Novel inorganic compound photochromic material, as well as preparation and use thereof
A technology of photochromic materials and inorganic compounds, applied in luminescent materials, chemical instruments and methods, static memories, etc., to achieve the effects of obvious changes in light absorption, fast discoloration response, and high thermal decomposition temperature
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Embodiment 1
[0026] Example 1.Hg 2 AsCl 2 Compound Synthesis:
[0027] Hg 2 AsCl 2 It is obtained by medium-high temperature solid-phase synthesis method, and the specific reaction formula is:
[0028] 1Hg 2 Cl 2 +1As→Hg 2 AsCl 2
[0029] The specific operation steps are:
[0030] Put the corresponding mass of reactants into a sealed vacuum glass tube for heating, raise the temperature to 300°C at a rate of 50°C / h, keep the temperature for 120 hours, then cool down to 50°C at a rate of 3°C / h, and finally turn off the power. Take out the glass tube to get the target compound in the form of orange-yellow flaky crystals.
[0031] This type of compound is a monoclinic crystal system, the space group is C2 / m (No.12), and the unit cell parameter is a=13.94 b=8.21 c=8.92 α=γ=90°, β=97, Z=8.
[0032] In addition, we conducted optical performance and photochromic tests on the obtained chlorine, arsenic and mercury compounds. A single crystal of mercury chloride, arsenic and mercur...
Embodiment 2
[0033] Example 2.Hg 2 AsCl 2 Single Crystal Growth:
[0034] Single crystal materials were prepared by the Bridgman method.
[0035] Seed crystals were added to the crucible, and the Hg 2 AsCl 2 The ternary compound pellet is placed on the seed crystal in the crucible, and then its crucible is placed in a single crystal furnace to melt Hg 2 AsCl 2 The ternary compound and the seed crystal are placed on the top of the single crystal furnace, and at a temperature of 550°C, the crucible’s descending speed is controlled at 25mm / h, and Hg with a smooth surface and no macro and micro defects can be grown. 2 AsCl 2 single crystal.
Embodiment 3
[0036] Example 3.Hg 2 AsCl 2 Thin film material growth:
[0037] Thin film material growth is accomplished by vacuum thermal evaporation.
[0038]The specific process is: high-purity Hg with a purity of 99.999% 2 Cl 2 , As and (or already obtained high-purity Hg 2 AsCl 2 Powder) Three kinds of powders are put into the vacuum evaporation chamber, and the vacuum degree is 1.5×10 -3 Evaporate under Pa, use single crystal silicon wafer or ITO film glass wafer as substrate, can prepare uniform thin film material on it, its composition can be obtained by adjusting the mutual ratio of three kinds of raw material evaporation, and the film thickness can be according to Requires adjustment of evaporation rate.
[0039] The obtained thin film material was irradiated with a 355nm nanosecond laser, and it was found that the response time of its color change reached the microsecond level, and the material could develop color when it was irradiated by light of different intensities an...
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