / Ti / SiO is ensured during tableting 2 / Si substrate 1 is firmly pressed on the tablet press table 7 and flattened to ensure uniform film growth during sputtering. After the tablet press is completed, it is placed on the substrate table 8 in the cav...

Embodiment 3

[0056] Example 3 Testing the performance of the resistive memory devices prepared by the present invention and comparative examples

[0057] (1) 200 circles of current and voltage scans were performed on the RRAM prepared in Example 2 of the present invention and the RRAM prepared in Comparative Example 1, and the cumulative probability distribution of the on-on and off voltages was counted. The results are as follows image 3 (the present invention) and Figure 4 (Comparative Example 1), from image 3 It can be seen from the figure that the turn-on voltage of the device, that is, the set voltage, is distributed between 0.08V and 0.3V, most of which are mainly distributed between 0.15V and 0.2V; image 3 It can be seen that the shutdown voltage, that is, the reset voltage, is distributed between -0.14V~-0.01V, and most of them are mainly distributed between -0.05V~-0.1V. from Figure 4 It can be seen that the turn-on voltage of the device is distributed between 0.08V and 1....

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Abstract

The invention discloses a resistive variable memory which avoids misreading. Its structure includes a substrate, a resistive medium layer formed on the substrate, and an Ag electrode layer formed on the resistive medium layer from bottom to top; The medium layer sequentially includes a first zirconium hafnium oxide film layer, a graphene oxide quantum dot intermediate layer and a second zirconium hafnium oxide film layer from bottom to top; the preparation method of the resistive variable memory is also disclosed. The present invention prepares a resistive memory with a specific structure, especially the interlayer of graphene oxide quantum dots is embedded between the first zirconium hafnium oxide film layer and the second zirconium hafnium oxide film layer of the resistive material layer, which can be precisely Control the growth and rupture of conductive filaments to improve the uniformity of the device, so that the final resistive memory has more stable resistance changes, lower power consumption, better stability and uniformity, and the preparation method is simple, It has good operability, is easy to manufacture in a large scale, and has broad application prospects.

Description

technical field [0001] The invention relates to a memory and a preparation method thereof, in particular to a resistive variable memory which avoids misreading and a preparation method thereof. Background technique [0002] In recent years, nanoscale resistive switching Radom Access Memory (RRAM) has become one of the potential candidates for next-generation high-density memory due to its advantages of simple structure, fast access speed, low power consumption and easy integration. , and has been extensively studied. [0003] RRAM is a typical sandwich structure based on apex electrode-dielectric layer-bottom electrode. It mainly uses the reversible transition phenomenon between the high and low resistance states of the intermediate dielectric layer under the action of different electric excitations to store data. However, many problems still need to be overcome to put the RRAM into large-scale practical applications. One of the key problems is that the ON and OFF voltages...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/011H10N70/8833
Inventor 闫小兵张磊王静娟李小燕
Owner 上海夯业真空设备科技有限公司
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