38results about How to "Increase etch depth" patented technology

The metal grating template making process includes photoetching comprising homogenizing photoresist, exposure, developing and other steps to form photoresist grating pattern; electrolytic etching via setting metal workpiece as positive electrode inside the electrolyte with the grating pattern side set opposite to the negative electrode to etch out the exposed the grating pattern to form grooves while protecting the photoresist masked metal surface; and taking out the metal template after reaching the required etching depth, eliminating photoresist and cleaning to obtain the metal grating template. The metal grating template making process of the present invention is simple, low in cost and fast, and etched pattern is smooth and precise.

A femtosecond pulse compression device comprises a first grating and a second grating which are arranged in parallel, one surfaces of the two gratings which are provided with grating fringes are arranged on the inner side of the gratings, and the first grating and the second grating with the same structure are all sub-wavelength deep etching transmission gratings whose periodic times are d, the second grating is arranged on the second direction of the diffraction order of the transmission negative first order of the first grating, femtosecond laser pulse which needs to be compressed is incident to the first grating in a Bragg angle theta and meet the grating equation, sin theta= lambda0/2d, wherein theta is an incident angle, lambda0 is a center wavelength of the femtosecond laser pulse. The invention utilizes the sub-wavelength deep etching transmission gratings to constitute the femtosecond pulse compression device which has the advantages of compact structure and high efficiency.

The invention discloses a transmission type metal raster, which comprises the following parts: metal base plate, raster bright fringe and raster dark fringe, wherein the raster bright fringe is the gap of metal base plate with 100 percent light transmittance ratio; the dark fringe is metal base plate itself without light transmission; the metal base plate is stainless steel, copper and aluminum film or metal ruler. The transmission type metal raster making method comprises the following steps: washing the metal base plate surface; coating even thickness photoresist on two sides of base plate; removing the dilute agent of photoresist by drying; placing the base plate in two same raster motherboards to align then exposing; developing through the developing liquid; corroding the toast hard film in the FeCl3 liquid; removing the photoresist; cleaning the base plate surface.

The invention provides a method for preparing a mask layer of a III family compound substrate. The method comprises the following steps of depositing a photoresist, namely depositing the photoresist on the surface of an epitaxial layer of a gallium compound; exposing the photoresist; developing the photoresist, namely developing the exposed photoresist; evaporating the mask layer, namely evaporating at least one isolation layer on the surface of the photoresist and on the surface, uncovered by the photoresist, of the epitaxial layer of the gallium compound, and evaporating at least one metal layer on the surface of the isolation layer, wherein the isolation layer is made of a material capable of preventing a metal material of the metal layer from spreading to the epitaxial layer of the gallium compound, and the metal layer is made of a material capable of improving an etching selection ratio of the mask layer to the epitaxial layer of the gallium compound; peeling the photoresist, namely peeling the photoresist and the isolation layer and the metal layer on the photoresist. According to the method for preparing the mask layer of the III family compound substrate, the etching selection ratio of the mask layer to the epitaxial layer of the gallium compound is improved on the premise of not damaging the surface of the epitaxial layer of the gallium compound.

The invention provides a surface plasma ultra-diffraction photoetching method based on a tip-insulator-metal (TIM) structure. The surface plasma ultra-diffraction photoetching method is characterized in that a TIM resonant cavity structure is formed by tip-insulator-metal, a light is emitted in a substrate containing the resonant cavity in a normal incidence manner, a probe tip of a probe stimulates local surface plasmas (LSP), the waves of the stimulated local surface plasmas are reflected and coupled by a metal reflection layer in a downward attenuation propagation process and reflected for multiple times to cause resonance and form relatively-uniformly-distributed regular circular light spot modes in a longitudinal distribution manner in a medium recording layer clamped between a metal reflection layer and the probe. According to the surface plasma ultra-diffraction photoetching method based on the tip-insulator-metal structure, the problem that the write-through photoetching depth of a conventional probe is shallow is solved, the sizes of the light spots (full width at half maximum, FWHM) at different depths of the medium recording layer are identical, and the energies are uniform. According to the surface plasma ultra-diffraction photoetching method, the quality of the light spot photoetched by the conventional write-through probe is greatly improved; the structure adopted by the method is simple; and the photoetching line width can be greatly reduced.

