3results about How to "Increase etch depth" patented technology

The present invention relates to the technical field of solar cells, and provides a back contact cell and a preparation method thereof. By adding a certain proportion of carbon elements into the deposition of a first semiconductor layer and a mask layer, the acid and alkali corrosion resistance of the first semiconductor layer and the mask layer is improved, which is beneficial to prolonging the texturing time. At the same time, by increasing the laser etching depth, the texturing time is prolonged to form a second semiconductor opening area with a recessed velvet structure, and then local polishing is performed to flatten the tip of the tetrahedral structure to form a velvet surface with an inverted frustum-shaped structure in the second semiconductor opening area, which is beneficial to improving the passivation effect and improving the filling factor.

The invention relates to a method for preparing a digital enzyme-linked immuno sorbent assay (ELISA) micron hole array by using quartz glass as a transparent base material, which comprises the following steps of: cleaning and drying a quartz glass sheet, and performing surface treatment by using oxygen plasma; growing a layer of chromium film on the surface of the treated quartz glass sheet substrate; further coating a layer of positive photoresist on the chromium film; a mask plate with an array pattern is used for carrying out photoetching on the substrate; soaking the sample in an ammonium ceric nitrate solution to etch the chromium film, and cleaning with deionized water after etching; and performing reactive ion etching on the cleaned sample. And the obtained micron hole array can be lighted from the back surface and the side surface of the array, so that the filling condition of the microspheres in the micron holes can be observed, and the multidirectional requirements of different observation conditions can be met. The preparation method disclosed by the invention is simple, and the obtained micron holes are high in precision, free of edge effect and consistent in etching depth.

This disclosure provides a light-emitting diode (LED) and its fabrication method, a light-emitting panel, and a display device. The LED includes: a first semiconductor layer; a plurality of columnar structures separated from each other and located on one side of the first semiconductor layer, each columnar structure including at least an active layer, a second semiconductor layer, and an auxiliary electrode layer stacked sequentially, with trenches between adjacent columnar structures; a dielectric layer located between any two columnar structures, the distance between the surface of the dielectric layer facing away from the first semiconductor layer and the first semiconductor layer being greater than the distance between the surface of the active layer facing away from the first semiconductor layer and the first semiconductor layer; a first electrode located on the side of the dielectric layer and columnar structures facing away from the first semiconductor layer, the auxiliary electrode layers in each columnar structure being coupled to each other through the first electrode; and a second electrode coupled to the first semiconductor layer. This disclosure avoids short circuits in the active layers of different columnar structures, improving product yield.