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High-performance pucherite photo-anode film and preparation method thereof

A bismuth vanadate and photoanode technology, which is applied in chemical instruments and methods, electrodes, vanadium compounds, etc., can solve the problems of low charge mobility, slow charge separation/transport, poor oxidation kinetics, etc., and achieve high crystal quality, Good photocatalytic performance and simple method

Inactive Publication Date: 2019-03-08
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned bismuth vanadate photoanode films are basically undoped or single-doped structures, and bismuth vanadate still has some disadvantages, such as slow charge separation / transport, low charge mobility, poor oxidation kinetics Wait

Method used

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  • High-performance pucherite photo-anode film and preparation method thereof
  • High-performance pucherite photo-anode film and preparation method thereof
  • High-performance pucherite photo-anode film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Such as figure 1 As shown, a bismuth vanadate photoanode film, the film structure includes a light absorbing layer, the upper surface of the light absorbing layer is provided with an oxygen evolution catalyst layer, the lower surface of the light absorbing layer is provided with a substrate, the The light absorbing layer is a gradient molybdenum-doped bismuth vanadate thin film, the oxygen evolution catalyst layer is an iron-doped NiO ultra-thin nanosheet, and the substrate is FTO conductive glass. The gradient molybdenum-doped bismuth vanadate thin film is doped with high concentration molybdenum on the surface. The doping concentration of the gradient molybdenum-doped bismuth vanadate thin film is 5% molar ratio.

[0046] The preparation steps of undoped bismuth vanadate thin film are as follows:

[0047] 1) Sputter a bismuth thin film on a dry, clean FTO conductive glass substrate with a length and width of 1 cm × 2 cm using a high vacuum ion sputtering apparatus; ...

Embodiment 2

[0051] Similar to Example 1, a metal bismuth film was deposited by sputtering, and 50 microliters of vanadyl acetylacetonate and molybdenum diacetylacetonate oxide in a ratio of 19 / 1 were uniformly coated on the DMSO solution with a molar ratio of 0.5 mol / liter. , through the same drying, heat treatment, soaking, cleaning, drying and other processes as in Example 1, a uniform molybdenum-doped bismuth vanadate film was obtained. Its optical photo is attached figure 2 Medium No. 2 film. Figure 5 It is a uniform molybdenum-doped bismuth vanadate thin film, and all XRD diffraction peaks can be assigned to BiVO 4 phase with F-doped SnO 2 substrate. Figure 13 Example 2 is the performance curve of the photoanodized water prepared by this sample.

Embodiment 3

[0053] Gradient molybdenum-doped bismuth vanadate thin film preparation steps: On the undoped bismuth vanadate thin film obtained in Example 1, drop 50 microliters of vanadyl acetylacetonate and molybdenum diacetylacetonate with a ratio of 19 / 1. DMSO solution with a molar ratio of 0.5 mol / L; dried in an oven at 80-100°C and then placed in a muffle furnace at a rate of 2°C / min to first raise the temperature to 450°C and then to 500°C and keep the temperature at 500°C for 2 hours; After natural cooling, the obtained brown film is soaked in 1 mol / L NaOH solution for 20-30 minutes, washed with distilled water to remove impurity ions, and dried to obtain a gradient molybdenum-doped bismuth vanadate film. Its optical photo is attached figure 2 Medium No. 3 film.

[0054] Image 6 For gradient molybdenum-doped bismuth vanadate thin films, all XRD diffraction peaks can be attributed to BiVO 4 phase with F-doped SnO 2 substrate. Figure 7 The sample characteristic Raman signals (...

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Abstract

The invention provides a high-performance pucherite photo-anode film and a preparation method thereof. The high-performance pucherite photo-anode film is composed of gradient molybdenum doped pucherite film light absorption layer and a Fe doped NiO ultrathin sheet catalyst on the surface of the gradient molybdenum doped pucherite film light absorption layer. The preparation method comprises the following steps: 1, depositing a bismuth film on an FTO conductive glass substrate; 2, enabling the bismuth film and vanadyl acetylacetonate to react at 450 DEG C to obtain undoped pucherite film; 3, adopting vanadyl acetylacetonate and molybdenyl acetylacetonate to cary out doping treatment on the pucherite film to obtain the gradient molybdenum doped pucherite film; and 4, spin coating Fe doped Ni(OH)2 ultrathin sheet on the molybdenum doped pucherite film to obtain the pucherite photo-anode film loaded with Fe doped NiO catalyst through thermal treatment. The preparation method is simple, convenient and environment-friendly; the prepared pucherite photo-anode film effectively promotes charge separation and transmission and has high visible light absoprtion performance and photoelectricitywater decomposition performance.

Description

technical field [0001] The invention relates to the technical field of manufacturing inorganic non-metallic materials, in particular to a bismuth vanadate photoanode film. Background technique [0002] The global energy crisis and environmental pollution are a great challenge to sustainable development. With the development of science and technology, the technology of using solar photoelectric water splitting to produce hydrogen is expected to become an important technical means to solve these problems. There are many materials that can be selected for photoelectric water splitting to produce hydrogen, such as common semiconductor metal oxides, nitrides or sulfides. Under the irradiation of visible light, semiconductors can excite and separate charges, and further undergo redox reactions to produce hydrogen. Bismuth vanadate (BiVO 4 ) as a good visible light responsive material, it has the advantages of non-toxicity, low cost, suitable band gap (2.4eV), stable properties,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B11/06
CPCB01J23/8877B01J35/0033C01G31/00C01G53/04C01P2002/72C01P2002/82C01P2002/84C01P2002/85C01P2004/01C01P2004/03C25B1/04C25B1/55C25B11/091Y02E60/36
Inventor 杨晓刚李磊杨中正谷龙艳李品将雷岩李知声王之俊郑直
Owner XUCHANG UNIV
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