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Preparation method of holographic grating photoresist patterns with multiple shapes and narrow line widths of hundreds of nanometers

A holographic grating and photoresist technology, which is applied in microlithography exposure equipment, photoengraving process of pattern surface, diffraction grating, etc. effect of duration

Active Publication Date: 2011-12-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Even if it is a 2-stage grating, its period is very small, and it cannot be obtained by ordinary lithography using a general lithography machine. However, a rectangular-period grating can be prepared by electron beam exposure, and a first-stage grating can also be prepared. , the bar width of the grating can be achieved below 50nm, but the exposure time of the electron beam is longer and the cost is higher, while the holographic exposure has the characteristics of low cost and a large area of ​​uniform exposure. In the production of periodic gratings, Advantages over e-beam

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  • Preparation method of holographic grating photoresist patterns with multiple shapes and narrow line widths of hundreds of nanometers
  • Preparation method of holographic grating photoresist patterns with multiple shapes and narrow line widths of hundreds of nanometers
  • Preparation method of holographic grating photoresist patterns with multiple shapes and narrow line widths of hundreds of nanometers

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0041] Such as figure 1 as shown, figure 1 It is a flow chart of a method for preparing a holographic grating photoresist pattern with a narrow line width of a hundred nanometers and various shapes provided by the present invention, and the method includes:

[0042] Step 1: Dilute the photoresist according to different proportions, and shake the glue on the cleaned substrate to obtain photoresist layers with thicknesses of 70nm, 110nm, 160nm, 240nm and 290nm;

[0043] Step 2: Use a 325nm holographic exposure system to expose photoresist layers with different thicknesses in corresponding doses;

[0044] Step 3: developing and fixing the exposed sample to obtain the corresponding photoresist grating pattern;

[0045] Ste...

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Abstract

The invention discloses a method for preparing a holographic grating photoresist pattern with a narrow line width of 100 nanometers and various shapes. Drop glue on the bottom to obtain photoresist layers with thicknesses of 70nm, 110nm, 160nm, 240nm and 290nm respectively; Step 2: Use a 325nm holographic exposure system to expose the photoresist layers of different thicknesses with corresponding doses; Step 3 : develop and fix the exposed sample to obtain the corresponding photoresist grating topography pattern; step 4: post-bake the sample, remove the primer with a plasma degumming machine, and analyze the obtained photoresist grating The shape is modified. By using the invention, the holographic grating photoresist pattern with various shapes and narrow line widths in the order of 100 nanometers is prepared.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for preparing a photoresist pattern of a holographic grating with a narrow line width of one hundred nanometers and multiple shapes, which is mainly used for devices of distributed feedback lasers (DFB) and distributed Bragg lasers (DBR) In the manufacturing process, the grating has the function of mode selection. In addition, it can also be applied to the preparation of optoelectronic devices that require hundreds of nanoscale gratings. Background technique [0002] DFB or DBR laser has the characteristics of dynamic single longitudinal mode and narrow line width. The wavelength is 1.3μm, and the 1.55μm DFB laser is mainly used in optical fiber communication, while the 852.3nm DFB laser is used in the pumping of cesium atomic clocks. [0003] The invention is accomplished under the subject of developing a 852.3nm high-power narrow-linewidth DFB laser. Th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18G03F7/00G03F7/16G03F7/20G03F7/32G03F7/40G03F7/42
Inventor 陈熙钟源陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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