A deep silicon etching method for mems

A technology of deep silicon etching and etching cavity, which is applied to the process, coating, microstructure device, etc. for producing decorative surface effects, and can solve the problems of uneven etching, high temperature of chamber and sample stage, and MEMS devices. Problems such as high side wall roughness, to achieve the effect of maintaining integrity and providing uniformity

Active Publication Date: 2022-02-22
JIANGSU LEUVEN INSTR CO LTD
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Problems solved by technology

In the deep silicon etching system, if there are too many cycles in multiple steps, the temperature of the chamber and the sample stage will be too high, which will lead to uneven etching and excessive roughness of the side wall of the MEMS device.

Method used

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  • A deep silicon etching method for mems
  • A deep silicon etching method for mems
  • A deep silicon etching method for mems

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Embodiment Construction

[0045] In order to clearly illustrate the technical features of the solution, the solution will be described below through specific implementation modes.

[0046] see Figure 1 to Figure 3 , the present invention is: a MEMS deep silicon etching method specifically includes the following content:

[0047] (1) Pretreatment steps of MEMS samples: the wafer is transferred from the transfer chamber to the vacuum reaction chamber, and a cycle of deposition steps, cleaning steps and etching steps are completed in the vacuum reaction chamber. After completing several cycles , the depth of silicon etching meets the requirements of MSMS devices, the MEMS devices are transferred from the vacuum reaction chamber to the transfer chamber, the wafer is returned to the atmosphere state, and the processing on the subsequent equipment is carried out; after the MEMS samples are subjected to the photolithography process, the The CD width of the photoresist is 50um, the line spacing is 40um, the ...

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Abstract

The invention provides a MEMS deep silicon etching method, which belongs to the technical field of deep silicon etching. The technical solution is: a MEMS deep silicon etching method, including deposition steps, cleaning steps, etching steps, purging steps, repeated deposition steps, repeated cleaning steps, repeated etching steps and repeated purging steps, after several The deposition step, cleaning step, etch step and purge step are side-circulated, and the sample is out of vacuum. The beneficial effects of the present invention are: the deep silicon etching method of the present invention can be applied in the industrial manufacturing environment of large-scale integrated circuits, in particular, it can enable the sensor element to maintain the integrity of the device during long-term etching, and It can meet the needs of device design, adding a purge step can reduce the temperature of the vacuum reaction chamber and the sample stage, so that the vacuum reaction chamber can be kept in a constant range, which helps to provide the uniformity of large-scale samples after etching and the roughness of the sidewall of the MEMS device.

Description

technical field [0001] The invention relates to the technical field of deep silicon etching, in particular to a MEMS deep silicon etching method. Background technique [0002] Micro-electromechanical systems (MEMS) is the integration of information sensing, processing, mechanical execution and other micro-devices in a micro-system in a high-density, low-cost manner according to the manufacturing principles of integrated circuits. The interdisciplinary phenomenon in MEMS is extremely obvious, mainly involving micromachining technology, mechanics, solid acoustic theory, heat flow theory, electronics, biology, etc. The characteristic length is from 1um to 1mm. [0003] The processing technology for MEMS devices is not mechanical. Instead, they employ microfabrication techniques similar to batch processing of integrated circuits. Mass manufacturing can significantly reduce the cost of mass production. If the area of ​​a single MEMS sensor chip is 5mm*5mm, then an 8-inch (20 c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00531B81C1/00555B81C1/00619
Inventor 王珏斌许开东胡东东车东晨
Owner JIANGSU LEUVEN INSTR CO LTD
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