Method of preparing HfON protective film for optical element

A technology for optical components and protective films, which is applied in the field of preparing HfON protective films on the surface of optical components, which can solve the problems of poor mechanical properties and general protection effects, and achieve high transmittance, high mechanical strength, and high hardness

Inactive Publication Date: 2007-10-24
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG +1
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with HfN films, its mechanical properties are poor, such as HfO 2 The hardness is only 780Hv, so the HfO 2 When used as a protective film for optical components, the protective effect is average

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of preparing HfON protective film for optical element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:

[0022] (1) Place the KCl substrate of the optical element on the substrate stage, and firstly evacuate the vacuum chamber to a level higher than 3×10 -3 Pa, then heat the substrate to 200°C;

[0023] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.2Pa, sputter power 300W, and bombard and clean the target surface for 10 minutes;

[0024] (3) Press N 2 / (N 2 +O 2 )=0.5, (N 2 +O 2 ) / Ar=0.2 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 100W, working vacuum 0.2Pa, coat 100nm thick HfON film on both sides of the sample;

[0025] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in the above-m...

Embodiment 2

[0029] Embodiment 2: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:

[0030] (1) Place the ZnSe polished substrate of the optical element on the substrate stage, and firstly evacuate the vacuum chamber to a level higher than 3×10 -3 Pa, then heat the substrate to 500°C;

[0031] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.3Pa, sputter power 100W, and bombard and clean the target surface for 10 minutes;

[0032] (3) Press N 2 / (N 2 +O 2 )=0.6, (N 2 +O 2 ) / Ar=0.2 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 200W, working vacuum 0.2Pa, coat 800nm ​​thick HfON film on both sides of the sample;

[0033] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in...

Embodiment 3

[0037] Embodiment 3: the preparation method of HfON protective film for optical element, with high-purity metal Hf as target, Ar gas as working gas, N 2 Gas and O 2 Gas is the reactive gas, and the HfON film is prepared by the reactive magnetron sputtering process. The specific steps are:

[0038] (1) Place the Ge substrate of the optical element on the substrate stage, and first evacuate the vacuum chamber to a level higher than 3×10U -3 Pa, then heat the substrate to 400°C;

[0039] (2) Fill the vacuum chamber with Ar gas, keep the vacuum at 0.1Pa, sputter power 500W, and bombard and clean the target surface for 8 minutes;

[0040] (3) Press N 2 / (N 2 +O 2 )=0.2, (N 2 +O 2) / Ar=0.3 ratio into Ar, N 2 Gas and O 2 Gas mixed gas, keep sputtering power 50W, working vacuum 0.2Pa, coat 80nm thick HfON film on both sides of the sample;

[0041] (4) After the deposition is completed, the temperature of the workpiece is slowly lowered to room temperature in the above-mention...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
microhardnessaaaaaaaaaa
hardnessaaaaaaaaaa
hardnessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a making method of HfON protective film for optical element, which is characterized by the following: adopting metal Hf target to react in the composite atmosphere of Ar, N2 and O2 through magnetic control sputtering; improving the mechanic strength, hardness, abrasion and transmission rate; fitting for anti-wet protective film and abrasion-proof film.

Description

technical field [0001] The invention belongs to the technical field of thin films, and relates to a method for preparing an HfON protective film on the surface of an optical element by adopting a reactive magnetron sputtering deposition technology. Background technique [0002] ZnSe, ZnS, Ge and other materials have low hardness, so the optical components made of these materials are easily damaged in the working environment and affect normal work, while prisms and windows made of KCl plasma crystals are easily deliquescent in the atmosphere , so it is necessary to coat the surface with a protective film to ensure normal use. [0003] An ideal optical protective film should not only have optical properties such as visible, near-infrared, mid-infrared, and far-infrared multi-band transparency and small absorption coefficient, but also have high mechanical strength, high hardness, wear resistance, good chemical stability, and Corrosion and other characteristics. DLC, Ge 1-x ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/06
Inventor 苏小平张树玉黎建明杨海王宏斌郝鹏余怀之刘伟
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap