Photoelectric detector for paper-based material and solution method for preparing photoelectric detector

A photodetector and solution method technology, which is applied to the authenticity inspection of banknotes, instruments, circuits, etc., can solve the problems of complicated preparation process and high equipment cost, and achieve the effects of simple process, high sensitivity and low preparation cost.

Inactive Publication Date: 2020-09-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The current preparation of photodetectors mainly relies on the vacuum method, which has limitations such as high equipment costs, complicated preparation processes, and the need for high vacuum conditions.

Method used

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  • Photoelectric detector for paper-based material and solution method for preparing photoelectric detector
  • Photoelectric detector for paper-based material and solution method for preparing photoelectric detector
  • Photoelectric detector for paper-based material and solution method for preparing photoelectric detector

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Embodiment 1

[0036] Based on SnO 2 :10at.%Si / SnO 2 : 10at.% Ga homojunction structure of the near-ultraviolet photodetector preparation process is as follows:

[0037] (1), take appropriate amount of SnCl respectively 2 2H 2 O and tetraethyl silicate (TEOS), gallium nitrate hydrate (Ga(NO 3 ) 3 ·xH 2 O) Dissolved in absolute ethanol, SnO with a tin concentration of 0.5mol / L, a silicon doping ratio of 10at.%, and a gallium doping concentration of 10at.%. 2 : Si, SnO 2 : Ga precursor solution, the solution is sealed and placed in a magnetic stirrer to fully stir for 48h to make it even for later use. Filter the solution with a 0.22 μm caliber organic needle filter to remove insoluble particles and avoid the formation of particulate impurities. Then the solution was sonicated for 10 min to remove air bubbles for later use.

[0038] (2) Treat the clean ITO substrate plasma for 10 minutes with a power of 120W. Take 50uLSnO 2 : Ga solution is dropped on the substrate, and the film is ...

Embodiment 2

[0042]Based on SnO 2 :15at.%Si / SnO 2 : 10at.% Ga homojunction structure of the near-ultraviolet photodetector preparation process is as follows:

[0043] (1), take appropriate amount of SnCl respectively 2 2H 2 O and tetraethyl silicate (TEOS), gallium nitrate hydrate (Ga(NO 3 ) 3 ·xH 2 O) Dissolved in absolute ethanol, SnO with a tin concentration of 0.5mol / L, a silicon doping ratio of 15at.%, and a gallium doping concentration of 10at.% 2 : Si, SnO 2 : Ga precursor solution, the solution is sealed and placed in a magnetic stirrer to fully stir for 48h to make it even for later use. Filter the solution with a 0.22 μm caliber organic needle filter to remove insoluble particles and avoid the formation of particulate impurities. Then the solution was sonicated for 10 min to remove air bubbles for later use.

[0044] (2) Treat the clean ITO substrate plasma for 10 minutes with a power of 120W. Take 50uLSnO 2 : Ga solution is dropped on the substrate, and the film is fo...

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Abstract

The invention discloses a photoelectric detector for a paper-based material and a solution method for preparing the photoelectric detector. The near ultraviolet light detector based on the SnO2: Si/SnO2: Ga homojunction structure is prepared through a solution method. The prepared SnO2: Si thin film and SnO2: Ga thin film both show a strong absorption effect on near ultraviolet light concentratednear 410 nm. When the detector is converted from a dark environment to a near ultraviolet irradiation environment, the current of the detector is greatly converted, the current is increased by two orders of magnitudes, and excellent near ultraviolet sensitivity is shown. Meanwhile, tests find that the detector has weak response to red light concentrated near 630 nm and yellow light distributed at550-700 nm, the response current can be ignored compared with the current under purple light irradiation, and the detector shows good anti-interference performance. The method has advantages and potential in application of photoelectric detectors (money counters and the like) made of paper-based materials.

Description

technical field [0001] The invention relates to the technical field of printed electronics, in particular to a photodetector used for paper-based materials and its solution method preparation. Background technique [0002] In modern life, with the increasing amount of financial transactions, the authenticity identification of paper-based materials (banknotes and printed documents) is particularly important, and different photodetectors (money counters, etc.) are widely used in many trading places. It is necessary to develop low-cost, high-accuracy and environment-friendly photodetection technology. [0003] In the prior art, the common paper-based material photoelectric detection technology (for example: banknote counter) includes: according to the real banknotes, it is made of special fiber paper, which is close to complete absorption of near ultraviolet light (no reflection); counterfeit money is made of conventional fiber paper, There is no absorption (reflection) for ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/103G07D7/128
CPCG07D7/128H01L31/0324H01L31/0325H01L31/1037H01L31/18Y02P70/50
Inventor 宁洪龙张旭姚日晖周尚雄史沐杨梁志豪陈俊龙符晓张观广彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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