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Method for growing large-size high-temperature oxide crystals by using top-seeded temperature gradient method

A high-temperature oxide and seed crystal temperature technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., to achieve the effect of reducing dislocations

Inactive Publication Date: 2010-05-12
UNIONLIGHT TECH
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Problems solved by technology

[0003] The technical problem solved by the present invention is to provide a method for growing large-sized high-temperature oxide crystals by the top seed crystal temperature gradient method that can solve the quality problems and quality stability problems of the industrialized mass production of high-temperature oxide crystals

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  • Method for growing large-size high-temperature oxide crystals by using top-seeded temperature gradient method
  • Method for growing large-size high-temperature oxide crystals by using top-seeded temperature gradient method

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Embodiment Construction

[0013] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0014] Such as figure 1 As shown, a method for growing large-sized high-temperature oxide crystals by the top seed crystal temperature gradient method includes a pulling structure 1, and connecting the pulling structure 1 with the furnace cover 2 and the furnace 3, wherein a flange seat is installed in the furnace 3 4. Metal heating body 5, heat preservation cover 6 and crucible 7, metal heating body 5 is placed on flange seat 4, ring-shaped combined insulation layer 8 is fixed under flange seat 4, crucible support 9 and crucible support rod are installed under crucible 7 10 is used to support the crucible 4, the crucible supporting rod 10 passes through the lower heat preservation cover 11, and a layer of ceramic insulator is coated on the outs...

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Abstract

The invention relates to a method for growing large-size high-temperature oxide crystals by using a top-seeded temperature gradient method, which relates to a new process of crystal growth and comprises the following steps of: combining a Kyropoulos method, a Czochralski method (CZ), a heat exchange method (HEM), a temperature gradient technique (TGT) and a Bridgman-Stockbarge method together, creating a special high temperature vacuum crystal furnace with adjustable temperature gradient and temperature field center, and producing the large-size high temperature oxide crystals through charging, high vacuum pimping, material melting by temperature rise, crystal seed washing, real-time temperature field adjustment, seeding by CZ, multiple reducing processes, a shouldering process by CZ, an isodiametric process by the Kyropoulos method, heat exchange by HEM combined with isodiametric growth by a TGT technology (a diameter control technology is CZ weighting), ending and crucible separation by CZ and annealing. The method is also suitable for a high vacuum environment and an atmosphere protection environment. The method has the advantage that the lowest energy consumption and the lowest cost are utilized for producing multiple high-quality high-temperature oxide crystal material products.

Description

technical field [0001] The invention relates to a new crystal growth process, in particular to a method for growing large-sized high-temperature oxide crystals by a top seed crystal temperature gradient method (TSTGT). Background technique [0002] With the development of optical communication, laser industry and LED industry, the quality and size of various optical functional crystal materials required are getting larger and larger. At present, the growth of large-size and high-quality optical functional crystals, especially high-temperature oxide crystals, is mainly the Kyropoulos method, the pulling method (CZ), the heat exchange method (HEM), the temperature gradient method (TGT) and the crucible drop method; There are more or less certain limitations, and the industrial production of high-temperature oxide crystals cannot be well realized. Contents of the invention [0003] The technical problem solved by the present invention is to provide a method for growing large...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/16
Inventor 黄小卫
Owner UNIONLIGHT TECH
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