Formation method of semiconductor structure

Abstract

The invention provides a formation method of a semiconductor structure. The formation method of a semiconductor structure comprises the steps: providing a semiconductor substrate, wherein a plurality of grooves are formed in the semiconductor substrate; forming a first oxygen ambient silica layer on the surface of the side wall and the bottom of the grooves and on the surface of the semiconductor structure, wherein part of silicon atoms on the surface of the first oxygen ambient silica layer are connected with ethoxy; performing an inertia plasma processing technology to realize bond rupture between the ethyl and oxygen atoms in the ethoxy on the surface of the first oxygen ambient silica layer to form a silicon oxygen dangling bond; performing a water vapour processing technology to realize combination of the oxygen and the hydrogen in the silicon oxygen dangling bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen hydrogen bond; performing an ultraviolet processing technology to remove the protium in the silicon oxygen hydrogen bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen silicon bond; performing a second high aspect ratio deposition technology to form a second oxygen ambient silica layer on the surface of the first oxygen ambient silica layer; and removing the first oxygen ambient silica layer and the second oxygen ambient silica layer on the semiconductor substrate, and forming a shallow groove isolation structure in the grooves. The formation method of a semiconductor structure can increase the compactness of the shallow groove isolation structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] The development direction of semiconductor integrated circuits is to increase density and shrink components. In the manufacture of integrated circuits, the isolation structure is an important technology, and the components formed on the silicon substrate use the isolation structure to isolate each other. With the advancement of semiconductor manufacturing technology, shallow trench isolation (Shallow Trench Isolation, STI) technology has gradually replaced other isolation methods such as local oxidation of silicon (LOCOS) used in traditional semiconductor device manufacturing and has become a commonly used isolation structure. . [0003] With the continuous reduction of the feature size of semiconductor devices, the high aspect ratio deposition process is more and more widely used in the man...

AI Technical Summary

Problems solved by technology

[0009] However, the existing shallow trench isolation structure has the problems of low density and holes

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