5results about How to "Increase etch depth" patented technology

The invention relates to the technical field of solar cells, and provides a back contact cell and a preparation method thereof, a certain proportion of carbon element is doped in a deposited first semiconductor layer and a mask layer, so that the acid and alkali resistance and corrosion resistance of the first semiconductor layer and the mask layer are improved, and the texturing time is prolonged; and meanwhile, the etching depth of laser is increased, the texturing time is prolonged, a second semiconductor opening area with a concave textured structure is formed, then local polishing is performed, the tip end of the rectangular pyramid mechanism is smoothed, and a textured surface with an inverted frustum-shaped structure is formed in the second semiconductor opening area, so that the passivation effect and the filling factor are improved.

The invention discloses a gallium nitride two-dimensional electron gas channel side wall spin injection information device structure and a preparation method, and belongs to the technical field of semiconductor information devices. The structure comprises a substrate layer, a buffer layer, a channel layer, a barrier layer, a ferromagnetic layer, a C1 electrode layer, a C2 electrode layer, a passivation layer and an electrode window. The preparation method comprises the following steps: preparing a substrate; epitaxial growth; performing etching; growing an electrode; carrying out ferromagnetic growth; growing an electrode; passivating the surface; and windowing and leading wires. According to the gallium nitride two-dimensional electron gas channel side wall spin injection information device structure and the preparation method provided by the invention, ultrahigh-speed information transmission and storage of the device can be realized; an extra ultra-thin insulating layer film is not needed, the ferromagnetic material is in direct contact with the side wall of the heterojunction two-dimensional electron gas channel so as to achieve efficient spin injection, the impedance matching degree with the ferromagnetic material on the side wall is improved through the low resistivity of the two-dimensional electron gas, and meanwhile the process complexity is remarkably reduced.

The present invention relates to the technical field of solar cells, and provides a back contact cell and a preparation method thereof. By adding a certain proportion of carbon elements into the deposition of a first semiconductor layer and a mask layer, the acid and alkali corrosion resistance of the first semiconductor layer and the mask layer is improved, which is beneficial to prolonging the texturing time. At the same time, by increasing the laser etching depth, the texturing time is prolonged to form a second semiconductor opening area with a recessed velvet structure, and then local polishing is performed to flatten the tip of the tetrahedral structure to form a velvet surface with an inverted frustum-shaped structure in the second semiconductor opening area, which is beneficial to improving the passivation effect and improving the filling factor.

The invention relates to a method for preparing a digital enzyme-linked immuno sorbent assay (ELISA) micron hole array by using quartz glass as a transparent base material, which comprises the following steps of: cleaning and drying a quartz glass sheet, and performing surface treatment by using oxygen plasma; growing a layer of chromium film on the surface of the treated quartz glass sheet substrate; further coating a layer of positive photoresist on the chromium film; a mask plate with an array pattern is used for carrying out photoetching on the substrate; soaking the sample in an ammonium ceric nitrate solution to etch the chromium film, and cleaning with deionized water after etching; and performing reactive ion etching on the cleaned sample. And the obtained micron hole array can be lighted from the back surface and the side surface of the array, so that the filling condition of the microspheres in the micron holes can be observed, and the multidirectional requirements of different observation conditions can be met. The preparation method disclosed by the invention is simple, and the obtained micron holes are high in precision, free of edge effect and consistent in etching depth.

This disclosure provides a light-emitting diode (LED) and its fabrication method, a light-emitting panel, and a display device. The LED includes: a first semiconductor layer; a plurality of columnar structures separated from each other and located on one side of the first semiconductor layer, each columnar structure including at least an active layer, a second semiconductor layer, and an auxiliary electrode layer stacked sequentially, with trenches between adjacent columnar structures; a dielectric layer located between any two columnar structures, the distance between the surface of the dielectric layer facing away from the first semiconductor layer and the first semiconductor layer being greater than the distance between the surface of the active layer facing away from the first semiconductor layer and the first semiconductor layer; a first electrode located on the side of the dielectric layer and columnar structures facing away from the first semiconductor layer, the auxiliary electrode layers in each columnar structure being coupled to each other through the first electrode; and a second electrode coupled to the first semiconductor layer. This disclosure avoids short circuits in the active layers of different columnar structures, improving product yield.