17 results about "Gallium doping" patented technology

The invention discloses a solid electrolyte membrane for constructing a grain boundary bridge based on an APTES coupling agent and a preparation method of the solid electrolyte membrane, and belongs to the technical field of lithium batteries. According to the composite film, a gallium-doped lithium ion conductor is used as an inorganic phase, a polymer is used as an organic phase, APTES is added for ball milling, an APTES siloxane group is hydrolyzed to generate silanol, the silanol and hydroxyl on the surface of inorganic filler LGLZO are subjected to condensation, terminal amino and the polymer form a hydrogen bond, and a grain boundary bridge is successfully constructed. By adding the APTES coupling agent, the organic-inorganic interface compatibility can be enhanced, the growth of lithium dendrites can be inhibited, the interface impedance can be reduced, the interface stability and the lithium ion transmission efficiency can be improved, and the structural integrity and the electrochemical performance of the battery in the cycle process can be guaranteed; and important theoretical guidance and experimental basis are provided for structural design and performance optimization of the composite solid electrolyte membrane.

The invention discloses a surface modification method for a silicon-carbon composite material electrode, which belongs to the technical field of lithium ion battery negative electrode materials, and mainly comprises the following steps: modifying the surface of the silicon-carbon composite material electrode by magnetron sputtering; wherein the modification material comprises a metal material and / or a solid electrolyte material; the metal material is selected from Al, Cu or In; the solid electrolyte material is selected from titanium aluminum lithium phosphate or gallium-doped lithium lanthanum zirconium tantalum oxide. The method solves the problems of poor conductivity, unstable SEI film and volume effect of the silicon-carbon electrode, and after the prepared electrode is assembled into a battery, the performance of the battery is superior to that of an unmodified electrode, the battery is adaptive to a solid-state battery, and the electrode has industrialization potential and application value.

The application belongs to the technical field of display, and particularly relates to an IGZO thin film transistor based on gradient gallium doping and hydrogen plasma treatment and a preparation method thereof. The application adopts ALD technology to construct a three-section linear gradient Ga-doped active layer, the bottom low Ga area ensures efficient carrier transport, the migration rate can reach 58.7 cm 2 Vs, the top high Ga area uses the high electronegativity of Ga-O bond and the wide band gap characteristics to inhibit the back channel defects, the Delta Vth under NBITS test is as low as 2.2 V, and the stability is improved by more than 5 times compared with the undoped device. In-situ hydrogen / oxygen plasma composite treatment is carried out in the ALD chamber, the saturation dangling bond is compensated, the interface state density is controlled to be ≤10 12 cm ‑2 eV ‑1 , and the sub-threshold swing is optimized. Periodic pauses are introduced in the active layer deposition, the film surface roughness is ≤0.5 nm; a two-step method is used for contact hole etching, and the top high Ga layer is ≥5 nm. The comprehensive performance meets the high-end application requirements such as high-resolution display and flexible display, and the application value and market competitiveness are remarkable.

Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

The invention discloses a preparation method of a gallium-doped zinc oxide single crystal material, and belongs to the field of semiconductors. Comprising the following steps: 1) performing standard cleaning on a zinc oxide single crystal, and blow-drying the zinc oxide single crystal with nitrogen to serve as a substrate; 2) depositing a gallium oxide film on the surface of the zinc oxide substrate by adopting a magnetron sputtering method; and 3) putting the deposited substrate into laser irradiation equipment, and performing continuous irradiation through two-dimensional strip-shaped light spot laser, thereby completing the preparation of the gallium-doped zinc oxide single crystal material. Gallium doping of the zinc oxide single crystal is successfully achieved through laser induction, and the conductivity of the zinc oxide single crystal can be effectively adjusted. The method has the advantages of being simple in process, convenient to operate, controllable in doping area and concentration and capable of being completed in one step, and has high industrial application value.

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and / or drain regions in field effect transistors.

