Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal

A cadmium selenide and crucible technology, which is applied in the field of infrared and nonlinear optical crystal preparation, can solve the problems of polycrystalline material volatilization, furnace pollution, CdSe melt leakage, etc., achieve excellent pressure resistance, avoid melt leakage, and conduct heat sexually superior effect

Inactive Publication Date: 2014-11-19
北京雷生强式科技有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The graphite crucible used in the prior art is prone to cracking under high pressure, resulting in leakage of CdSe melt, and even volatilization of polycrystalline materials into the hearth of the crystal growth furnace, causing pollution of the hearth

Method used

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  • Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal
  • Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal
  • Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal

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Embodiment 1

[0136] This embodiment provides a first type of crucible 1 for growing cadmium selenide crystals, with figure 1 Schematic diagram of the structure of the crucible. as attached figure 1 As shown, the first type of crucible 1 includes: a first inner crucible 11 made of pyrolytic boron nitride, a first outer crucible 12 of molybdenum material set outside the first inner crucible 11, and a first outer crucible for sealing The first crucible cover 13 of the first outer crucible 12, a gap with a width of 1.2mm is provided between the first outer crucible 12 and the first inner crucible 11;

[0137] The first inner layer crucible 11 includes a tapered tip portion 111 with a cone angle of 60° and a first column portion 112 for cadmium selenide crystal growth, the first column portion 112 is a hollow cylinder with an inner diameter of 100mm , with an equal-diameter length of 400mm, set on the tapered tip portion 111;

[0138] The wall thickness of the first outer layer crucible 12 i...

Embodiment 2

[0140] This embodiment also provides a first type of crucible 1 for growing cadmium selenide crystals, except that the first type of crucible 1 provided by this embodiment and the first type of crucible 1 provided by embodiment 1 have the following distinguishing features: The rest of the structures are the same, so the structure of the crucible provided in this embodiment can also refer to the attached figure 1 .

[0141] Among them, these distinguishing features are: the material of the first inner layer crucible 11 is graphite; the cone angle of the tapered tip portion 111 of the first inner layer crucible 11 is 5°; The inner diameter of the part 112 is 10mm, and the equal diameter length is 50mm; the material of the first outer layer crucible 12 is an alloy of molybdenum and tungsten; the wall thickness of the first outer layer crucible 12 is 3mm; and the first outer layer crucible 12 and the first The gap between the inner crucibles 11 is 2 mm.

Embodiment 3

[0143] This embodiment also provides a first type of crucible 1 for growing cadmium selenide crystals, except that the first type of crucible 1 provided by this embodiment and the first type of crucible 1 provided by embodiment 1 have the following distinguishing features: The rest of the structures are the same, so the structure of the crucible provided in this embodiment can also refer to the attached figure 1 .

[0144] Among them, these distinguishing features are: the cone angle of the tapered tip portion 111 of the first inner layer crucible 11 is 160°; the inner diameter of the first cylinder portion 112 of the first inner layer crucible 11 is 300mm, and the equal diameter length is 600 mm; the material of the first outer crucible 12 is iridium; the wall thickness of the first outer crucible 12 is 10 mm; and the gap between the first outer crucible 12 and the first inner crucible 11 is 0.5 mm.

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Abstract

The invention discloses a crucible for growing a cadmium selenide crystal and a growing method of the cadmium selenide crystal. The crucible comprises an inner-layer crucible, an outer-layer crucible and a crucible cover, wherein the outer-layer crucible is sheathed outside the inner-layer crucible, the crucible cover is used for covering the outer-layer crucible, and a clearance is left between the outer-layer crucible and the inner-layer crucible; the inner-layer crucible comprises a tapered tip part and a first column body part for growing the cadmium selenide crystal, and the first column body part is arranged above the tapered tip part; the internal contour of the outer-layer crucible is matched with the external contour of the inner-layer crucible, and the external contour of the outer-layer crucible is columnar; the inner-layer crucible is made of graphite or pyrolytic boron nitride, and the outer-layer crucible is made of at least one of molybdenum, tungsten, iridium and platinum, and alloys thereof. The crucible can buffer pressure from the inner-layer crucible, so as to prevent the inner-layer crucible from having cracking and melt leakage phenomena; the crucible can guarantee that the inner-layer crucible and the outer-layer crucible cannot be cracked due to thermal expansion.

Description

technical field [0001] The invention relates to the field of infrared and nonlinear optical crystal preparation, in particular to a crucible for growing cadmium selenide crystals and a growth method for cadmium selenide crystals. Background technique [0002] Cadmium selenide (CdSe) crystal is a nonlinear optical material with excellent performance in the mid- and far-infrared bands. Its light transmission range is 0.75-25 μm and its nonlinear coefficient is d 31 =18pm / V, thermal conductivity 0.04W / cm·k, laser damage threshold 60MW / cm 2 , can be used as a nonlinear optical medium material for lasers such as optical parametric oscillation, optical parametric amplification, frequency mixing and second harmonic, and can realize frequency conversion, full-solid-state laser and multi-wavelength tunable output. Especially CdSe crystals have an absorption coefficient (α 2.5-15μm ≤0.01cm -1 ) is low, the phase-matching band is wide, and it can absorb no phonon oscillation in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/48
Inventor 夏士兴张月娟李兴旺王永国莫小刚
Owner 北京雷生强式科技有限责任公司
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