32 results about "Gallium doping" patented technology

The invention discloses a method for controlling the specific resistance of gallium-doping Czochralski silicon in the crystal growth process, which comprises the following steps: melting multi-crystalsilicon in vacuum or under the protection of argon, melting gallium in the silicon solution to form a gallium-doping silicon solution, and growing the single crystal of the Czochralski silicon; in the crystal growth process, when the specific resistance of the crystal is 1.2-1.0 omega cm, doping the n type dopant-phosphorus with certain concentration in the residual gallium-doping silicon solution to form a phosphorus and gallium-doped silicon solution for continuously growing, and enabling the specific resistance of the crystal to be regulated to 3.0 omega cm again; and when the curing ratioof the crystal reaches 80-90%, stopping the growth. The phosphorus doping process in the residual gallium-doped silicon solution can be carried out many times. The invention can control the specificresistance of the back half part of the single crystal of the gallium-doped Czochralski silicon in the range of 1-3 omega cm to be favorable for increasing the utilization ratio of silicon materials in the process of preparing high-efficiency solar batteries, thus the manufacturing cost of the high-efficiency batteries is greatly reduced, and the method has simple operation and can be easily applied to the photovoltaic industry in a large scale.

The invention discloses a gallium doping device, comprising a flying ring (2), a ring-shaped fixed sleeve (3) and a hollow cone (4), wherein the flying ring (2) is made of high-purity quartz, the hollow cone (4) is made of high-purity monocrystalline silicon, the ring-shaped fixed sleeve (3) is connected with the hollow cone (14), one end of the flying ring (2) is connected with the ring-shaped fixed sleeve (3), the other end of the flying ring (2) is connected with a handle part (1), and the handle part (1) is provided with a groove (11) which is matched with a crystal seed chuck on a crystal seed rod. The invention also discloses a doping method of gallium of Czochralski silicon monocrystalline through the gallium doping device. The invention can effectively avoid the poor influence on crystal growing caused by the splash of silicon melt.

The invention is concerned with the gallium doping Ga3Sb8Te1 phase change memorizer unit and its making method, belongs to the micro-electronics technique field, it includes: the silicon underlay, the up and down electrode, the heating layer, and the insulating medium layer, the phase change material is the Ga3Sb8Te1, as the sulfur system compound. It is: forming the down electrode by depositing the layer of the down electrode material on the silicon underlay; applying the nanometer coining photolithography and the dry etching technique chisels the small hole on the center of the first insulating medium layer which depositing on the down electrode material; filling up the small hole with the heating layer depositing and conducting the chemical-mechanical polishing; depositing the second insulating medium on the heating layer, then, chiseling the groove on the second insulating medium with same techniques and depositing the layer of Ga3Sb8Te1 phase change material in the groove, conducting the chemical-mechanical polishing; at last, forming the up electrode by depositing the up electrode material. The invention reduces the power consumption of the phase change memorizer unit to 10%.

The invention relates to gallium doped zinc oxide target and a preparation method of a transparent conductive film thereof. The target is formed by sintering zinc and gallium oxide powder, wherein the weight content of gallium oxide is 0.5-10%; the purity of the target is no less than 99.9%; and the relative density of the target is no less than 95%, and the maximum is up to 99.5%. The transparent conductive film prepared from the target through the sputtering method has good photoelectric properties; the resistivity can be as low as 1.05*10<-4>Omega cm, the maximum transmissivity is up to 92% in the visible light range (400-800 nm), the average transmissivity is no less than 84%; and the transparent conductive film can be widely used in the fields such as solar cells, light emitting diodes, flat-panel display and liquid crystal display.

The invention discloses a wavelength-adjustable light-emitting diode based on a gallium-doped zinc oxide nanowire array and a manufacturing method thereof. The wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises a p-type conducting substrate, a gallium-doped zinc oxide nanowire array, a bottom electrode and a top electrode, wherein the gallium-doped zinc oxide nanowire array and the bottom electrode are positioned on the p-type conducting substrate; the top electrode is positioned on the gallium-doped zinc oxide nanowire array. The manufacturing method of the wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises the following steps: providing a p-type conducting substrate; growing a gallium-doped zinc oxide nanowire array on the p-type conducting substrate by controlling the gallium-doping amount of the gallium-doped zinc oxide nanowire array; rotationally coating the grown gallium-doped zinc oxide nanowire array with a blocking layer; etching and removing the blocking layer coated on the top of the gallium-doped zinc oxide nanowire array; depositing the top electrode on the top of the gallium-doped zinc oxide nanowire array; removing a part of the gallium-doped zinc oxide nanowire array to expose the p-type conducting substrate, and manufacturing the bottom electrode on the exposed p-type conducting substrate.