A method for producing a substrate for a solar cell formed from single-crystal silicon, comprising the following steps: producing a gallium-doped silicon single-crystal ingot; cutting a silicon substrate from the silicon single-crystal ingot, wherein the silicon substrate has an oxygen concentration of 12 ppm or more; and subjecting the silicon substrate to a low-temperature heat treatment at a temperature of 800°C or more and less than 1200°C, wherein the low-temperature heat treatment includes dopant diffusion treatment using a diffusion mask, wherein the silicon substrate is subjected to a high-temperature heat treatment at a temperature of 1200°C for 10 minutes prior to the low-temperature heat treatment, such that oxide deposition nuclei are dissolved, wherein the high-temperature heat treatment is carried out prior to forming the diffusion mask and in an atmosphere containing phosphorus oxychloride.

The invention relates to the technical field of electro-catalytic catalysts, in particular to a gallium-doped tin oxide-based catalyst and a preparation method and application thereof. According to the gallium-doped tin oxide-based catalyst provided by the invention, Ga < 3 + > is introduced into the tin oxide-based catalyst, so that a stable oxygen-containing species framework can be constructed, the stability of Sn-O bonds in the structure is further enhanced, the irreversible self-reduction phenomenon of tin oxide in a reducing environment is avoided, and the stability of the material is improved; meanwhile, Ga < 3 + > regulates and controls the electronic structure of tin oxide, the adsorption strength of CO2 and reaction intermediates thereof is optimized, and the catalytic activity is improved, so that the selectivity of formic acid is improved.

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and / or drain regions in field effect transistors.

This invention belongs to the field of biomaterials technology, specifically relating to an integrated kidney organ-on-a-chip system and its application in online monitoring of pesticide nephrotoxicity. The integrated kidney organ-on-a-chip system includes a sample introduction device, a renal tubular microfluidic chip, a Raman detection platform, and a Raman spectrometer. The labeled antibody probe in the Raman detection platform includes a SERS substrate, and recognition antibodies and signal molecules bound to the SERS substrate. The SERS substrate is a gallium-doped zinc oxide superlattice nanocube material. This invention uses a gallium-doped zinc oxide superlattice nanocube material as the SERS substrate, integrating semiconductor surface-enhanced Raman detection technology into a kidney organ-on-a-chip, providing an online monitoring system for pesticide nephrotoxicity with advantages such as fast analysis speed, high molecular selectivity, and high detection sensitivity.

This invention discloses a perovskite solar cell based on an all-inorganic oxide charge transport layer and its fabrication method, belonging to the field of solar cell technology. The perovskite solar cell based on an all-inorganic oxide charge transport layer disclosed in this invention includes a transparent conductive substrate, a first charge transport layer, a perovskite light-absorbing layer, a second charge transport layer, and a back electrode, sequentially stacked. The first charge transport layer is a gallium-doped zinc oxide thin film, serving as an electron transport layer; the second charge transport layer is a copper-gallium oxide thin film, serving as a hole transport layer. This invention solves the technical problems of energy level mismatch, poor stability, and complex fabrication processes in existing technologies.

The present disclosure provides a method and system for controlling resistivity based on gallium content in a gallium-doped single crystal, and a device. The method includes: an initial gallium doping reference value is set, resistivity measurement values are obtained in real time; a first over-limit command and a second over-limit command are sent when one of the resistivity measurement values satisfies a preset condition; a target prediction value is calculated based on the resistivity measurement values; online analysis is performed to generate a reference value increment and a fluctuation adjustment instruction; and a gallium doping amount reference value is modified in real time based on the initial gallium doping reference value, the reference value increment, the first over-limit command, the second over-limit command, and the fluctuation adjustment instruction, and a resistivity fluctuation is controlled based on a modified gallium doping amount reference value.

This invention discloses an ultra-high nickel cathode material precursor, its preparation method, cathode material, and battery, belonging to the field of battery technology. The preparation of the ultra-high nickel cathode material precursor includes the following steps: adding a mixed metal sulfate solution, a sodium gallate solution, a complexing agent, and a precipitant to a base solution for co-precipitation reaction until the particle size of the resulting particles reaches a preset value; the complexing agent is an oxalic acid solution; and the precipitant is a sodium hydroxide solution. This application achieves gallium doping during the precursor preparation reaction stage by co-precipitating gallium with other raw materials in the reaction system using a sodium gallate solution, thus avoiding Ga doping. 3+ The first precipitation allows for molecular-level mixing of metal elements, resulting in a hydroxide precursor with a more uniform elemental distribution. This is beneficial for improving the stability of the layered structure of the high-nickel precursor material, expanding the interlayer spacing, and thus enhancing the material's cycle stability.

