Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals

A vertical temperature gradient, high temperature oxide technology, applied in chemical instruments and methods, the use of seed crystals to remain in the melt during growth, single crystal growth and other directions to overcome water temperature changes, achieve real-time control, and reduce dislocations.

Inactive Publication Date: 2011-05-11
FUJIAN XINJING PRECISION CORUNDUM TECH CO LTD
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  • Abstract
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for growing large-sized high-temperature oxide crystals by the vertical temperature gradient Kyropoulos method that can solve the quality problems and quality stability problems of the industrialized mass production of high-temperature oxide crystals

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  • Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals
  • Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals
  • Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals

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Embodiment Construction

[0015] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0016] Such as figure 1 As shown, the first embodiment, a method for growing large-sized high-temperature oxide crystals by the vertical temperature gradient Kyropoulos method, includes a pulling structure 1, and the pulling structure 1 is connected with the furnace cover 2 and the furnace 3, wherein the furnace 3 Install the flange seat 4, the metal heating element 5, the heat preservation cover 6 and the crucible 7, the metal heating element 5 is placed on the flange seat 4, the flange seat 4 is fixed with the ring-shaped combination insulation layer 8, and the crucible 7 is installed with a crucible holder 9 and the crucible support rod 10 are used to support the crucible 4, the crucible support rod 10 passes through the lower insulation...

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Abstract

The invention discloses a vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals, and relates to a novel process for crystal growth. On the basis of a kyropoulos method, the advantages of a Czochralski method (CZ), a heat exchange method (HEM), a temperature grade method (TGT) and a Bridgman method are combined, and equipment comprises a pulling structure, wherein the lower part of the pulling structure is connected with a furnace cover and a hearth; a flange seat, a metal heating body, a heat-insulating cover and a crucible are arranged in the hearth; an annular combined heat-insulating cover is fixed on the lower part of the flange seat; a crucible support and a crucible supporting rod for supporting the crucible are arranged below the crucible; and the heat-insulating cover covers the crucible supporting rod. By creating a special high-temperature vacuum crystal furnace capable of adjusting the temperature grade and the center of a temperature field, the large-size high-temperature oxide crystals are produced. The method has the advantage that: various high-quality high-temperature oxide crystal materials are manufactured at the lowest energy consumption and the lowest cost.

Description

technical field [0001] The invention relates to a new crystal growth process, in particular to a method for growing large-sized high-temperature oxide crystals by Vertical Temperature Grade Kyropoulos Method (VGKM or VGKT for short). Background technique [0002] With the development of optical communication, laser industry and LED industry, the quality and size of various optical functional crystal materials required are getting larger and larger. At present, the growth of large-size and high-quality optical functional crystals, especially high-temperature oxide crystals, is mainly the Kyropoulos method, the pulling method (CZ), the heat exchange method (HEM), the temperature gradient method (TGT) and the crucible drop method; There are more or less certain limitations, and the industrial production of high-temperature oxide crystals cannot be well realized. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B11/00C30B17/00C30B29/16
Inventor 黄小卫
Owner FUJIAN XINJING PRECISION CORUNDUM TECH CO LTD
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