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Infrared window protective film material, use thereof and preparation method thereof

A technology of infrared window and infrared optical window, applied in the field of infrared optical thin film, can solve the problems of large film stress, harsh deposition conditions of diamond film, preparation of diamond protective film, etc., and achieve the effect of good performance and good application prospect.

Inactive Publication Date: 2010-11-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the protective film of ZnS and ZnSe windows, diamond-like film and Ge-C film have certain hardness, but the stress of this film is too large, so it is difficult to coat thicker diamond-like film on ZnS and ZnSe window , so the diamond-like film has a limited protective effect on ZnS and ZnSe windows (Waddell, Ewan M; Gibson, Desmond R; Meredith, J. Proceedings of SPIE-The International Society for Optical Engineering, v 2286, p 364-375, 1994)
The diamond film itself has extremely high hardness and is considered to be the best protective film material for the infrared window. However, the deposition conditions of the diamond film are too harsh, so it is difficult to prepare a film with sufficient area and good adhesion on the ZnS and ZnSe windows. Diamond protective film (Moller A J, ReeceD M, Hudson M D. Diamond and Related Materials, 1997, 6: 386)
PB film is the best protective film material used for ZnS and ZnSe windows so far, but the preparation of PB film requires the use of extremely toxic phosphine and borane, so the application of PB is also relatively limited (Clark, C.C.1; Haddow , D.1 Source: Proceedings of the SPIE-The International Society for Optical Engineering, v 4375, 307-14, 2001)

Method used

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  • Infrared window protective film material, use thereof and preparation method thereof
  • Infrared window protective film material, use thereof and preparation method thereof
  • Infrared window protective film material, use thereof and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0026] 1. Select the sputtering method of the physical vapor deposition method to prepare the required (Zr, Hf)Nx nitride thin film.

[0027] 2. Vacuumize the reaction chamber to below 6×10^-3Pa, turn on the substrate heater during the vacuuming process, set the temperature at 300°C, feed argon, the flow rate is 8.0sccm, and the reaction chamber pressure is 0.50~ 0.54Pa, turn on the RF power supply, adjust the substrate bias to -300V, and perform pre-sputtering for 20 minutes. During this process, the target and the target are separated by a baffle.

[0028] 3. After pre-sputtering, turn off the substrate power supply, adjust the argon gas flow rate to 2.5 sccm, open the nitrogen gas flow valve, adjust the nitrogen gas flow rate so that the N2 / Ar flow ratio is 0.72, and adjust the target power supply to set the input power to 100-300W. Remove the baffle to start deposition, the deposition pressure is 0.34-0.41Pa, and the deposition time is 60 minutes.

[0029] 4. After the de...

Embodiment 2

[0040] 1. Select the plasma-assisted chemical vapor deposition method to prepare the required (Zr, Hf)Nx nitride thin film.

[0041] 2. Vacuumize the reaction chamber to below 6×10^-3Pa, turn on the substrate heater during the vacuuming process, set its temperature to 500°C, pass in Ar to etch for 5 minutes, the Ar flow rate is 10sccm, and the reaction Chamber pressure 5000±100Pa.

[0042] 3. After etching, close the Ar flowmeter, evacuate to below 6×10^-3Pa again, feed ammonia gas and Zr tetrachloride or Hf tetrachloride, the flow rates are 25 sccm and 5 sccm respectively, and adjust the pressure of the reaction chamber to 5000Pa, turn on the RF power supply, adjust the power to 500W, and start the chemical vapor deposition of (Zr, Hf) nitride film. During the deposition process, the gas flow rate is kept constant, the reaction chamber pressure is kept between 5000±100Pa, and the deposition time is 60 minutes.

[0043] 4. After the deposition is completed, the temperature i...

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Abstract

The invention belongs to the technical field of infrared optical thin films and particularly relates to novel transitional metal Zr and Hf nitride optical thin films, use thereof and a preparation method thereof. The infrared window protective film material consists of transitional metal Zr and Hf nitrides and can be expressed as (Zr, Hf)Nx, wherein x represents the nitrogen content; and the value of the x ranges from 1.0 to 1.5. The material is particularly suitable to be used for manufacturing far-infrared band ZnS and ZnSe infrared window protective films which have high transmissivity, high hardness and low internal stress. The films can be made by various methods such as physical gas-phase deposition or chemical gas-phase deposition and have a promising prospect.

Description

technical field [0001] The invention belongs to the technical field of infrared optical thin films, and in particular relates to a novel transition metal Zr, Hf nitride optical thin film, its application and its preparation method. Background technique [0002] The types of optical materials that can be applied in the 8-12 μm far-infrared band are extremely limited, and among the limited materials, ZnS and ZnSe are the two most widely used materials. ZnS and ZnSe have good optical properties in the 8-12 μm band, but they also have significant disadvantages. Among them, the extremely low hardness makes ZnS and ZnSe easy to be scratched in the application, resulting in their optical windows. failure. [0003] So far, people have studied a variety of ZnS, ZnSe protective layer materials, including diamond-like film and Ge-C film, PB film and diamond film and so on. As the protective film of ZnS and ZnSe windows, diamond-like film and Ge-C film have certain hardness, but the s...

Claims

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Application Information

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IPC IPC(8): G02B1/10C23C14/35C23C14/06C23C16/34C23C16/455G02B1/14
Inventor 唐伟忠许恒志惠大胜
Owner UNIV OF SCI & TECH BEIJING
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