Method for growing low-absorption phosphorus germanium zinc crystal

A technology of crystal growth and crystal growth furnace, which is applied in the growth of phosphorus-germanium-zinc crystals and the field of phosphorus-germanium-zinc crystals. It can solve problems such as troublesome, low-absorption crystal yields, etc., and reduce dislocations and intrinsic point defects. , The effect of improving crystal utilization

Inactive Publication Date: 2017-10-20
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such post-treatment measures are very cumbersome, and usually several measures need to

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  • Method for growing low-absorption phosphorus germanium zinc crystal
  • Method for growing low-absorption phosphorus germanium zinc crystal

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Embodiment 1

[0029] Cooling Growth of Phosphorus, Germanium and Zinc Crystals with Low Absorption

[0030] ① Design and manufacture a crystal growth furnace with three temperature zones with suitable gradients, which are divided into low temperature zone, gradient zone and high temperature zone, and the temperature gradient in the gradient zone is 5°C / cm;

[0031] ② Coating the surface of the corundum crucible with a carbon film layer;

[0032] ③Put the oriented phosphorus-germanium-zinc seed crystal into the crucible seed crystal groove, ZnF 2 And Ge 40g, pre-grown phosphorus germanium zinc high-purity polycrystalline raw material 100g, 20mm thick about 12g anhydrous B 2 o 3 Put them in order, and finally place the crucible in the quartz tube as a whole, and vacuumize to 10 at room temperature. -2 Pa and sealed;

[0033] ④ Put the sealed quartz tube into the crystal growth furnace, and place the end with the seed crystal, flux and polycrystalline material between the gradient zone and...

Embodiment 2

[0038] Descend Growth of Low Absorption Phosphorus, Germanium and Zinc Crystals

[0039] ① Design and manufacture a crystal growth furnace with three temperature zones with suitable gradients, which are divided into low temperature zone, gradient zone and high temperature zone, and the temperature gradient in the gradient zone is 6°C / cm;

[0040] ②Clean and dry the growing graphite crucible with deionized water, and coat the surface of the crucible with a carbon film;

[0041] ③Put the oriented phosphorus-germanium-zinc seed crystal into the crucible seed crystal groove, ZnF 2 And Ge 40g, pre-grown phosphorus germanium zinc high-purity polycrystalline raw material 100g, 30mm thick about 18g anhydrous B 2 o 3 Put them in order, and finally place the crucible in the quartz tube as a whole, and vacuumize to 10 at room temperature. -2 Pa and sealed;

[0042] ④ Put the sealed quartz tube into the crystal growth furnace, and place the end with the seed crystal, flux and polycrys...

Embodiment 3

[0047] Descend Growth of Low Absorption Phosphorus, Germanium and Zinc Crystals

[0048] ① Design and manufacture a crystal growth furnace with three temperature zones with suitable gradients, which are divided into low temperature zone, gradient zone and high temperature zone, and the temperature gradient in the gradient zone is 7°C / cm;

[0049] ②Clean and dry the grown boron nitride crucible with deionized water, and coat the surface of the crucible with a carbon film;

[0050] ③Put the oriented phosphorus-germanium-zinc seed crystal into the crucible seed crystal groove, ZnF 2 and Ge 60g, pre-grown phosphorus germanium zinc high-purity polycrystalline raw material 120g, 30mm thick about 18g anhydrous B 2 o 3 Put them in order, and finally place the crucible in the quartz tube as a whole, and vacuumize to 10 at room temperature. -2 Pa and sealed;

[0051] ④ Put the sealed quartz tube into the crystal growth furnace, and place the end with the seed crystal, flux and polyc...

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Abstract

The invention relates to a method for growing low-absorption phosphorus germanium zinc crystal. According to the invention, a temperature gradient zone melting process is adopted and is supplemented with a suitable fluxing agent, for growing under the phase transformation point temperature of the crystal. The method comprises the following steps: (1) pre-treating a growth crucible; (2) preparing raw materials; (3) increasing temperature; (4) growing the crystal; (5) cooling; (6) cleaning. The phosphorus germanium zinc mono-crystal growth according to the method provided by the invention has the characteristics of few defects, low near-infrared residue absorption, and the like. The invention can solve the problems of high growth temperature, high near-infrared residue absorption, and the like, of the present conventional growth method of the phosphorus germanium zinc crystal.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a growth method of phosphorus germanium zinc crystal. Specifically, a temperature gradient zone melting method (Temperature Gradient Solution Zone, TGSZ) is used to grow phosphorus-germanium-zinc crystals with few defects and low absorption in the near-infrared band. Background technique [0002] Zinc germanium phosphorus, chemical formula ZnGeP 2 , ZGP, its single crystal is a kind of medium and long-range infrared nonlinear crystal material with excellent performance, which has a wide light transmission band (0.74~12μm) and a large nonlinear coefficient (d 36 =75±8pm / V), high anti-laser damage threshold (2J / cm 2 , 2.05μm, 15ns, 10KHz), good machining performance (microhardness of 980kg / mm 2 ), suitable birefringence in the transparent band (0.040-0.042) and so on. [0003] Based on the above excellent properties, zinc phosphorus germanium is often used as a nonlinear medium fo...

Claims

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Application Information

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IPC IPC(8): C30B13/00C30B29/10
CPCC30B13/00C30B29/10
Inventor 倪友保吴海信肖瑞春毛明生王振友
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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