Growing method by Ti3O5 by bridgman method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 苏州晶生新材料有限公司
- Publication Date
- 2008-10-08
Abstract
Description
technical field
[0001] The invention relates to a crystal growth technology by a crucible drop method, that is, a crucible drop method is used to grow trititanium pentoxide crystals, and belongs to the field of crystal growth. Background technique
[0002] Titanium pentoxide (Ti 3 o 5 ) crystals belong to the orthorhombic system, with a density of ~4.60g / cm3 and a melting point of ~1760°C. Ti 3 o 5 It is a relatively stable compound in the low-priced series of titanium oxides. It has metal-like properties and high conductivity at room temperature. Compared with noble metal electrode materials, it is cheap and has strong acid and alkali corrosion resistance, so it can be used As an electrode material to replace noble metals. Ti 3 o 5 It is a non-stoichiometric compound, O / Ti can vary between 1.66-1.70, it contains a large number of oxygen vacancies, the concentration of quasi-free electrons is high, and its resistance can change with the change of the atmosphere, so it...