An anisotropic etching method and apparatus is disclosed, by which the anisotropic etching of a wafer surface can be stably performed, the generation of mu pyramids generated on the etched surface of a semiconductor wafer can be reduced, and the etching depth can be uniform. Therefore, during the anisotropic etching, a replenishing etchant which compensates for the evaporation of a component from the surface of the anisotropic etchant is continuously supplied by an amount corresponding to the amount of the component evaporated. An anisotropic etching apparatus is also disclosed, by which the etchant is not contaminated, the evaporated component of the etchant does not catch fire, the composition of the etchant does not change and the characteristics of the anisotropic etching are stabilized, the generation of mu pyramids can be suppressed, and the etching depth is uniform over the wafer surface. In the apparatus, when a circulating pump is operated, a heating medium in a heating medium jacket is drawn into a heating medium circulating passage, and then is heated by a heating device in the middle of the passage and returned to the jacket. The anisotropic etchant in the anisotropic etching vessel is heated by the heat of the returned heating medium.

The invention relates to a hyperbranched polyester micro-optical photoresist, comprising a hyperbranched alkali-soluble photopolymer, an active diluent, a cross-linking agent, a photoinitiator, an auxiliary agent and the like. The photosensitive property, the corrosion performance, the linear range and the like of the hyperbranched polyester micro-optical photoresist can be adjusted through the hyperbranched polymer structure, the functional group at the tail end of the hyperbranched polymer molecule and the formula of the photoresist. The photoresist has easy preparation and great physicochemical property adjustability, and can be developed with aqueous developer, thereby having little influence to the environment in use. In addition, the photoresist has high light sensitivity and image definition, great corrosion depth and unique linear corrosion performance, and is especially suitable for photoetching process of micro-optical elements.

The invention discloses a fishing net thread use quality improvement processing process. The process includes steps: (1) cleaning and deoiling treatment; (2) phosphoric acid solution soaking treatment; (3) treating fluid A soaking treatment; (4) ultraviolet irradiation treatment; (5) treating fluid B soaking treatment; (6) flushing and drying treatment. By special processing of fishing net threads, under joint actions in each step, the grafting effect of the fishing net threads is evidently improved, utilization characteristics of the fishing net threads are improved, and the finally treaded fishing net threads are high in coating compatibility, corrosion resistance, strength and comprehensive quality, thereby being high in popularization and utilization value.

The invention relates to a deep silicon etching method based on SOG wafers. The method comprises the steps of providing a SOG wafer and placing the SOG wafer on a flat plate; forming a hard mask layeron the silicon structure layer of the SOG wafer; forming a photo-resist layer on the hard mask layer, exposing and developing to expose one part of the hard mask layer; etching the exposed part of the hard mask layer to expose one part of the silicon structure layer; and subjecting the exposed part of the silicon structure layer to deep-induction coupling plasma dry etching in a chamber. The deep-induction coupling plasma dry etching comprises a first etching stage and a second etching stage. The first etching stage comprises a first passivation step, a first pre-etching step and a first etching step, wherein the first passivation step, the first pre-etching step and the first etching step are carried out circularly. The second etching stage comprises a second passivation step, a second pre-etching step and a second etching step, wherein the second passivation step, the second pre-etching step and the second etching step are carried out circularly. The pressure in the first etching step and the pressure in the second etching step are respectively 30 mTorr to 40 mTorr. The etching time and the radio frequency power at the flat plate in the first etching step and the second etchingstep are gradually increased along with the increase of the cycle period.

The invention provides a deep silicon etching method for an MEMS, and belongs to the technical field of deep silicon etching. According to the technical scheme, the deep silicon etching method of theMEMS comprises a deposition step, a cleaning step, an etching step, a purging step, a repeated deposition step, a repeated cleaning step, a repeated etching step and a repeated purging step, and is characterized in that side circulation is carried out through the deposition step, the cleaning step, the etching step and the purging step for multiple times, and a sample is vacuumized. The beneficialeffects of the deep silicon etching method are as follows: the deep silicon etching method disclosed by the invention can be applied to a large-scale integrated circuit industrial manufacturing environment; particularly, the integrity of sensing elements can be kept during long-time etching, the device design requirement can be met, the purging step is added, the temperature of the vacuum reaction chamber and the temperature of the sample table can be reduced, the vacuum reaction chamber is kept within a constant range, and the uniformity of large-size samples after being etched and the roughness of the side wall of the MEMS device can be easily provided.