The application discloses a method for preparing gallium-doped hollow ZSM-5 molecular sieves by microwave and application thereof, and relates to the technical field of molecular sieve catalyst preparation. A precursor is prepared by mixing a silicon source, a template agent and deionized water, stirring and transferring into a digestion tank, and then the precursor is subjected to microwave hydrothermal treatment and is placed in a muffle furnace for calcination to remove the template agent, so as to obtain a pure silicon molecular sieve; the pure silicon molecular sieve is taken, an aluminum source, a template agent and deionized water are added, ultrasonic treatment is performed, and then the mixture is transferred into the digestion tank, and then the mixture is subjected to microwave hydrothermal treatment and dissolution-recrystallization, so as to obtain a product which is placed in the muffle furnace for calcination to remove the template agent, so as to obtain a hollow ZSM-5 molecular sieve; the hollow ZSM-5 molecular sieve is taken, gallium nitrate and deionized water are added, ultrasonic treatment is performed, and then the mixture is transferred into the digestion tank, and then gallium doping is performed under microwave irradiation; and the dried product is placed in a tube furnace, and is kept at 200-300 DEG C under argon atmosphere, so as to obtain the gallium-doped hollow ZSM-5 molecular sieve. The microwave hydrothermal treatment and dissolution-recrystallization process are combined, so that the preparation time of the hollow ZSM-5 molecular sieve is effectively shortened, and the energy consumption is reduced.

Doping a liner of a trench isolation structure with zinc and / or gallium reduces dark current from a photodiode. For example, the zinc and / or gallium may be deposited on a temporary oxide layer and driven into a high-k layer surrounding a deep trench isolation structure and an interface between the high-k layer and surrounding silicon. In another example, the zinc and / or gallium may be deposited on an oxide layer between the high-k layer and surrounding silicon. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.

The application provides a gallium atom iron site doped lithium manganese iron phosphate positive electrode material and a preparation method thereof, and belongs to the field of electrochemical energy storage. The specific process is as follows: gallium nitrate is added into a mixed solution of ethanol and glycerol, and then transferred into a hydrothermal reaction kettle for hydrothermal treatment to obtain a gallium atom ligand as a gallium source. Lithium carbonate is added into an 85% aqueous phosphoric acid solution for reaction, and then a manganese source, a carbon source, iron phosphate and the gallium source are added into the reaction solution one by one to form a mixed slurry. The mixed slurry is subjected to sand milling treatment, and then spray drying. The dried powder is subjected to fluidized sintering under the protection of an inert atmosphere, and finally a gallium atom iron site doped lithium manganese iron phosphate material is obtained. The gallium atom ligand as the gallium source makes the surface morphology of the obtained gallium doped lithium manganese iron phosphate material smoother, and the specific surface area is significantly reduced. The gallium doped lithium manganese iron phosphate material applied to a lithium ion battery positive electrode material exhibits excellent electrochemical performance.

The invention discloses an anti-radiation ultrathin p-type crystalline silicon cell and a preparation method thereof, and belongs to the technical field of photovoltaic device manufacturing. The cell comprises a gallium-doped p-type silicon substrate with the thickness of 60-80 microns, and a functional layer and an electrode which are sequentially arranged on the front and back surfaces of the gallium-doped p-type silicon substrate. The back surface of the cell is provided with a composite back mirror structure composed of an ultrathin tunneling oxide layer, a carrier selective transmission layer and a broadband gap medium light scattering layer so as to synergistically improve long-wave light absorption and surface passivation. The front surface of the cell is provided with a stress release groove which penetrates through the passivation layer and extends into the silicon body, a selective heavily-doped contact region is formed in the stress release groove, and the main gate electrode is filled in the stress release groove to reduce contact resistance and release mechanical stress. The preparation method adopts a full-low-temperature process, and is realized through key steps of laser-induced interface texturing, laser grooving and gallium doping, co-curing of front and back electrodes and the like. According to the invention, the key problem of serious performance degradation of the ultrathin battery in mechanical vulnerability, optical loss and irradiation environments is synchronously solved.