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High-frequency frequency source device

A frequency source, high-frequency technology, applied in the direction of automatic power control, electrical components, etc., can solve the problems of poor noise performance, achieve the effect of large output power, high cut-off frequency, and easy phase locking

Active Publication Date: 2012-05-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the technical problem of poor noise performance of the high-frequency frequency source device based on the diode negative resistance structure in the prior art, and propose a high-frequency frequency source device

Method used

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Examples

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Embodiment 1

[0017] figure 1 It is a schematic diagram of a high frequency source device according to an embodiment of the present invention. Such as figure 1 As shown, the high-frequency frequency source device disclosed in the present invention includes: a single-chip GaN HEMT microwave oscillator 10, which is used to generate a high-power microwave oscillation signal; a phase-locked circuit 20, connected with the single-chip GaN HEMT microwave oscillator 10, used To receive the microwave oscillation signal, realize the phase-locking of the microwave oscillation signal output by the single-chip GaN HEMT microwave oscillator 10; the frequency multiplication circuit 30 is connected with the single-chip GaN HEMT microwave oscillator 10, and is used to receive the single-chip GaN HEMT microwave oscillator 10 The phase-locked microwave oscillation signal generated by the microwave oscillator is multiplied to a preset high-frequency frequency and then output.

[0018] Due to the low output p...

Embodiment 2

[0022] figure 2 It is a schematic diagram of a high-frequency frequency source device according to Embodiment 2 of the present invention. Such as figure 2 As shown, the phase-locked circuit 20 includes a prescaler 203 , a crystal oscillator reference source 201 , and a microwave phase-locked loop 202 . Among them, the prescaler 203 is connected with the single-chip GaN HEMT microwave oscillator 10, and is used to receive the microwave oscillation signal and perform frequency predivision on the microwave oscillation signal; the crystal oscillator reference source 201 is used to generate the reference frequency signal; the microwave lock The phase loop 202 is connected to the prescaler 203 and the crystal oscillator reference source 201, and is used to compare the prescaled microwave oscillation signal with the reference frequency signal, generate a calibration voltage signal, and send the calibration voltage signal to the single-chip GaN The HEMT microwave oscillator 10 rea...

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Abstract

The invention discloses a high-frequency frequency source device, comprising a single chip GaNHEMT micro-wave oscillator for generating a high-power micro-wave oscillation signal, a phase lock circuit for receiving the micro-wave oscillation signal, and realizing phase lock of the micro-wave oscillation signal output by the GaNHEMT micro-wave oscillator, and a frequency multiplier circuit for receiving the phase locked micro-wave oscillation signal generated by the single chip GaNHEMT micro-wave oscillator, multiplying the micro-wave oscillation signal to a preset high-frequency frequency and then outputting the micro-wave oscillation signal. The high-frequency frequency source device of the invention conquers the disadvantage of bad noise performance of the high-frequency frequency source device based on a diode negative resistance structure in prior art, and has the advantages of low noise, high tunable performance and good stability.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a high-frequency frequency source device capable of outputting millimeter-wave to terahertz frequency signals. Background technique [0002] The realization of high-frequency frequency sources whose operating frequency reaches millimeter waves and terahertz is a current problem in this field. Due to the limitation of the output power and cut-off frequency of the three-port oscillation source itself, most of the current high-frequency frequency sources are realized by using diode negative resistance devices. The device, for example, uses a Gunn diode or an avalanche diode (IMPATT), cooperates with a resonant cavity to realize a millimeter-wave oscillator, and then obtains a terahertz oscillation through frequency multiplication. The disadvantages of this solution are: due to the characteristics of the diode device itself, the noise performance of the high-frequency...

Claims

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Application Information

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IPC IPC(8): H03L7/26
Inventor 王显泰吴旦昱刘洪刚刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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