Bridgman method growth process of cesium iodide and thallium-doped cesium iodide monocrystalline

A crucible descending method and thallium cesium iodide technology are applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., and can solve the problems of low crystal growth efficiency of cesium iodide, unsuitable for industrial production, unstable crystal quality, and the like, Achieve the effect of reducing the possibility of secondary nucleation, low production cost and low afterglow value

Active Publication Date: 2012-03-21
上海御光新材料科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the disadvantages of low cesium iodide crystal growth efficiency, high growth cost, unstable crystal quality, and unsuitability for industrial production in the existing growth technology, and provide a crucible drop method growth process for cesium iodide single crystal, To grow high-quality, low-cost, large-size (Dia90×350mm) cesium iodide crystals

Method used

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  • Bridgman method growth process of cesium iodide and thallium-doped cesium iodide monocrystalline
  • Bridgman method growth process of cesium iodide and thallium-doped cesium iodide monocrystalline
  • Bridgman method growth process of cesium iodide and thallium-doped cesium iodide monocrystalline

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Effect test

Embodiment 1

[0031] (1) Raw material treatment: take high-purity CsI with a purity of 99.999% as raw material, add corresponding Tl:I pellets according to the concentration of 800ppm, after mixing evenly, dehydroxylate, dry, and dry in stages at 200°C under vacuum;

[0032] (2) Crucible treatment: First, soak a Φ80×500mm flat-bottomed quartz tube in HF solution for 3 hours, then wash it with deionized water, dry it in a vacuum oven for 8 hours, and finally put the quartz crucible into a tube furnace for plating carbon. The carrier gas used for coating is high-purity nitrogen, the carbon source is methane, the coating temperature is 1015°C, the gas flow rate is 5.5L / h, the coating time is 4h, and the cooling time is 17h.

[0033] (3) Crystal growth: the raw material processed in step (1) is packed in the quartz crucible processed in step (2), the raw material is vacuum-sealed in the quartz crucible coated with carbon film, and then placed in three In the high temperature zone (T1) of the t...

Embodiment 2

[0035] (1) Raw material treatment: take high-purity CsI with a purity of 99.999% as raw material, add corresponding Tl:I granular material according to the concentration of 1000ppm, after mixing evenly, dehydroxylation, drying, and drying in stages at 200°C under vacuum;

[0036] (2) Crucible treatment: First, soak a Φ96×550mm flat-bottomed quartz tube in HF solution for 3 hours, then wash it with deionized water, dry it in a vacuum oven for 8 hours, and finally put the quartz crucible into a tube furnace for plating carbon. The carrier gas used for coating is high-purity nitrogen, the carbon source is methane, the coating temperature is 1015°C, the gas flow rate is 5.5L / h, the coating time is 4h, and the cooling time is 17h.

[0037](3) Crystal growth: the raw material processed in step (1) is packed in the quartz crucible processed in step (2), the raw material is vacuum-sealed in the quartz crucible coated with carbon film, and then placed in three In the high temperature ...

Embodiment 3

[0039] (1) Raw material treatment: take high-purity CsI with a purity of 99.999% as raw material, add corresponding Tl:I pellets according to the concentration of 1500ppm, after mixing evenly, dehydroxylate, dry, and dry in stages at 200°C under vacuum;

[0040] (2) Crucible treatment: First, soak a Φ96×550mm flat-bottomed quartz tube in HF solution for 3 hours, then wash it with deionized water, dry it in a vacuum oven for 8 hours, and finally put the quartz crucible into a tube furnace for plating carbon. The carrier gas used for coating is high-purity nitrogen, the carbon source is methane, the coating temperature is 1015°C, the gas flow rate is 5.5L / h, the coating time is 4h, and the cooling time is 17h.

[0041] (3) Crystal growth: the raw material processed in step (1) is packed in the quartz crucible processed in step (2), the raw material is vacuum-sealed in the quartz crucible coated with carbon film, and then placed in three In the high temperature zone (T1) of the ...

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Abstract

The present invention provides a bridgman method growth process of pure cesium iodide and thallium-doped cesium iodide monocrystalline. The bridgman method growth process comprises the following steps: firstly performing hydroxyl and drying pretreatment for eliminating OH-, absorbed water and crystal water wherein; after drying, filling the raw material in a quartz crucible which is coated by a carbon film, and performing vacuum-pumping sealing; and realizing crystal growth in a descending furnace which is internally provided with a high-temperature area, a medium-temperature area and a low-temperature area, wherein a descending speed is 1.5-3.0mm / h and a temperature gradient of a crystal growth interface is 30+ / -2 DEG C / cm. The bridgman method growth process of the pure cesium iodide and thallium-doped cesium iodide monocrystalline has the following characteristics: simple structure of a growth furnace which is used therein, high convenience in operation, adjustable gradient of the temperature in the hearth, capability of growing a plurality of pieces of crystal at a plurality of equivalent stations in the furnace, reduced crystal cost, high suitability for large-scale production, etc. The cesium iodide crystal which is grown according to the invention is suitable for the application fields such as safety inspection and nuclear medicine imaging.

Description

technical field [0001] The present invention relates to the preparation method of pure cesium iodide and thallium-doped cesium iodide (CsI:Tl) single crystal (hereinafter referred to as cesium iodide crystal), in particular to a method of growing high-quality cesium iodide crystal by using the coating quartz crucible descending method New Technology. The invention belongs to the technical field of crystal growth. Background technique [0002] CsI:Tl crystal is a kind of scintillation crystal discovered in the 1960s. It has the advantages of large atomic number, high light output, good matching of light emission peak (550nm) with the sensitive area of ​​silicon photodiode, and not easy to deliquescence. Physics, security inspection, nuclear medicine imaging, geological exploration and other fields as scintillation materials in electromagnetic calorimeters and detectors. The growth methods of cesium iodide crystals are: (1) pulling method; (2) vacuum descent method; (3) non-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/00
Inventor 唐华纯李国荣曹家军吴中元
Owner 上海御光新材料科技股份有限公司
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