The invention relates to a manufacturing method of a gallium doped zinc oxide target material. The gel casting technology is used for manufacturing the gallium doped zinc oxide target material. The gallium doped zinc oxide target material with the compactness being 98% is manufactured through the steps of mixing, pulping, curing drying, green body machining, degreasing, sintering, machining and the like. According to the manufacturing method, the vacuum defoamation technology is omitted, so that the existing gel casting technological process is simplified, and the manufacturing cost is lowered.

The invention discloses a preparation method of a gallium-doped silicon ingot, the gallium-doped silicon ingot and a silicon piece. The preparation method comprises the following steps: injecting a molten metal gallium into pores of a silicon material, curing the molten metal gallium and/or sealing the pores, putting the obtained silicon material with the metal gallium and the rest silicon material into a quartz crucible, and performing melting, recrystallization and annealing cooling so as to obtain gallium-doped silicon ingot. The gallium-doped silicon ingot is prepared by using the preparation method. The silicon piece is prepared from the gallium-doped silicon ingot. By adopting the preparation method, a gallium doping process and effective and precise control on gallium doping amountscan be achieved, the preparation method has the advantages of being convenient in operation, easy in control, high in gallium doping amount precision, and the like, the prepared gallium-doped siliconingot has the advantages of being good in resistance distribution uniformity, long in minority carrier lifetime, and the like, a solar battery prepared from the gallium-doped silicon ingot has high photoelectric efficiency and low light degradation, and great significances can be achieved for wide application of solar batteries.

The invention relates to a preparation method of gallium-doped crystalline silicon with uniformly distributed resistivity. The preparation method comprises the following steps: uniformly laying a layer of gallium-doped silicon material at the bottom of a crucible; arranging a polycrystalline silicon material containing a gallium doping agent above the gallium-doped silicon material; controlling the temperature in the crucible to gradually melt the polycrystalline silicon material and the gallium-doped silicon material from top to bottom, and upwards crystallizing silicon liquid produced during the melting of the partial gallium-doped silicon material, so as to finally generate crystalline silicon ingots. According to the preparation method, the gallium-doped silicon materials are laid at the bottom of the crucible, so that gallium can be continuously dispersed into crystals at the bottom of the crucible in a bottom crystallization process, the bottom doping concentration of the silicon ingots is improved, the bottom resistance of the silicon ingots can be effectively controlled, the distribution range of the resistivity of the silicon ingots in the vertical direction is reduced, and the proportion of the qualified silicon ingots with the resistivity of 0.8-3 omega.cm is increased. Besides, the invention further discloses the gallium-doped crystalline silicon prepared by virtue of the preparation method.

The invention provides a method for studying the optimal sintering process of gallium-doped zinc oxide ceramics by spark plasma sintering. ZnO and Ga ₂ o ₃ Powder according to Ga _0.00075 Zn _0.99925 After the O ratio is weighed, ball milled, dried and sieved, ZnO, Ga ₂ o ₃ Powder; the powder is put into the graphite grinding tool, compacted, the graphite grinding tool is placed in the furnace cavity of the spark plasma sintering furnace, vacuumed, and the pre-pressure is 15MPa; it is raised from room temperature to 600 ° C within 4 minutes, and then Raise the temperature at a rate of 10°C/min. When the maximum peak value appears on the displacement curve, increase the pressure to 60MPa, then increase the temperature at a rate of 10°C/min to 1100°C, keep the temperature for 9 minutes, and reduce the pressure to the minimum after cooling down. Once sintered into porcelain. This process greatly improves the preparation efficiency; it also has the characteristics of one-time sintering into porcelain, low energy consumption, and is convenient for industrial production; it greatly reduces the resistivity of GZO ceramics and improves its electrical properties.

