N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof

A sapphire substrate, yellow light technology, applied in the field of microelectronics, can solve the problems of complex quantum well growth process, degraded GaN crystal quality, affecting device performance, etc., to improve growth efficiency, avoid large lattice mismatch of materials, and simplify The effect of the process steps

Active Publication Date: 2015-11-25
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this scheme, the quantum well growth process is complicated, the growth efficiency is low, and the production cost is high, and the InGaN/GaN interface

Method used

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  • N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof
  • N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0026] Example 1, the production of C doping concentration is 1×10 18 cm -3 , Si doping concentration is 2×10 18 cm -3 N-type n-plane GaN active layer of LED material.

[0027] Step 1. Heat the substrate substrate.

[0028] The c-plane sapphire substrate is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber. The vacuum degree in the reaction chamber is less than 2×10 -2 Torr, the substrate heating temperature is 1050 DEG C, the time is 8 min, and the reaction chamber pressure is 35 Torr, and the substrate substrate is heat-treated.

[0029] Step 2, growing an AlN nucleation layer.

[0030] The temperature of the heat-treated substrate is reduced to 580℃, and an aluminum source with a flow rate of 4μmol / min, hydrogen with a flow rate of 1200sccm and ammonia gas with a flow rate of 5000sccm are introduced into the reaction chamber. The thickness is grown under the conditions of mainta...

Example Embodiment

[0037] Example 2, the production of C doping concentration is 1×10 17 cm -3 , Si doping concentration is 5×10 17 cm -3 N-type n-plane GaN active layer of LED material.

[0038] The implementation steps of this example are as follows:

[0039] Step A, place the c-plane sapphire substrate in a metal organic chemical vapor deposition MOCVD reaction chamber, and pass a mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, the substrate heating temperature is 850° C., the time is 5 min, and the reaction chamber pressure is 20 Torr, and the substrate substrate is heat-treated.

[0040] Step B: The temperature of the heat-treated substrate is reduced to 480°C, and an aluminum source with a flow rate of 3 μmol / min, a hydrogen gas with a flow rate of 1000 sccm and an ammonia gas with a flow rate of 8000 sccm are introduced into the reaction chamber, and the pressure is maintained at 20 Torr. A low-temperature AlN ...

Example Embodiment

[0044] Example 3, the production of C doping concentration is 4×10 19 cm -3 , Si doping concentration is 5×10 19 cm -3 N-type n-plane GaN active layer LED material.

[0045] The implementation steps of this example are as follows:

[0046] Step one is to heat the substrate substrate.

[0047] The c-plane sapphire substrate is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber for heat treatment. The process conditions of heat treatment are as follows:

[0048] Vacuum degree of the reaction chamber: less than 2×10 -2 Torr;

[0049] Substrate heating temperature: 1170℃;

[0050] Nitriding time: 30min;

[0051] Reaction chamber pressure: 750 Torr.

[0052] Step two, grow an AlN nucleation layer.

[0053] A low-temperature AlN nucleation layer with a thickness of 200 nm is grown on the heat-treated substrate. The process conditions are as follows:

[0054] Reaction chamber temperature: 680℃...

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Abstract

The invention discloses an N surface yellow-light LED material based on a c-surface sapphire substrate and a manufacturing method thereof. The method comprises the following growing steps:1) carrying out thermal treatment on the c-surface sapphire substrate; 2) growing a low-temperature nucleating layer, the thickness of which is 10-200 nm, on the substrate obtained after thermal treatment; 3) growing a high-temperature n-type GaN active layer, of which the thickness is 0.2-100 mum, the Si doping concentration is 5*10<17>cm<-3>-5*10<19>cm<-3>, and the C doping concentration is 1*10<17>cm<-3>-4*10<19>cm<-3>, on the nucleating layer; 4) growing an AlGaN barrier layer, the thickness of which is 5-200 nm, on the active layer; and 5) growing a high-temperature p-type GaN layer, of which the thickness is 0.01-10 mum, and the Mg doping concentration is 1*10<17>cm<-3>-5*10<19>cm<-3>. The N surface yellow-light LED material based on the c-surface sapphire substrate and the manufacturing method thereof are simple in process and low in cost, and can be used for preparing an N surface GaN yellow-light light-emitting diode.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor material, which can be used for making GaN yellow LED products. technical background [0002] Gallium nitride has the advantages of direct band gap, high thermal conductivity, high electron saturation mobility, high luminous efficiency, high temperature resistance and radiation resistance. It is used in short-wavelength blue-ultraviolet light-emitting devices, microwave devices and high-power semiconductor devices. There are huge application prospects. Theoretically, by adjusting the composition of In in GaN, full coverage of visible light wavelengths can be achieved. [0003] In 2007, S.Keller et al. proposed a plan to grow an N-face InGaN / GaN quantum well structure on a sapphire substrate by using the MOCVD method. In this scheme, the quantum well growth process is complicated, the growth efficiency is low, and the production cost is high, and the InGaN / ...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/00
CPCH01L33/007H01L33/325
Inventor 许晟瑞郝跃任泽阳张进成李培咸姜腾蒋仁渊牛牧童
Owner XIDIAN UNIV
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