Method of preparing HfON protective film for optical element
A technology for optical components and protective films, which is applied in the field of preparing HfON protective films on the surface of optical components, which can solve the problems of poor mechanical properties and general protection effects, and achieve high transmittance, high mechanical strength, and high hardness
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Embodiment 1
[0021] Embodiment 1: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:
[0022] (1) Place the KCl substrate of the optical element on the substrate stage, and firstly evacuate the vacuum chamber to a level higher than 3×10 -3 Pa, then heat the substrate to 200°C;
[0023] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.2Pa, sputter power 300W, and bombard and clean the target surface for 10 minutes;
[0024] (3) Press N 2 / (N 2 +O 2 )=0.5, (N 2 +O 2 ) / Ar=0.2 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 100W, working vacuum 0.2Pa, coat 100nm thick HfON film on both sides of the sample;
[0025] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in the above-m...
Embodiment 2
[0029] Embodiment 2: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:
[0030] (1) Place the ZnSe polished substrate of the optical element on the substrate stage, and firstly evacuate the vacuum chamber to a level higher than 3×10 -3 Pa, then heat the substrate to 500°C;
[0031] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.3Pa, sputter power 100W, and bombard and clean the target surface for 10 minutes;
[0032] (3) Press N 2 / (N 2 +O 2 )=0.6, (N 2 +O 2 ) / Ar=0.2 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 200W, working vacuum 0.2Pa, coat 800nm thick HfON film on both sides of the sample;
[0033] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in...
Embodiment 3
[0037] Embodiment 3: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:
[0038] (1) Place the Ge substrate of the optical element on the substrate stage, and first evacuate the vacuum chamber to a level higher than 3×10U -3 Pa, then heat the substrate to 400°C;
[0039] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.1Pa, sputter power 500W, and bombard and clean the target surface for 8 minutes;
[0040] (3) Press N 2 / (N 2 +O 2 )=0.2, (N 2 +O 2) / Ar=0.3 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 50W, working vacuum 0.2Pa, coat 80nm thick HfON film on both sides of the sample;
[0041] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in the above-mention...
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