Method for synthesizing p type doped silicon carbide by microwave in situ reaction

An in-situ reaction, silicon carbide technology, applied in the field of preparing p-type doped silicon carbide, can solve the problems of cumbersome and long process, and achieve the effects of environmental protection process, good preparation reproducibility and no environmental pollution

Active Publication Date: 2016-01-27
ZHANGJIAGANG DONGDA IND TECH RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, new methods such as carbothermal reduction methods, chemical vapor deposition, and combustion synthesis have been developed, but there are also shortcomings such as cumbersome and lengthy processes and the need for post-processing.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Weigh 24g of artificial graphite powder, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon at 1:1, and weigh 60g of amorphous SiO 2 powder, 28g Si powder; then determine the molar weight of the boron element of the IIIA group according to the molar ratio of the IIIA group element to the carbon element of 0.05:1, and weigh the boron carbide (B 4 C) Powder 1.38g. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a water ring pump to evacuate to 20kPa, and irradiate for 1h under a microwave power of 3.5kW. The optical thermometer shows a constant temperature of 970°C.

[0034] Using secondary ion mass spectrometry to analyze the concentration of doped boron, it was found that boron replaced the silicon site in silicon carbide, and the concentration of boron was distributed at 1.67×10 18 ~4.3×10 18 cm -3 . Using the...

Embodiment 2

[0036] Weigh 30g of pitch-based activated carbon powder, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon of 0.8:1, and weigh 75g of amorphous SiO 2 powder, 21g of Si powder; then determine the molar amount of aluminum element in the aluminum dopant according to the molar ratio of group IIIA element and carbon element of 0.05:1, and weigh 3.38g of metal aluminum powder. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a mechanical pump to evacuate to 20kPa, and irradiate for 1.5h under a microwave power of 5.0kW. The optical thermometer shows a constant temperature of 1220°C.

[0037] Using X-ray photoelectron spectroscopy (XPS) analysis, it is found that there are aluminum-carbon bonds in silicon carbide, which confirms that aluminum has entered the crystal structure of silicon carbide, and the content of Al is 1.60% to ...

Embodiment 3

[0039] Weigh 18g of coke powder, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon of 0.75:1, and weigh 30g of amorphous SiO 2 powder, 17.5g Si powder; then determine the molar weight of boron in the boron dopant by weighing the boric acid (H 3 BO 3 ) 9.27g. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a mechanical pump to evacuate to 30kPa, and irradiate for 2h under a microwave power of 4.5kW. The optical thermometer shows a constant temperature of 1270°C.

[0040] Using secondary ion mass spectrometry to analyze the concentration of doped boron, it was found that the maximum concentration of boron was 3.89×10 17 cm -3 . Using an Agilent semiconductor tester to test the conductivity of the boron-doped silicon carbide product, it was found that the minimum resistivity was 81.6Ω·cm.

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Abstract

The invention discloses a method for synthesizing p type doped silicon carbide by microwave in situ reaction. The steps include: using a group IIIA elementary substance or a compound containing the group IIIA element as the dopant, taking artificial graphite powder, activated carbon, coke or carbon fiber as the carbon source, and employing silicon powder or mixed powder of silicon powder and silicon oxide powder as the silicon source, under a vacuum condition, performing heat preservation for a period of time in a microwave irradiated electromagnetic field so as to obtain the p type doped silicon carbide. The preparation process has no need for raw material pretreatment, a subsequent annealing process or other processes, also has no need for a catalyst, a template and a substrate, etc., and has the characteristics of rapidity, simplicity, high efficiency and good reproducibility. In addition, because of the fast heating speed, uniform heating, small thermal inertia, short production cycle and other advantages unique to microwave irradiation treatment technology itself, the preparation cost is further reduced.

Description

technical field [0001] The invention relates to a method for preparing p-type doped silicon carbide, in particular to a method for synthesizing p-type doped silicon carbide by microwave in-situ reaction. Background technique [0002] Silicon carbide (SiC) has a high band gap and critical breakdown electric field, small dielectric constant and high electron saturation mobility, as well as strong radiation resistance, good mechanical properties, high breakdown field strength, and high thermal conductivity. , high saturation electron drift velocity, and high bonding energy and other characteristics, can be widely used in transistors, sensors, etc., and its excellent performance can meet the requirements of modern electronic technology for high temperature, high frequency, high power, high voltage, radiation resistance and optoelectronic integrated devices Require. Therefore, as the most mature wide-bandgap semiconductor material at present, silicon carbide (SiC) is regarded as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 王继刚周清张浩
Owner ZHANGJIAGANG DONGDA IND TECH RES INST
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