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Method for preparing long-wave infrared antireflective protective film

A long-wave infrared, protective film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of poor adhesion between the anti-reflection protective film and the substrate, low hardness of the anti-reflection protective film, and decreased optical properties of the film and other problems, to achieve the effect of improving sand and rain erosion resistance, infrared transmittance and hardness.

Active Publication Date: 2018-06-12
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problem of serious performance degradation of the anti-reflection protective film of the window material of the existing infrared detection system or during the service process, resulting in a decrease in the optical performance of the film, or the existence of poor adhesion between the anti-reflection protective film and the substrate, and a transition layer needs to be deposited. The complexity of the process is increased, or there is a problem of low hardness of the anti-reflection protective film, and a preparation method of the long-wave infrared anti-reflection protective film is provided

Method used

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  • Method for preparing long-wave infrared antireflective protective film

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specific Embodiment approach 1

[0021] Embodiment 1: The preparation method of a long-wave infrared antireflection protective film described in this embodiment is completed according to the following steps:

[0022] 1. Cleaning of targets and windows:

[0023] Under the condition of ultrasonic power of 100W-300W, put the metal Gd target in acetone, alcohol and deionized water for 10min-20min respectively, and then use nitrogen to blow off the dust attached to the surface to obtain a clean target; Under the condition of 100W ~ 300W, put the ZnS infrared window material in acetone, alcohol and deionized water for 10min ~ 20min, respectively, and then blow off the dust attached to the surface with nitrogen to obtain the substrate material;

[0024] 2. Preparatory work before coating:

[0025] First install the clean target on the magnetron sputtering target position, place the substrate material at the center of the heating table in the high-vacuum magnetron sputtering coating system, and then start the vacuum...

specific Embodiment approach 2

[0035]Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, under the condition of ultrasonic power of 200W-300W, the metal Gd target is placed in acetone, alcohol and deionized water for 15min to 15min respectively. 20min, and then use nitrogen to blow off the dust attached to the surface to obtain a clean target. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0036] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in Step 1, the ZnS infrared window material is placed in acetone, alcohol, and deionized water in sequence under the condition of ultrasonic power of 200W to 300W. Wash for 15 min to 20 min respectively, and then blow off the dust attached to the surface with nitrogen to obtain the substrate material. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for preparing a long-wave infrared antireflective protective film, and relates to a method for preparing for an antireflective protective film. The problems to be solved are that an existing infrared detection system window material antireflective protective film has the serious performance degradation during the service process, so that the optical properties of athin film are decreased; or due to the poor adhesion between the antireflective protective film and a substrate, a transition layer need deposit, and the complexity of technology is increased; and orthe hardness of the antireflective protective film is lower. The method includes the steps of firstly, cleaning of a target and a window; secondly, preparatory work before coating; thirdly, preparation of Gd2O3 thin films by a reactive sputtering mode; fourthly, finish and shutdown; and fifthly, double-sided coating. The method for preparing the long-wave infrared antireflective protective film isfinished. The method is used for preparing the long-wave infrared antireflective protective film.

Description

technical field [0001] The invention relates to a preparation method of an antireflection protective film. Background technique [0002] When the infrared detection system detects infrared signals, due to the low transmittance of the substrate material (less than 70%), especially in the long-wave infrared band (8 μm to 12 μm), the detected signal is weak and the imaging effect is poor, which directly affects the signal quality. Accuracy of collection and subsequent execution. In order to improve the transmittance in the infrared band, it is necessary to coat the surface with an anti-reflection coating to increase the transmittance. In addition, as the window material of the detector, it also needs to have a certain hardness to protect the softer base material. At present, the commonly used infrared window substrate material is ZnS, and the main film systems for its anti-reflection protection include DLC film, carbide, oxide, phosphide, nitride, and fluoride. Among them, D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/0036C23C14/08C23C14/35
Inventor 朱嘉琦杨振怀杨磊代兵高岗王鹏郭帅耿芳娟
Owner HARBIN INST OF TECH
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