Hyperbranched polyester micro-optical photoresist

A technology of hyperbranched polyester and hyperbranched polymer, applied in the field of photoresist, can solve the problems of uneven photoresist etching section, unsuitable microfabrication, difficult surface shape control, etc., and achieve unique linear etching Performance, the effect of reduced structural divergence, low viscosity

Inactive Publication Date: 2010-08-11
ZHANJIANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For resists used in micro-electromechanical systems, resolution is not the key point, but deep etching and high aspect ratio performance are important indicators. At present, such resists used in the world are developed with organic solvents and have good mechanical properties. It can be directly used to make micro-components. The disadvantage is that the etching depth of this type of resist is limited after exposure and development. It is not suitable for micro-processing on the original substrate for many patterns made by photolithography.
[0003] At present, the matrix resins of resists used in the manufacture of MEMS and micro-optical components are mainly linear or low-branched polymers. The molecular structure of linear polymers is characterized by the fact that the macromolecule has only two chain ends and a The chain entanglement between the chains, the influence of the chain end group decreases with the increase of the molecular weight, the chain entanglement endows the toughness, creep, impact resistance and rheological properties of the polymer material to a certain extent, and the linear polymer Molecular chain entanglement will lead to irregular etched sections of photoresist during the development process, which will cause difficulty in surface shape control in continuous deep-relief micro-optical element processing

Method used

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  • Hyperbranched polyester micro-optical photoresist
  • Hyperbranched polyester micro-optical photoresist
  • Hyperbranched polyester micro-optical photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Raw materials and ratio:

[0032] Inositol 9~30g

[0033]Succinic anhydride 30~300g

[0034] Tetrabutylammonium bromide 0.06~0.56g

[0035] N,N-Dimethylformamide 17~167g

[0036] Preparation Process:

[0037] Add inositol, succinic anhydride, tetrabutylammonium bromide, N,N-dimethylformamide into a four-neck flask, under nitrogen protection, heat up to 110±5°C, keep warm until the acid value is constant, then add 27.76-277.56g of epichlorohydrin, react at 110±5°C until the acid value is constant, then add 57.6-576g of trimellitic anhydride, react at 110±5°C until the acid value is constant. Add 55.51~555.12g of epichlorohydrin, react at 110±5°C until the acid value is constant, then add 115.2~1152g of trimellitic anhydride, react at 110±5°C until the acid value is constant, add 51.12~511.2g of glycidyl methacrylate, 90 React at ±5°C until the acid value is constant to obtain a hyperbranched alkali-soluble photopolymer. Figure 1 The results of the infrared spectru...

Embodiment 2

[0039] Raw materials and ratio:

[0040] Ethylene glycol 6.2~62.0g

[0041] Trimellitic anhydride 38.4~384g

[0042] Tetrabutylammonium bromide 0.113~0.892g

[0043] N,N-Dimethylformamide 17~167g

[0044] Preparation Process:

[0045] Add ethylene glycol, trimellitic anhydride, tetrabutylammonium bromide, and N,N-dimethylformamide into a four-necked flask. Under nitrogen protection, heat up to 110±5°C, keep warm until the acid value is constant, and then add 37.01 ~370.1g epichlorohydrin, react at 110±5°C until the acid value is constant, then add 40~400g succinic anhydride, react at 110±5°C until the acid value is constant. Add 37.01~370.1g of epichlorohydrin, react at 110±5℃ until the acid value is constant, add 76.8~768g of trimellitic anhydride, react at 110±5℃ until the acid value is constant, add 74.01~740.2g of epichlorohydrin, 110±5 °C until the acid value is constant, add 153.6-1536g of trimellitic anhydride, and react at 110±5°C until the acid value is constant....

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Abstract

The invention relates to a hyperbranched polyester micro-optical photoresist, comprising a hyperbranched alkali-soluble photopolymer, an active diluent, a cross-linking agent, a photoinitiator, an auxiliary agent and the like. The photosensitive property, the corrosion performance, the linear range and the like of the hyperbranched polyester micro-optical photoresist can be adjusted through the hyperbranched polymer structure, the functional group at the tail end of the hyperbranched polymer molecule and the formula of the photoresist. The photoresist has easy preparation and great physicochemical property adjustability, and can be developed with aqueous developer, thereby having little influence to the environment in use. In addition, the photoresist has high light sensitivity and image definition, great corrosion depth and unique linear corrosion performance, and is especially suitable for photoetching process of micro-optical elements.

Description

technical field [0001] The invention relates to a photoresist for processing micro-optical elements, in particular to a negative photoresist with good film-forming property, high resolution, wide linear photolithography range, easy control of surface shape and repeatable etching. Background technique [0002] Photoresist is a fine functional material that uses the difference in solubility before and after photoreaction to make and transfer graphics. Positive resists are suitable for high-resolution applications, such as chip circuits, etc.; negative resists are suitable for deep etching, such as the production of micro-electromechanical systems, micro-optical components, optical disc masters, and printed circuit boards. MEMS integrates multiple physical or chemical control methods, and is manufactured by photolithography processing methods similar to integrated circuits. Recently, micro-electro-mechanical systems have entered applications from research, such as gene chips, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/038
Inventor 冯宗财
Owner ZHANJIANG NORMAL UNIV
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