The invention relates to a high-efficiency planar perovskite solar cell. The high-efficiency planar perovskite solar cell comprises a transparent conductive substrate, an electron conduction layer, aperovskite layer, a hole conduction layer and a metal electrode, wherein the electron conduction layer is a gallium-doped titanium dioxide compact layer fabricated by a low-temperature process solution method. The invention also relates to a fabrication method of the high-efficiency planar perovskite solar cell. The gallium-doped titanium dioxide compact layer is obtained by adding gallium nitrateinto the process of fabricating the titanium dioxide layer by hydrolysis of titanium tetrachloride and by low-temperature heat treatment, and the perovskite solar cell is assembled by the gallium-doped titanium dioxide compact layer. In the planar perovskite solar cell, the gallium-doped titanium dioxide compact layer prepared by the low-temperature process solution method is used as the electronconduction layer, collection and conduction of photo-induced electron by the titanium dioxide electron conduction layer are facilitated by gallium doping, so that the planar perovskite solar cell hasthe advantages of high photoelectric conversion efficiency and high battery efficiency and is easy to fabricate.

The invention relates to the field of photovoltaics. The invention provides gallium, hydrogen and nitrogen doped monocrystalline silicon, a preparation method thereof and a solar cell. The hydrogen doping concentration in the gallium, hydrogen and nitrogen doped monocrystalline silicon is 1*10 <5>-1*10<16> atoms/cm<3>, the gallium doping concentration is 1*10 <15>-5*10<17> atoms/cm<3>, and the nitrogen doping concentration is 1*10<12>-1*10<16> atoms/cm<3>; and the resistivity of the gallium, hydrogen and nitrogen doped monocrystalline silicon is 0.1-10 ohm.cm. According to the gallium, hydrogen and nitrogen doped monocrystalline silicon, the preparation method thereof and the solar cell, the minority carrier lifetime in the monocrystalline silicon can be effectively prolonged, the passivation effect of the cell is improved, the mechanical strength of a silicon wafer is improved, and the conversion efficiency of the solar cell is improved.

Disclosed is a method of preparing a solid electrolyte, the method including (a) preparing a solid electrolyte precursor by subjecting a mixed solution composed of a lanthanum precursor, a zirconium precursor, a gallium precursor, a complexing agent, and a pH adjuster to coprecipitation, (b) washing and drying the solid electrolyte precursor, (c) preparing a mixture by mixing the washed and dried solid electrolyte precursor with a lithium source, and (d) calcining the mixture to give a calcined solid electrolyte, which is a gallium (Ga)-doped lithium lanthanum zirconium oxide (LLZO), as represented by Chemical Formula 1. A solid electrolyte having increased ionic conductivity and an improved potential window can be provided using the method of preparing the solid electrolyte.

The invention provides a gallium oxide doped tin oxide ceramic target material and a preparation method thereof. The gallium oxide doped tin oxide ceramic target material comprises the following raw materials in percentage by mass: 2-10% of gallium oxide and 90-98% of tin oxide high-purity nano powder. The preparation method comprises the following steps: weighing and mixing the powder, adding ammonium polyacrylate, polyvinyl alcohol and pure water, carrying out ball milling on the mixed slurry, granulating, drying to obtain mixed powder, sequentially carrying out compression molding by using an oil press and an isostatic press, and preparing the gallium oxide-doped tin oxide ceramic target material at different sintering temperatures by using a degreasing multi-step sintering integrated sintering technology. According to the doped gallium oxide, the sintering performance of the tin oxide ceramic is effectively improved, the density of the tin oxide ceramic target material is remarkably improved, and meanwhile the gallium oxide doped tin oxide target material which is uniform in structure and fine in grain is obtained through effective control over the preparation process.

The invention discloses a manufacturing process of a solar P-type polycrystalline silicon wafer. The manufacturing process comprises the following steps: (1) preparing raw materials; (2) preparing a P-type silicon ingot; (3) cutting and squaring the silicon ingot; and (4) cutting and cleaning the silicon wafer, wherein the used raw materials comprise a primary silicon material with the purity of 6N, a circulating silicon material and a doping agent gallium, the circulating silicon material comprises a circulating silicon plate, a circulating silicon block, a circulating silicon sheet and circulating silicon powder, the circulating silicon material needs to be subjected to impurity removal and purification treatment before being used, the edge of a crucible is filled with the circulating silicon material during ingot casting, the center of the crucible is filled with the primary silicon material doped with gallium, the doping concentration of gallium in the primary silicon material is gradually reduced from the bottom of the crucible to the top of the crucible, the concentration of gallium at the top is zero, the crucible filled with the silicon material is put into a microwave sintering furnace, and the material is discharged out of the furnace after heating, heat preservation and cooling under the protection of argon to obtain the P-type silicon ingot uniformly doped with gallium. According to the method, the circulating silicon material is fully utilized, and the prepared silicon wafer is stable in quality.

