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Method for manufacturing high resistivity tellurium-zincium-cadmium crystal

A high resistivity, cadmium zinc telluride technology, applied in crystal growth, chemical instruments and methods, single crystal growth and other directions, can solve the problems of poor repeatability and difficult to master, achieve small changes in resistivity, improve uniformity and utilization rate , the effect of good resolution

Active Publication Date: 2008-07-16
IMDETEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method requires very accurate Cd compensation and In doping concentration, and at the same time, it will lead to completely different results due to different growth and annealing conditions, so the repeatability is poor and it is not easy to master

Method used

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  • Method for manufacturing high resistivity tellurium-zincium-cadmium crystal
  • Method for manufacturing high resistivity tellurium-zincium-cadmium crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1: adopt component to be Cd 0.9 Zn 0.1 Te crystal, the mass percentage of excess Te is 2%, and the In doping concentration is 1×10 18 cm -3 .

[0021] First, the stoichiometric ratio will satisfy the Cd 0.9 Zn 0.1 The purity of Te is that 350g of the raw material of 7 9s is packed into the high-purity quartz crucible, and on this basis, adding mass percent is 2% excess Te7g, and the volume concentration is 1×10 18 cm -3 In0.0105g.

[0022] In the second step, a molecular pump is used to evacuate the inside of the quartz crucible. When the vacuum degree reaches 5×10 -5 At Pa, seal the quartz crucible.

[0023] The third step is to put the crucible into a swingable synthesis furnace to synthesize the raw materials, so that they can undergo a chemical reaction and mix them evenly. The time is 210 hours.

[0024] In the fourth step, the crucible is placed in a five-stage crystal growth furnace for crystal growth. The growth method is descending vertica...

Embodiment 2

[0028] Embodiment 2: adopt component to be Cd 0.9 Zn 0.1 Te crystal, the mass percentage of excess Te is 0.5%, and the In doping concentration is 6×10 18 cm -3 .

[0029] First, the stoichiometric ratio will satisfy the Cd 0.9 Zn 0.1 The purity of Te is that the raw material of 7 9 is loaded into the interior of high-purity quartz crucible, and on this basis, adding mass percent is 0.5% excess Te1.75g, and volume concentration is 6×1018 cm -3 In0.063g.

[0030] In the second step, a molecular pump is used to evacuate the inside of the quartz crucible. When the vacuum degree reaches 5×10 -5 At Pa, seal the quartz crucible.

[0031] The third step is to put the crucible into a swingable synthesis furnace to synthesize the raw materials, so that they can undergo a chemical reaction and mix them evenly. The time is 200 hours.

[0032] In the fourth step, the crucible is placed in a five-stage crystal growth furnace for crystal growth. The growth method is descending vert...

Embodiment 3

[0035] Embodiment 3: adopt component to be Cd 0.9 Zn 0.1 Te crystal, the mass percentage of excess Te is 1%, and the In doping concentration is 4.5×10 18 cm -3 .

[0036] First, the stoichiometric ratio will satisfy the Cd 0.9 Zn 0.1 The purity of Te is that the raw material of 7 9 is loaded into the high-purity quartz crucible inside, and on this basis, adding mass percent is 1% excess Te3g, and volume concentration is 4.5 * 10 18 cm -3 In 0.0473g.

[0037] In the second step, a molecular pump is used to evacuate the inside of the quartz crucible. When the vacuum degree reaches 5×10 -5 At Pa, seal the quartz crucible.

[0038] The third step is to put the crucible into a swingable synthesis furnace to synthesize the raw materials, so that they can undergo a chemical reaction and mix them evenly. The time is 190 hours.

[0039] In the fourth step, the crucible is placed in a five-stage crystal growth furnace for crystal growth. The growth method is descending vertic...

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Abstract

The invention discloses a preparing method of high resistivity cadmium zinc telluride crystal. The method is characterized by comprising the following steps: according to stoichiometric ratio, the material which satisfies Cd0.9Zn0.1Te and the purity of which is 99.99999 percent are put in the inside of a super pure silica pot, and excessive Te with the mass percent of 0.5 percent to 2 percent and In with the volume concentration of (1-6) multiplied by 10<18>cm<-3> are added in the pot; the inside of the silica pot is vacuum-pumped and sealed; the silica pot is put in a synthesis furnace to synthesize raw materials; the pot is put in a five-section crystal growth furnace to grow crystal by the descending vertical Bridgman method. The method adopts the five-section normal pressure single crystal growth furnace and excessive Te is added in the crystal growth process, therefore the method provides enough deep level TeCd<2 plus> for the growth of Cd1-xZnxTe crystal, reduces production cost and obtains stable Cd1-xZnxTe crystal with high resistivity. At the same time, the partition ratio of In in Cd0.9Zn0.1Te crystal ingot approaches 1, thus causing the resistivity change of Cd0.9Zn0.1Te crystal ingot less and improving the uniformity and utilization rate of Cd0.9Zn0.1Te crystal.

Description

technical field [0001] The invention relates to a high resistivity cadmium zinc telluride (hereinafter referred to as Cd 1-x Zn x Te) crystal preparation method. Background technique [0002] Cd 1-x Zn x Te crystal is one of the most ideal semiconductor materials for the manufacture of room temperature X-ray and gamma-ray detectors. Generally speaking, the manufacture of X-ray and gamma-ray detectors requires Cd 1-x Zn x Te crystal resistivity not less than 10 9 Ω·cm. [0003] The document "J.Vac.Sci.Technol., 1992, Vol.B10(4)" discloses that Aurora Technologies Corporation of the United States uses a high pressure method to grow Cd 1-x Zn x Te crystal method, the prepared Cd 1-x Zn x Te crystal resistivity up to 1.1×10 10 Ω·cm. [0004] The document "J.Electro.Mater., 2004, Vol.33(6)" discloses that the eV products company in the United States uses a high pressure method to grow Cd 1-x Zn x Te crystal method, the prepared Cd 1-x Zn x Te crystal resistivity i...

Claims

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Application Information

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IPC IPC(8): C30B29/48
Inventor 介万奇王涛徐亚东刘伟华华慧孙晓燕
Owner IMDETEK
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