A deep silicon etching method for mems
A technology of deep silicon etching and etching cavity, which is applied to the process, coating, microstructure device, etc. for producing decorative surface effects, and can solve the problems of uneven etching, high temperature of chamber and sample stage, and MEMS devices. Problems such as high side wall roughness, to achieve the effect of maintaining integrity and providing uniformity
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[0045] In order to clearly illustrate the technical features of the solution, the solution will be described below through specific implementation modes.
[0046] see Figure 1 to Figure 3 , the present invention is: a MEMS deep silicon etching method specifically includes the following content:
[0047] (1) Pretreatment steps of MEMS samples: the wafer is transferred from the transfer chamber to the vacuum reaction chamber, and a cycle of deposition steps, cleaning steps and etching steps are completed in the vacuum reaction chamber. After completing several cycles , the depth of silicon etching meets the requirements of MSMS devices, the MEMS devices are transferred from the vacuum reaction chamber to the transfer chamber, the wafer is returned to the atmosphere state, and the processing on the subsequent equipment is carried out; after the MEMS samples are subjected to the photolithography process, the The CD width of the photoresist is 50um, the line spacing is 40um, the ...
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