The invention relates to a multi-gate device and a method of forming the same. An exemplary device includes a channel layer, a first epitaxial source/drain feature, and a second epitaxial source/drain feature disposed over a substrate. The channel layer is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. A metal gate is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. The metal gate is disposed over and in physical contact with at least two sides of the channel layer. A source/drain contact is disposed over the first epitaxial source/drain feature. A doped crystalline semiconductor layer, such as a gallium doped crystalline germanium layer, is disposed between the first epitaxial source/drain feature and the source/drain contact. The doped crystalline semiconductor layer is disposed over and in physical contact with at least two sides of the first epitaxial source/drain feature. In some embodiments, the doped crystalline semiconductor layer has a contact resistivity of less than about 1 * 10 <-9 > [Omega]-cm < 2 >.

The invention discloses an electroluminescent device with dynamically controllable wavelength and a control method thereof. The electroluminescent device comprises a flexible substrate and a gallium-doped zinc oxide microwire arranged on the substrate, wherein two ends of the gallium-doped zinc oxide microwire are fixed on the flexible substrate and connected with electrodes; a single ZnO: Ga micron wire with excellent optical performance is used as a light emitting source, and band gap reforming is induced by applying external mechanical strain, so that dynamic and continuous regulation and control on the electroluminescent wavelength are realized. The invention provides an effective strategy for developing a light-emitting device with dynamically adjustable wavelength, is simple and convenient to operate, and has a huge application prospect in the fields of wavelength tunable point light sources, photoelectric modulators, strain sensing and the like in the future.

The invention provides a solar cell and a preparation method of gallium and hydrogen doped monocrystalline silicon. The solar cell comprises a semiconductor substrate, a doped layer located on the front surface of the semiconductor substrate, a front surface passivation layer and/or anti-reflection layer located on the upper surface of the doped layer, a front surface electrode located on the upper surface of the front surface passivation layer and/or anti-reflection layer, a back surface passivation layer located on the back surface of the semiconductor substrate and a back surface electrodelocated on the back surface of the back surface passivation layer, wherein the semiconductor substrate comprises gallium and hydrogen-doped monocrystalline silicon, the hydrogen doping concentration in the gallium and hydrogen-doped monocrystalline silicon is 1*10<5> to 1*10<16> atoms/cm<3>, the gallium doping concentration is 1*10<15> to 5*10<17> atoms/cm<3>, and the resistivity of the gallium and hydrogen-doped monocrystalline silicon is 0.1-10 [ohm].cm. According to the solar cell, the minority carrier lifetime in monocrystalline silicon can be effectively prolonged, the passivation effectof the cell is improved, and the conversion efficiency of the solar cell is improved.

The invention provides a gallium doping device, which comprises a gallium cylinder main body made of a silicon material and a connecting piece, wherein the gallium cylinder main body is provided with an accommodating cavity for accommodating gallium powder; and the connecting piece is made of a silicon material and is connected with the gallium cylinder main body so as to facilitate the hoisting. The gallium doping device has the advantages that the structure is simple, machining is easy, and the gallium doping process is convenient when the gallium doping device is used for gallium doping; and the gallium doping device is provided with the connecting piece, so that the gallium doping device is conveniently connected with a single crystal furnace heavy hammer through the connecting device, and the gallium doping device descends under the action of the single crystal furnace heavy hammer to perform gallium doping.

The invention discloses a method for preparing a selective emitter by using a gallium-doped silicon nano slurry. The method comprises the following steps of transferring patterns on the front surface of a diffused crystalline silicon solar cell by using a slurry prepared from gallium-doped silicon nano particles as a doping source and adopting silk-screen printing, and drying to form a gallium-doped silicon nano film; and forming a selective diffusion area with local heavily doped gallium on the front surface of the cell by adopting a laser-assisted diffusion process, and then finally obtaining the solar cell with a selective emitter through subsequent solar cell processes such as cleaning of redundant doping sources and overprinting of metal electrodes. The preparation method of the selective emitter can be completely compatible with an existing solar cell production process, new equipment does not need to be added, the production cost is low, and the preparation method is suitable for industrial production.