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Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus

A synthesis device and synthesis method technology, applied in the field of semiconductor single crystal material preparation, can solve the problems of As group and Ga group, uneven distribution, etc., to reduce the loss of arsenic, avoid carbon impurity contamination, and avoid contamination Effect

Inactive Publication Date: 2009-08-05
CHINA ELECTRONICS TECH GRP NO 46 RES INST +1
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  • Abstract
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Problems solved by technology

[0009] The technical problem solved by the present invention is to provide a gallium arsenide polycrystalline synthesis method and device without liquid sealing, which overcomes the defects of As clusters and Ga clusters in GaAs polycrystals synthesized by boron oxide liquid sealing and uneven distribution

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  • Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus
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  • Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus

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Embodiment Construction

[0026] In order to further explain the technical means and effects adopted by the present invention to achieve the intended purpose, the method and device for the gallium arsenide polycrystalline liquid-free sealing synthesis proposed by the present invention are described in detail below in conjunction with the accompanying drawings and examples.

[0027] The first embodiment of the present invention is such as figure 1As shown, a gallium arsenide polycrystalline liquid-free seal synthesis device includes: a stainless steel synthesis furnace body 1 with a cooling circulating water jacket and a graphite system, the synthesis furnace body 1 can withstand a high pressure limit of 10 MPa, and a high temperature resistance limit of 150°C. The graphite system of the device includes a heat preservation unit, a heating unit, a synthesis unit and a motion unit that can lift and rotate the synthesis unit. The heat preservation unit is composed of a graphite heat preservation cover 2 an...

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Abstract

The invention discloses a GaAs polycrystal and liquid seal-free synthesis method and a GaAs polycrystal and liquid seal-free synthesis device. The method is based on the liquid seal-free synthesis of GaAs polycrystals and positions crystallization by a vertical Bridgman method so that synthetized cylindrical GaAs polycrystals do not comprise gallium groups and arsenic groups and are extremely uniformly distributed so as to directly satisfy the requirements of the vertical Bridgman method or the vertical gradient freezing method for the growth of GaAs single crystals. The device comprises a synthesis furnace and a graphite system, wherein the graphite system comprises an insulation unit, a heating unit, a synthesis unit and a motion unit capable of enabling the synthesis unit to lift and rotate. The synthetized GaAs polycrystals synthesized by the method of the invention reach a stoichiometric proportion at the level of a horizontal Bridgman method and avoid staining a Si impurity. Compared with a boric oxide liquid seal synthesis method, the synthesis method avoids staining a boron impurity.

Description

technical field [0001] The invention relates to the field of semiconductor single crystal material preparation, in particular to a method and device for synthesizing gallium arsenide (GaAs) polycrystal. Background technique [0002] Before growing GaAs single crystal, GaAs polycrystal must be synthesized first. The GaAs polycrystalline synthesis has experienced the horizontal Bridgman method, the low-pressure boron oxide liquid-sealed As injection synthesis method, and the high-pressure boron oxide liquid-sealed in-situ synthesis method. [0003] The horizontal Bridgman method (Xie Yonggui, ultra-high-speed compound semiconductor devices, Beijing: Yuhang Press, 1998, 123-145) synthesizes gallium arsenide in a sealed quartz ampule. Diffusion baffles, ampoule seal tubes, and gallium arsenide seed crystals are treated to remove organic matter and heavy metal ions, and then cleaned with deionized water and then dried; the quartz boat is filled with gallium and seed crystals aft...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/42
Inventor 周春锋刘晏凤杨连生
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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