Copper-idium-selenium CuInSe solar cell and preparing method thereof

A solar cell, copper indium selenide technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve problems such as cost reduction, difficulty in realizing industrialization, large waste of precious metals, etc. good adhesion

Inactive Publication Date: 2006-10-25
EAST CHINA NORMAL UNIV
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Problems solved by technology

Although CIS batteries with high conversion efficiency can be prepared, the chemical ratio of elements is difficult to be precisely controlled by evaporation, so the yield rate of batteries is not high, and it is difficult to realize industrialization; also when using evaporation method, the utilization of raw materials The rate is low, which is a big waste for precious metals, which is not conducive to reducing costs

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  • Copper-idium-selenium CuInSe solar cell and preparing method thereof
  • Copper-idium-selenium CuInSe solar cell and preparing method thereof

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Embodiment Construction

[0019] Such as figure 1 As shown, the high-efficiency copper indium selenium CuInSe described in the present invention 2 A solar cell consists of a lower electrode 1, a P-type copper indium selenium CuInSe 2 Sheet 2, transition layer CdS 3, N-type ZnO layer 4 and upper electrode 5. P-type Copper Indium Selenium CuInSe 2 The absorber layer is CuInSe 2 Single wafer, the lower electrode adopts Cu / Mo (copper / molybdenum) alloy.

[0020] In order to prepare the above-mentioned high-efficiency copper indium selenium CuInSe 2 Solar cell, preparation method of the present invention, comprises the following steps:

[0021] A certain amount of high-purity copper (99.999%), indium (99.999%) and selenium (99.999%) particles are removed from the surface oxide layer and then fully mixed according to the molar ratio of Cu:In:Se=1:1:2. Put it into a cleaned thick-walled quartz tube (crucible), which has been sealed at one end. Vacuum the quartz tube to 10 -6 , the other end of the quar...

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Abstract

This invention discloses a CuInSe2 solar energy battery and its preparation method, in which, said battery is composed of a lower electrode, a P type CuInSe2 absorption layer, a transition layer CdS, a N-type ZnO layer and an upper electrode, the preparation method includes: applying a low frequency vibration vertical Bridgman method or a low vibration pot falling method to prepare type P CuInSe2 monocrystal chips, applying a water-bath method CBD to manufacture a transition layer CdS on one side of the monocrystal chip, utilizing the RF magnetic control spatter to ZnO target doped by Al2O3 on the CdS to prepare type-N ZnO layer, utilizing magnetic control spatter or electronic beam evaporation to deposit Al or Ag film by masks as the upper electrode and deposit the lower electrode at the other side of the monocrystal chip, which applies Cu / Mo alloy to replace Mo to fasten the link between the back electrode and the CuInSe2 absorption layer to improve the preparation technology of CuInSe2.

Description

technical field [0001] The invention relates to a compound semiconductor single crystal solar cell and a preparation method thereof, in particular to a compound semiconductor single crystal solar cell made of copper indium selenium CuInSe 2 The structure and preparation method of a solar cell with an absorbing layer belong to the technical field of photoelectric materials and new energy sources. Background technique [0002] In today's world, with the advancement of science and technology, the development of economy and the increase of population, human beings have an increasing demand for energy. However, important resources such as oil, natural gas and coal are limited after all. Most countries have already felt that fossil fuels The reserves of fossil fuels are decreasing day by day, and are even facing the danger of depletion, while the consumption of fossil fuels will have a fundamental impact and damage on the environment. According to different climate models, Chines...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0749H01L31/18
CPCY02E10/541Y02P70/50
Inventor 黄素梅孙卓黄士勇朱红兵李晓冬陈奕卫
Owner EAST CHINA NORMAL UNIV
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