Spectral selective radiation infrared stealth material and preparation method thereof

Abstract

The invention discloses a spectral selective radiation infrared stealth material which sequentially comprises a substrate, an aluminum nitride layer and a dielectric layer, the dielectric layer is composed of a plurality of dielectric layers A and dielectric layers B which are arranged alternately; the dielectric layer A is made of any one of germanium, tellurium and silicon, and the dielectric layer B is made of any one of zinc sulfide, zinc selenide, magnesium fluoride, barium fluoride and calcium fluoride. The preparation method of the material comprises the following steps: (1) cleaning and drying the substrate; (2) preparing an aluminum nitride layer on the surface of the substrate by adopting a magnetron sputtering or tape casting method; and (3) adopting magnetron sputtering or electron beam evaporation, depositing a dielectric layer A on the aluminum nitride layer firstly, then depositing a dielectric layer B on the aluminum nitride layer, depositing the dielectric layer A andthe dielectric layer B repeatedly and alternately until the designed number of layers is reached, and completing preparation of the infrared stealth material. The spectral selective radiation infraredstealth material disclosed by the invention considers the requirements of low emissivity and radiation heat dissipation, and has important significance for better realizing infrared stealth.

Description

technical field [0001] The invention belongs to the field of new materials, in particular to a spectral selective radiation infrared stealth material and a preparation method thereof. Background technique [0002] With the rapid development of photoelectric technology, various reconnaissance techniques have emerged as the times require. Stealth technology plays an increasingly important role in modern warfare. In various stealth technologies, infrared stealth occupies a very important position. Infrared stealth refers to eliminating or reducing the difference in the radiation characteristics of the two atmospheric windows (3.0μm~5.0μm, 8.0μm~14.0μm) in the middle and far infrared bands between the target and the background. [0003] At present, the use of low-emissivity infrared stealth materials is still the most important way of infrared stealth. Traditional infrared low-emissivity materials have low emissivity in the entire infrared band, covering the 3.0 μm to 5.0 μm ...

AI Technical Summary

Problems solved by technology

However, the application of selective radiation materials in the field of infrared stealth is still immature

Chinese patent CN104865617A discloses an infrared stealth film with spectral selectivity and low emissivity and its preparation method. The infrared stealth film is composed of high refractive index material germanium and low refractive index material magnesium fluoride, but the material structure and The process is relatively complicated, the number of film layers is large and the film is thick, the internal stress of the material increases, and the structure of the material is easily damaged in a high temperature environment

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