A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy
0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or (1)
0.40<x≦0.50, 0.15<y<0.40, and 0.15<z<0.35. (2)
x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.