The invention is for a making method for a kind of shield of plasma plane display of discharge type in opposite direction. The method is to take advantage of the etching process to etch respectively many obstructing walls that are parallel each other and with equidistant spacing on one side surface of one metal plate along the vertical and horizontal direction, and each four neighboring obstructing walls encloses a discharge unit, and a shading hole is etched in the center of each discharge unit whilst that runs through the metal plate; on the other side surface of the metal plate, at least a groove is made that puts through with the shading hole on the position of the relevant discharge unit by taking advantage of the rolling or punch process, and the neighboring grooves put through each other so as to form many air guide ditch on the other side surface. Thus, a shield that is necessary to the plasma plane display of discharge type in opposite direction is made simply and quickly, which can not only reduce the problems of the chemical pollutions caused by the traditional etching on both sides, but also improve the conformability rate of product as well as reduce the fabrication cost.

The invention discloses a semiconductor device, and the device comprises a plurality of fins which extend in a first direction, a grid electrode which extends in a second direction and is across all the fins, source and drain regions which are located on fins at two sides of the grid electrode, and a grid electrode side wall. Each fin consists of a buffering layer and a trench layer made of high-migration-rate materials, and the buffering layers enclose the side and bottom surfaces of the trench layers. According to the invention, the device can locally form a high carrier mobility trench in a self-alignment manner on a needed fin structure through removing false grid stacking and increasing an etching depth and a lateral width, thereby effectively improving the carrier mobility of a fin trench region, and effectively improving the performance and reliability of the device.

The present invention is to provide a method for making a shadow mask for an opposed discharge plasma display panel by etching one lateral surface of a metal slab to produce a plurality of parallel and equidistant barrier ribs along the vertical and horizontal directions on the lateral surface and a discharging cell by enclosing every four adjacent barrier ribs. A shadow hole is formed at the middle of each discharging cell and etched through the metal slab, and at least one groove interconnected to the shadow holes is produced on another lateral surface of the metal slab by utilizing a rolling process or a stamping process. The adjacent grooves are interconnected with each other, and a plurality of air guide channels is formed on another lateral side, such that a shadow mask can be made in a simple and fast manner, chemical pollutions caused by a traditional double-sided etching can be minimized, and the product yield rate and the manufacturing cost can be effectively improved and lowered.

The present invention provides a substrate etching method. The method is configured to etch a deep hole at the surface to be etched of a silicon dioxide substrate, and comprises the following steps: an etching step: employing the fluorine-containing gas which has an etching product being gas as the main etching gas and employing the inert gas as auxiliary gas to perform anisotropic etching so as to increase the etching depth; a deposition step: employing the fluorocarbon gas as the deposition gas to respectively deposit one layer of polymer at the side wall of the deep hole and the bottom of the deep hole; and circulation of the two steps mentioned above until reaching the required total etching depth. The substrate etching method allows the etching of the deep hole to be performed at the consistent temperature so as to avoid the prolonging of the whole etching time caused by the temperature difference, improve the average etching rate and fit the technology volume production.

The invention discloses a method for preparing a 2.5 D micro-nano structure through gray exposure, and belongs to the technical field of microstructures in semiconducting science. The method comprises the steps of: dividing the height of the 2.5 D micro-nano structure into 2N levels, establishing corresponding N binary exposure layouts, wherein N is larger than I; acquiring a union set of the N binary exposure layouts, and establishing an additional compensation layout; carrying out N+1 times of layered exposure after spin-coating photoresist on the silicon wafer to obtain a photoresist layer containing 2N heights; and using the photoresist layer as a mask to perform dry etching to prepare a nanoimprint template, and realizing batch production through soft film thermocuring nanoimprint and secondary transfer printing of ultraviolet curing nanoimprint. The nanoimprint template is high in pattern precision and has 2N different heights, and the micro-nano structure prepared through soft film transfer printing, nanoimprint and dry etching is high in efficiency, high in yield and accurate in size.