32 results about "Gallium doping" patented technology

A near- and mid-infrared plasmon resonance nanomaterial, a preparation method and its application in antibacterial and antifungal aspects belong to the technical field of nanomaterials and applications. It specifically relates to aluminum-doped zinc oxide, tin-doped indium oxide, gallium-doped zinc oxide, indium-doped cadmium oxide, indium-doped zinc oxide, antimony-doped tin oxide, fluorine-doped tin oxide, gallium oxide and other nanoparticles. The invention utilizes the quantum effect, small size effect and special structure of nanomaterials to form near- and mid-infrared plasmon resonance phenomena on the surface of nanoparticles, and utilizes the conversion of plasmon resonance energy of near- and mid-infrared light energy to effectively eliminate organic microorganisms. Under the irradiation of sunlight (or ambient light), the surface of these materials produces plasmon resonance absorption, and the energy generated interacts with the protein on the surface of the bacteria to kill the bacteria. At the same time, this type of nanomaterial has a large specific surface area, which makes it easier to have a large area of ​​contact with the surface of bacteria, and is also conducive to the digestion of bacteria.

A method for manufacturing a palladium coated doped metal oxide conducting electrode including immersing a metal oxide conducting electrode into an aqueous solution having a palladium precursor salt to form the metal oxide conducting electrode having at least one surface coated with palladium precursor. To form a layer of palladium nanoparticles on the metal oxide conducting electrode the palladium precursor on the metal oxide conducting is reduced with a borohydride compound. The palladium nanoparticles on the metal oxide conducting electrode have an average diameter of 8 nm to 22 nm and are present on the surface of the metal oxide conducting electrode at a density from 1.5×10−3 Pd·nm−2 to 3.5×10−3 Pd·nm−2.

The invention provides a Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film as well as a preparation method and an application thereof. The preparation method of the Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film comprises steps as follows: S1: Bi2O3, Fe2O3 and Ga2O3 are mixed, and then a Ga-doped BiFeO3 block is formed through sintering and pressing; and S2: Ga-doped BiFeO3 isdeposited on a substrate, and the Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film is obtained. The Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film can be used for manufacturingof capacitors. According to the thin film, the preparation method and the application, BiFeO3 is doped with Ga, Ga atoms replace Fe atoms, the distortion degree of the oxygen octahedron is increased,one oxygen atom in the c-axis direction gets close to the central Ga atom, another oxygen atom gets far away from the central Ga atom, the oxygen octahedron is transformed into the oxygen tetrahedralcone, thus the length in the c-axis direction is increased, the ultra-tetragonal phase is stabilized, and the BiFeO3 ultra-tetragonal-phase epitaxial thin film is not limited by factors such as the thickness of the thin film, the strain of the substrate, the buffer layer and the like.

The invention discloses a gallium doping device, comprising a flying ring (2), a ring-shaped fixed sleeve (3) and a hollow cone (4), wherein the flying ring (2) is made of high-purity quartz, the hollow cone (4) is made of high-purity monocrystalline silicon, the ring-shaped fixed sleeve (3) is connected with the hollow cone (14), one end of the flying ring (2) is connected with the ring-shaped fixed sleeve (3), the other end of the flying ring (2) is connected with a handle part (1), and the handle part (1) is provided with a groove (11) which is matched with a crystal seed chuck on a crystal seed rod. The invention also discloses a doping method of gallium of Czochralski silicon monocrystalline through the gallium doping device. The invention can effectively avoid the poor influence on crystal growing caused by the splash of silicon melt.

The invention discloses a growth method of gallium-doped Czochralski single crystal silicon, gallium-doped single crystal silicon and its application, and relates to the technical field of single crystal silicon. In this growth method, polysilicon raw materials and gallium dopants are heated to the silicon melt, and silicon crystals are grown by Chester Czochralski single crystal method, and gaseous phosphorus dopants or arsenic dopants are introduced during the growth stage of silicon crystals. as a donor dopant. The inventor creatively introduces a gaseous donor dopant, which can significantly increase the solidification ratio, and can grow larger-quality silicon crystals in the same quality silicon melt, thereby significantly improving the crystal production efficiency. The gallium-doped single crystal silicon prepared by the above method has a narrower resistivity distribution and low preparation cost, and can be applied in solar cells.

The invention relates to a high-efficiency planar perovskite solar cell, the high-efficiency planar perovskite solar cell includes a transparent conductive substrate, an electron conduction layer, a perovskite layer, a hole conduction layer and a metal electrode; the electron conduction The layer is a dense layer of gallium-doped titanium dioxide prepared by a low-temperature process solution method. The present invention also relates to the preparation method of the above-mentioned high-efficiency planar perovskite solar cell, by adding gallium nitrate and low-temperature heat treatment in the process of hydrolyzing titanium tetrachloride to prepare the titanium dioxide dense layer to obtain the gallium-doped titanium dioxide dense layer, and using the gallium Dense layers of doped titania assemble perovskite solar cells. The planar perovskite solar cell of the present invention adopts the gallium-doped titanium dioxide dense layer prepared by the low-temperature process solution method as the electron conduction layer, and promotes the collection and conduction of the photogenerated electrons by the titanium dioxide electron conduction layer through gallium doping, which has The advantages of high photoelectric conversion efficiency, high cell efficiency, and easy preparation.

The invention discloses a manufacturing process of solar P-type polycrystalline silicon wafers. The production process steps include: (1) preparation of raw materials; (2) preparation of P-type silicon ingots; (3) cutting and prescribing of silicon ingots; (4) silicon ingots Cutting and cleaning of slices; the raw materials used include: primary silicon material with a purity of 6N, recycled silicon material, and dopant gallium; the recycled silicon material includes recycled silicon plates, recycled silicon blocks, recycled silicon wafers, and recycled silicon powder. The recycled silicon material needs to be purified before use. The edge of the crucible is filled with recycled silicon material when the ingot is cast, and the center of the crucible is filled with gallium-doped primary silicon material. The doping concentration of gallium in the primary silicon material is from From the bottom of the crucible to the top of the crucible gradually decreases, the concentration of gallium at the top is zero, and then the crucible filled with silicon material is placed in a microwave sintering furnace. P-type silicon ingots. The invention fully utilizes the recycled silicon material, and the quality of the prepared silicon chips is stable.

The present application relates to the field of photovoltaics. The present application provides gallium, hydrogen, and nitrogen-doped single crystal silicon and a preparation method thereof, and a solar cell. The hydrogen doping concentration in the gallium, hydrogen, and nitrogen-doped single crystal silicon is 1×10 5 ~1×10 16 atoms / cm 3 , gallium doping concentration is 1×10 15 ~5×10 17 atoms / cm 3 , with a nitrogen doping concentration of 1×10 12 ~1×10 16 atoms / cm 3 ; The resistivity of the gallium, hydrogen, nitrogen doped single crystal silicon is 0.1~10Ω·cm. The gallium, hydrogen, nitrogen-doped single crystal silicon and its preparation method and solar cell of the present application can effectively improve the minority carrier lifetime in single crystal silicon, help to improve the passivation effect of the battery, improve the mechanical strength of the silicon chip, and improve the solar cell. conversion efficiency.

The present invention is a method for manufacturing an FZ silicon single crystal for a solar cell, including the steps of: pulling a CZ silicon single crystal doped with gallium by a Czochralski method; and float-zone processing a raw material rod, with the raw material rod being the CZ silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the FZ silicon single crystal. As a result, it is possible to provide a method for manufacturing an FZ silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a CZ crystal, and preventing formation of a B-O pair, which causes a problem to the characteristics of a solar cell.