Multicomponent compounds infrared crystal growth apparatus

Abstract

The invention provides a growth device of an infrared crystal of polynary compounds and comprises a stove, a hearth box inside the stove comprises three temperature regions of an upper high-temperature region, a middle gradient region and a lower low-temperature region from up to down, a heater with standalone temperature control is respectively arranged inside the upper high-temperature region and the lower low-temperature region, a thermocouple with temperature control is respectively positioned inside the upper high-temperature region and the lower low-temperature region, and the middle gradient region is a heat-insulating and fireproof layer with ventholes; a loading rod that is used for loading a crucible pot of crystal growth is arranged inside the hearth box, a lower end of the loading rod is connected with a rotary clamping head that is connected with an electric motor, and the electric motor is arranged on a spiral travel mechanism. The growth device can obtain temperature fields that are suitable for crystal growth according to the growth habits of different infrared crystals of polynary compounds, maintains the stability of a solid-liquid interface and realizes the crystal growth in the planar interface. By using the growth device and adopting the Bridgman method, the infrared crystal of polynary compounds with complete appearance and well crystal property can be prepared.

Description

technical field [0001] The invention relates to a growth device for multi-component infrared crystals, belonging to the technical field of inorganic crystal growth. Background technique [0002] Mid-to-far infrared coherent light sources have very important applications in the laser field. In the military field, such as: laser guidance, laser directional infrared interference, laser communication, infrared remote sensing, infrared thermal imager, infrared ranging, laser aiming, etc.; in the civilian field, Such as: trace gas detection in the environment, biology, medicine, etc. have a wide range of applications. The current laser host materials have been able to produce tunable coherent light source output within a certain range, but because their tunable wavelength range is determined by the gain bandwidth of the active ions in the laser medium, their tunable range and efficiency are greatly limited. limits. Multi-component infrared crystals such as: AgGaS 2 , AgGaSe 2 ...

AI Technical Summary

Problems solved by technology

The infrared crystals of the above-mentioned compounds are recognized as relatively difficult crystals to grow. Generally, the Bridgman method (Bridgman method) can be used for single crystal growth. The gradient area of ​​the temperature field of the traditional Bridgman method, that is, the temperature gradient at the solid-liquid interface is small. and cannot be adjusted according to different crystal growth habits

These compounds have many components, large difference in melting point, large difference in saturated vapor pressure, and easy to decompose at high temperature; especially in the crystallization process, due to the different segregation coefficients of the components of the compound, and the large difference in thermal conductivity between solid and melt , as the crystal growth process changes, the temperature field in the crystallization region will change, causing the solid-liquid interface to drift, and it is difficult to maintain the flat (or slightly convex) interface growth required for crystal growth. Therefore, the usual Bridgman method It is difficult to obtain compound semiconductor single crystals with good integrity with existing growth equipment, which restricts the application of infrared crystals

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