Preparation method of zinc selenide polycrystalline material for single crystal growth
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- NORTHWESTERN POLYTECHNICAL UNIV
- Publication Date
- 2010-03-10
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
1. Technical field
[0001] The invention belongs to the field of photoelectric materials, in particular to a method for preparing a zinc selenide polycrystalline material used for single crystal growth. 2. Background technology
[0002] Zinc selenide (ZnSe) crystal is a II-VI wide bandgap compound semiconductor material. Due to its excellent physical and chemical properties, it is widely used in blue light semiconductor light-emitting devices, nonlinear optoelectronic devices, nuclear radiation detection devices and near-ultraviolet-visible light detection devices. Devices have important application prospects. Since the growth of zinc selenide single crystal is very sensitive to impurities, the commonly used preparation methods of zinc selenide single crystal include melt method, high temperature solution method, solid phase recrystallization method and vapor phase growth method, all of which require a purity of up to 99.999%. The above zinc selenide polycrystalline raw mate...