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N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof

A sapphire substrate, yellow light technology, applied in the field of microelectronics, can solve the problems of complex quantum well growth process, degraded GaN crystal quality, affecting device performance, etc., to improve growth efficiency, avoid large lattice mismatch of materials, and simplify The effect of the process steps

Active Publication Date: 2015-11-25
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this scheme, the quantum well growth process is complicated, the growth efficiency is low, and the production cost is high, and the InGaN / GaN interface will generate large stress due to lattice mismatch, resulting in the degradation of the crystal quality of GaN, which will affect the device. performance

Method used

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  • N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof
  • N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1, making the C doping concentration is 1×10 18 cm -3 , Si doping concentration is 2×10 18 cm -3 The n-type N-face GaN active layer LED material.

[0027] Step 1, performing heat treatment on the substrate substrate.

[0028] Place the c-plane sapphire substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and pass the mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the conditions that the substrate heating temperature is 1050° C., the time is 8 minutes, and the pressure of the reaction chamber is 35 Torr, heat treatment is performed on the substrate.

[0029] Step 2, growing an AlN nucleation layer.

[0030] Lower the temperature of the heat-treated substrate to 580°C, feed the aluminum source with a flow rate of 4 μmol / min, hydrogen gas with a flow rate of 1200 sccm and ammonia gas with a flow rate of 5000 sccm, and grow the thickness u...

Embodiment 2

[0037] Embodiment 2, making C doping concentration is 1×10 17 cm -3 , Si doping concentration is 5×10 17 cm -3 The n-type N-face GaN active layer LED material.

[0038] The implementation steps of this example are as follows:

[0039] In step A, the c-plane sapphire substrate is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2Torr, under the condition that the substrate heating temperature is 850° C., the time is 5 minutes, and the reaction chamber pressure is 20 Torr, heat treatment is performed on the substrate.

[0040] Step B, lowering the temperature of the heat-treated substrate to 480°C, feeding an aluminum source with a flow rate of 3 μmol / min, hydrogen gas with a flow rate of 1000 sccm and ammonia gas with a flow rate of 8000 sccm into the reaction chamber, under the condition of maintaining ...

Embodiment 3

[0044] Embodiment 3, making the C doping concentration is 4×10 19 cm -3 , Si doping concentration is 5×10 19 cm -3 The n-type N-face GaN active layer LED material.

[0045] The implementation steps of this example are as follows:

[0046] Step 1: performing heat treatment on the base substrate.

[0047] The c-plane sapphire substrate is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber for heat treatment. The process conditions of heat treatment are as follows:

[0048] The vacuum degree of the reaction chamber: less than 2×10 -2 Torr;

[0049] Substrate heating temperature: 1170°C;

[0050] Nitriding time: 30min;

[0051] Reaction chamber pressure: 750 Torr.

[0052] Step 2, growing an AlN nucleation layer.

[0053] A low-temperature AlN nucleation layer with a thickness of 200 nm is grown on the heat-treated substrate. The process conditions are as follows: ...

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Abstract

The invention discloses an N surface yellow-light LED material based on a c-surface sapphire substrate and a manufacturing method thereof. The method comprises the following growing steps:1) carrying out thermal treatment on the c-surface sapphire substrate; 2) growing a low-temperature nucleating layer, the thickness of which is 10-200 nm, on the substrate obtained after thermal treatment; 3) growing a high-temperature n-type GaN active layer, of which the thickness is 0.2-100 mum, the Si doping concentration is 5*10<17>cm<-3>-5*10<19>cm<-3>, and the C doping concentration is 1*10<17>cm<-3>-4*10<19>cm<-3>, on the nucleating layer; 4) growing an AlGaN barrier layer, the thickness of which is 5-200 nm, on the active layer; and 5) growing a high-temperature p-type GaN layer, of which the thickness is 0.01-10 mum, and the Mg doping concentration is 1*10<17>cm<-3>-5*10<19>cm<-3>. The N surface yellow-light LED material based on the c-surface sapphire substrate and the manufacturing method thereof are simple in process and low in cost, and can be used for preparing an N surface GaN yellow-light light-emitting diode.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor material, which can be used for making GaN yellow LED products. technical background [0002] Gallium nitride has the advantages of direct band gap, high thermal conductivity, high electron saturation mobility, high luminous efficiency, high temperature resistance and radiation resistance. It is used in short-wavelength blue-ultraviolet light-emitting devices, microwave devices and high-power semiconductor devices. There are huge application prospects. Theoretically, by adjusting the composition of In in GaN, full coverage of visible light wavelengths can be achieved. [0003] In 2007, S.Keller et al. proposed a plan to grow an N-face InGaN / GaN quantum well structure on a sapphire substrate by using the MOCVD method. In this scheme, the quantum well growth process is complicated, the growth efficiency is low, and the production cost is high, and the InGaN / ...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/00
CPCH01L33/007H01L33/325
Inventor 许晟瑞郝跃任泽阳张进成李培咸姜腾蒋仁渊牛牧童
Owner XIDIAN UNIV
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