Memory and manufacturing method thereof

Abstract

The present invention discloses a memory and a manufacturing method thereof. A memory element comprises a first insulating layer, a second insulating layer, an isolation layer, a floating gate electrode, a control gate electrode, a channel layer and a tunneling oxide layer. The second insulating layer is adjacent to and parallel with the first insulating layer and defines an interlayer space with the first insulating layer, the isolation layer is located in the interlayer space, and the included angle of the isolation layer and the first insulating layer is a non-flat angle. The interlayer space is isolated into a first concave chamber and a second concave chamber, the floating gate electrode is located in the first concave chamber, and the control gate electrode is located in the second concave chamber. The channel layer is located at the outer side of the opening of the first concave chamber, the included angle of the channel layer and the first insulating layer is a non-flat angle, and the tunneling oxide layer is located between the channel layer and the floating gate electrode.

Description

technical field [0001] The invention relates to a non-volatile memory (Non-Volatile Memory, NVM) component and a manufacturing method thereof. In particular, it relates to a vertical channel memory element and a manufacturing method thereof. Background technique [0002] The non-volatile memory device has the characteristic that the data stored in the device will not disappear due to the interruption of the power supply, and thus it is one of the memory devices commonly used to store data at present. Flash memory is a typical non-volatile memory element. The memory cell of the flash memory device includes a charge storage structure, such as a floating gate (floating gate) or a charge trapping layer (dielectric charge trapping layer), which stores data in the flash memory by controlling the amount of charge stored in the charge storage structure in the storage unit of the element. The amount of stored charge sets a threshold voltage for the memory cells in the flash memory...

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Problems solved by technology

[0005] However, since the material properties of the insulating layer and the polysilicon layer are quite different, the through opening formed by the etching process often has an etching profile with a wide top and a narrow bottom, and the etching depth is insufficient, which not only greatly Reducing the process window of subsequent processes also limits the overall memory density of memory elements

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