Ultraviolet detector with gallium nitride Schottky structure and production thereof

Abstract

The invention consists of a substrate, an ohmic contact layer, an active layer, a cover layer, an ohmic electrode and two Schottky electrodes. The ohmic contact layer is made on the substrate. The active layer is made on ohmic layer, and has less area than ohmic contact layer. The cover layer is made on active layer. The ohmic electrode is made on the ohmic contact layer. The two Schottky electrodes are made on the cover layer.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a novel gallium nitride (GaN)-based Schottky ultraviolet detector structure and a manufacturing method. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, it has great application value in the field of optoelectronics and microelectronics. GaN ultraviolet detector is a very important GaN-based optoelectronic device, which has important application value in civil and military fields such as missile warning, rocket plume detection, ultraviolet communication, biochemical weapon detection, aircraft guidance, spacecraft, and fire monitoring. Compared...

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Problems solved by technology

However, due to the existence of surface states (generally speaking, the surface state density is much greater than the interface state density), the photogenerated carriers are easy to recombine on the surface of the Schottky junction, thereby reducing the quantum efficiency of the device and hindering the practical application and application of the device. Further development

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